Page 1
www.DataSheet4U.com
v01.0107
HMC590LP5 / 590LP5E
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
5
AMPLIFIERS - SMT
Typical Appli cations
The HMC590LP5 / HMC590LP5E is ideal for use as a
power ampli er for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Test Equipment & Sensors
• Military End-Use
• Space
Functional Diagram
Features
Saturated Output Power: +31.5 dBm @ 23% PAE
Output IP3: +40 dBm
Gain: 21 dB
DC Supply: +7.0 V @ 820 mA
50 Ohm Matched Input/Output
QFN Leadless SMT Packages, 25 mm
2
General Description
The HMC590LP5 & HMC590LP5E are high dynamic
range GaAs PHEMT MMIC 1 Watt Power Ampli ers
which operate fr om 6 to 9.5 GHz. The ampli er provides
21 dB of gain, +31 dBm of saturated power, and 23%
PAE from a +7.0V supply. This 50 Ohm matched
ampli er does not require any external components
and the RF I/Os are DC blocked for robust operation.
For applications which require optimum OIP3, Idd
should be set for 520 mA, to yield +40 dBm OIP3. For
applications which require optimum output P1dB, Idd
should be set for 820 mA, to yield +30 dBm Output
P1dB.
5 - 590
Electrical Specifications, T
Parameter Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 6 - 8 6 - 9.5 GHz
Gain 18 21 18 21 dB
Gain Variation Over Temperature 0.05 0.05 dB/ °C
Input Return Loss 15 12 dB
Output Return Loss 11 10 dB
Output Power for 1 dB
Compression (P1dB)
Saturated Output Power (Psat) 30.5 31 dBm
Output Third Order Intercept (IP3)
Supply Current (Idd) 820 820 mA
[1] Adjust Vgg between -2 to 0V to achieve Idd= 820 mA typical.
[2] Measurement taken at 7V @ 520mA, Pin/ Tone = -15 dBm
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250 -3373
[2]
= +25° C, Vdd = +7V, Idd = 820 mA
A
27 30 27.5 30.5 dBm
40 40 dBm
Order On-line at www.hittite.com
[1]
Page 2
www.DataSheet4U.com
v01.0107
HMC590LP5 / 590LP5E
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Broadband Gain & Return Loss
30
25
20
15
10
5
0
-5
RESPONSE (dB)
-10
-15
-20
-25
456789101112
FREQUENCY (GHz)
S21
S11
S22
Gain vs. Temperature
28
26
24
22
20
18
16
GAIN (dB)
14
12
10
8
6 6.5 7 7.5 8 8.5 9 9.5 10
FREQUENCY (GHz)
+25C
+85C
-40C
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
0
-5
-10
-15
-20
-25
RETURN LOSS (dB)
-30
-35
456789101112
FREQUENCY (GHz)
+25C
+85C
-40C
0
-5
-10
-15
RETURN LOSS (dB)
-20
-25
456789101112
FREQUENCY (GHz)
+25C
+85C
-40C
5
AMPLIFIERS - SMT
P1dB vs. Temperature Psat vs. Temperature
35
34
33
32
31
30
29
P1dB (dBm)
28
27
26
25
6 6.5 7 7.5 8 8.5 9 9.5 10
FREQUENCY (GHz)
+25C
+85C
-40C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250 -3373
Order On-line at www.hittite.com
35
34
33
32
31
30
29
Psat (dBm)
28
27
26
25
6 6.5 7 7.5 8 8.5 9 9.5 10
FREQUENCY (GHz)
+25C
+85C
-40C
5 - 591
Page 3
www.DataSheet4U.com
v01.0107
HMC590LP5 / 590LP5E
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
5
AMPLIFIERS - SMT
35
34
33
32
31
30
29
P1dB (dBm)
28
27
26
25
6 6.5 7 7.5 8 8.5 9 9.5 10
FREQUENCY (GHz)
520mA
620mA
720mA
820mA
Output IP3 vs. Temperature
7V @ 520 mA, Pin/Tone = -15 dBm
46
44
42
40
38
36
34
OIP3 (dBm)
32
30
28
26
6 6.5 7 7.5 8 8.5 9 9.5 10
FREQUENCY (GHz)
+25C
+85C
-40C
Psat vs. CurrentP1dB vs. Current
35
34
33
32
31
30
29
Psat (dBm)
28
27
26
25
6 6.5 7 7.5 8 8.5 9 9.5 10
FREQUENCY (GHz)
520mA
620mA
720mA
820mA
Power Compression @ 8 GHz,
7V @ 820 mA
35
30
25
20
15
10
Pout(dBm), GAIN (dB), PAE(%)
5
0
-14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14
Pout
Gain
PAE
INPUT POWER (dBm)
5 - 592
Output IM3, 7V @ 520 mA Output IM3, 7V @ 820 mA
80
70
60
50
40
IM3 (dBc)
30
20
10
0
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8
6 GHz
7 GHz
8 GHz
9 GHz
10 GHz
Pin/Tone (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250 -3373
Order On-line at www.hittite.com
80
70
60
50
40
IM3 (dBc)
30
20
10
0
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8
Pin/Tone (dBm)
6 GHz
7 GHz
8 GHz
9 GHz
10 GHz
Page 4
www.DataSheet4U.com
v01.0107
HMC590LP5 / 590LP5E
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Gain & Power vs. Supply Current @ 8 GHz Gain & Power vs. Supply Voltage @ 8 GHz
36
34
32
30
28
26
24
22
20
18
GAIN (dB), P1dB (dBm), Psat(dBm)
16
940 1140 1340
Idd SUPPLY CURRENT (mA)
Gain
P1dB
Psat
34
32
30
28
26
24
22
20
GAIN (dB), P1dB (dBm), Psat(dBm)
18
6.5 7 7.5
Vdd SUPPLY VOLTAGE (Vdc)
Gain
P1dB
Psat
Reverse Isolation
vs. Temperature, 7V @ 820 mA
0
-10
-20
-30
-40
-50
ISOLATION (dB)
-60
-70
-80
6 6.5 7 7.5 8 8.5 9 9.5 10
FREQUENCY (GHz)
+25C
+85C
-40C
Power Dissipation
6
5.75
5.5
5.25
5
4.75
4.5
4.25
4
3.75
POWER DISSIPATION (W)
3.5
3.25
3
-14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14
6 GHz
7 GHz
8 GHz
9 GHz
10 GHz
INPUT POWER (dBm)
5
AMPLIFIERS - SMT
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +8 Vdc
Gate Bias Voltage (Vgg) -2.0 to 0 Vdc
RF Input Power (RFin)(Vdd = +7.0 Vdc) +12 dBm
Channel Temperature 175 °C
Continuous Pdiss (T= 75 °C)
(derate 59.8 mW/°C above 75 °C)
Thermal Resistance
(channel to package bottom)
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250 -3373
5.98 W
16.72 °C/ W
Order On-line at www.hittite.com
Typical Supply Current vs. Vdd
Vdd (V) Idd (mA)
+6.5 824
+7.0 820
+7.5 815
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 820 mA at +7.0V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
5 - 593
Page 5
www.DataSheet4U.com
v01.0107
HMC590LP5 / 590LP5E
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
5
AMPLIFIERS - SMT
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON -CUM ULATIVE
4. PAD BURR LENGTH S HALL BE 0.15mm MA XIMUM.
PAD BURR HEIGH T SHALL BE 0.05mm MA XIMUM .
5. PACKAGE WARP SH ALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST B E
SOLDERED TO PCB RF GROU ND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Package Information
Part Number Package Body Material Lead Finish MSL Rating Package Marking
HMC590LP5 Low Stress Injection Molded Plastic Sn/Pb Solder
HMC590LP5E RoHS- compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] Max peak re ow temperature of 235 °C
[2] Max peak re ow temperature of 260 °C
[3] 4-Digit lot number XXXX
MSL1
MSL1
[1]
[2]
[3]
H590
XXXX
H590
XXXX
5 - 594
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250 -3373
Order On-line at www.hittite.com
Page 6
www.DataSheet4U.com
v01.0107
HMC590LP5 / 590LP5E
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Pin Descriptions
Pin Number Function Description Interface Schematic
1, 2, 6 - 19,
23, 24, 26,
27, 29, 31
3, 5, 20, 22 GND
4RFIN
21 RFOU T
25, 28, 30 Vdd 1-3
32 Vgg
N/C Not connected.
These pins and package bottom must
be connected to RF/DC ground.
This pad is AC coupled and
matched to 50 Ohms.
This pad is AC coupled and
matched to 50 Ohms.
Power Supply Voltage for the ampli er. External bypass
capacitors of 100 pF and 2.2 μF are required.
Gate control for ampli er. Adjust to achieve Idd of 820 mA.
Please follow “MMIC Ampli er Biasing Procedure”
Application Note. External bypass capacitors of 100 pF and
2.2 μF are required.
5
AMPLIFIERS - SMT
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250 -3373
Order On-line at www.hittite.com
5 - 595
Page 7
www.DataSheet4U.com
v01.0107
HMC590LP5 / 590LP5E
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
5
Application Circuit
Component Value
C1 - C4 100pF
C5 - C8 2.2μF
AMPLIFIERS - SMT
5 - 596
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250 -3373
Order On-line at www.hittite.com
Page 8
www.DataSheet4U.com
v01.0107
HMC590LP5 / 590LP5E
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Evaluation PCB
5
AMPLIFIERS - SMT
List of Materials for Evaluation PCB 115927
Item Description
J1 - J2 PCB Mount SMA Connector
J3 DC Pin
C1 - C4 100 pF Capacitor, 0402 Pkg
C5 - C8 2.2 μF Capacitor, 1206 Pkg
U1 HMC590LP5 / HMC590LP5E
[2]
PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
109001 Evaluation PCB
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250 -3373
Order On-line at www.hittite.com
[1]
The circuit board used in the nal application
should use RF circuit design techniques. Signal
lines should have 50 ohm impedance while the
package ground leads and package bottom should
be connected directly to the ground plane similar to
that shown. A suf cient number of via holes should
be used to connect the top and bottom ground
planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit
board shown is available from Hittite upon request.
5 - 597
Loading...