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v01.0107
HMC475ST89 / 475ST89E
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.5 GHz
5
AMPLIFIERS - SMT
Typical Appli cations
The HMC475ST89 / HMC475ST89E is an ideal RF/IF
gain block & LO or PA driver:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
Features
P1dB Output Power: +22 dBm
Gain: 21.5 dB
Output IP3: +35 dBm
Cascadable 50 Ohm I/Os
Single Supply: +8V to +12V
Industry Standard SOT89 Package
• IF and RF Applications
Functional Diagram General Description
The HMC475ST89(E) is a InGaP Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC SMT
ampli er covering DC to 4.5 GHz. Packaged in an
industry standard SOT89, the ampli er can be used
as a cascadable 50 Ohm RF/IF gain stage as well as
a LO or PA driver with up to +25 dBm output power.
The HMC475ST89(E) offers 21.5 dB of gain and +35
dBm output IP3 at 850 MHz while requiring only 110
mA from a single positive supply. The Darlington
topology results in reduced sensitivity to normal
process variations and excellent gain stability over
temperature while requiring a minimal number of
external bias components.
5 - 432
Electrical Specifications, Vs= 8.0 V, Rbias= 9.1 Ohm, T
Parameter Min. Typ. Max. Units
DC - 1.0 GHz
Gain
Gain Variation Over Temperature DC - 4.5 GHz 0.008 0.012 dB/ °C
Input Return Loss
Output Return Loss
Reverse Isolation DC - 4.5 GHz 25 dB
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure
Supply Current (Icq) 110 135 mA
Note: Data taken with broadband bias tee on device output.
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 4.5 GHz
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.5 GHz
DC - 1.0 GHz
1.0 - 4.5 GHz
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 4.5 GHz
DC - 2.5 GHz
2.5 - 4.5 GHz
DC - 3.0 GHz
3.0 - 4.5 GHz
= +25° C
A
19.5
17.5
14.5
11.5
9
19.0
18.0
17.5
13.0
11.0
21.5
19.5
16.5
13.5
12
11
14
14
13
10
22.0
21.0
19.5
16.0
14.0
35
30
3.5
3.8
dBm
dBm
dBm
dBm
dBm
dBm
dBm
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250 -3373
Order On-line at www.hittite.com
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
v01.0107
HMC475ST89 / 475ST89E
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.5 GHz
Broadband Gain & Return Loss Gain vs. Temperature
25
20
15
10
5
0
-5
-10
-15
RESPONSE (dB)
-20
-25
-30
-35
-40
0123456
S21
S11
S22
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
-5
-10
-15
-20
-25
INPUT RETURN LOSS (dB)
-30
-35
012345
FREQUENCY (GHz)
+25C
+85C
-40C
26
24
22
20
18
16
14
12
GAIN (dB)
10
8
6
4
2
0
012345
+25C
+85C
-40C
FREQUENCY (GHz)
Output Return Loss vs. Temperature
0
-5
-10
-15
-20
OUTPUT RETURN LOSS (dB)
-25
012345
FREQUENCY (GHz)
+25C
+85C
-40C
5
AMPLIFIERS - SMT
Reverse Isolation vs. Temperature
0
-5
-10
-15
-20
-25
-30
REVERSE ISOLATION (dB)
-35
-40
012345
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250 -3373
+25C
+85C
-40C
Order On-line at www.hittite.com
Noise Figure vs. Temperature
10
9
8
7
6
5
4
3
NOISE FIGURE (dB)
2
1
0
012345
FREQUENCY (GHz)
+25C
+85C
-40C
5 - 433
v01.0107
HMC475ST89 / 475ST89E
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.5 GHz
5
AMPLIFIERS - SMT
P1dB vs. Temperature Psat vs. Temperature
26
24
22
20
18
16
14
12
10
P1dB (dBm)
8
6
4
2
0
012345
FREQUENCY (GHz)
+25C
+85C
-40C
28
26
24
22
20
18
16
14
12
Psat (dBm)
10
8
6
4
2
0
012345
FREQUENCY (GHz)
Gain, Power & OIP3 vs. Supply Voltage
Output IP3 vs. Temperature
45
40
35
30
OIP3 (dBm)
25
20
15
012345
FREQUENCY (GHz)
+25C
+85C
-40C
for Constant Icc= 110 mA @ 850 MHz
42
39
36
33
30
27
24
21
18
15
12
9
6
3
0
8 9 10 11 12
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
Vs (Vdc)
+25C
+85C
-40C
Gain
P1dB
Psat
OIP3
5 - 434
Vcc vs. Icc Over Temperature for
Fixed Vs= 8V, RBIAS= 9.1 Ohms
140
135
130
125
120
115
110
105
Icc (mA)
100
95
90
85
80
75
6.9 7 7.1 7.2 7.3 7.4 7.5
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250 -3373
+85C
+25C
-40C
Vcc (Vdc)
Order On-line at www.hittite.com
v01.0107
HMC475ST89 / 475ST89E
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.5 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc) +8.0 Vdc
RF Input Power (RFin)(Vcc = +7.2 Vdc) +17 dBm
Junction Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 16.86 mW/°C above 85 °C)
Thermal Resistance
(junction to lead)
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
1.09 W
59.3 °C/W
Outline Drawing
5
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
AMPLIFIERS - SMT
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS].
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number Package Body Material Lead Finish MSL Rating Package Marking
HMC475ST89 Low Stress Injection Molded Plastic Sn/Pb Solder
HMC475ST89E RoHS- compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] Max peak re ow temperature of 235 °C
[2] Max peak re ow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250 -3373
Order On-line at www.hittite.com
MSL1
MSL1
[1]
[2]
[3]
H475
XXXX
H475
XXXX
5 - 435
v01.0107
HMC475ST89 / 475ST89E
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.5 GHz
5
AMPLIFIERS - SMT
Pin Descriptions
Pin Number Function Description Interface Schematic
1IN
3 OUT RF output and DC Bias (Vcc) for the output stage.
2, 4 GND
An off chip DC blocking capacitor is required.
These pins and package bottom must be connected to
This pin is DC coupled.
RF/DC ground.
Application Circuit
5 - 436
Recommended Bias Resistor Values for
Icc= 110 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs) 8V 9V 10V 12V
R
BIAS VALUE 9.1 Ω 18 Ω 27 Ω 43 Ω
BIAS POWER RATING ¼ W ½ W ½ W 1 W
R
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. RBIAS provides DC bias stability over temperature.
Recommended Component Values for Key Application Frequencies
Component
L1 270 nH 56 nH 18 nH 18 nH 15 nH 8.2 nH 6.8 nH
C1, C2 0.01 μF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250 -3373
50 900 1900 2200 2400 3500 4500
Order On-line at www.hittite.com
Frequency (MHz)
v01.0107
HMC475ST89 / 475ST89E
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.5 GHz
Evaluation PCB
5
AMPLIFIERS - SMT
List of Materials for Evaluation PCB 116092
Item Description
J1 - J2 PCB Mount SMA Connector
J3 - J4 DC Pin
C1, C2 Capacitor, 0402 Pkg.
C3 100 pF Capacitor, 0402 Pkg.
C4 1000 pF Capacitor, 0603 Pkg.
C5 2.2 μF Capacitor, Tantalum
R1 Resistor, 120 6 Pkg.
L1 Inductor, 0603 Pkg.
U1 HMC475ST89 / HMC475ST89E
[2]
PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
107368 Evaluation PCB
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250 -3373
Order On-line at www.hittite.com
[1]
The circuit board used in the nal application
should use RF circuit design techniques. Signal
lines should have 50 ohm impedance while the
package ground leads and package bottom should
be connected directly to the ground plane similar to
that shown. A suf cient number of via holes should
be used to connect the top and bottom ground
planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit
board shown is available from Hittite upon request.
5 - 437
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