NPN SILICON RF POWER TRANSISTOR
The ASI FMB075 is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
VCB
VCE
P
DISS
TJ
T
STG
140 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
10 A
60 V
35 V
FMB075
PACKAGE STYLE .500 4L FLG
.112x45°
L
D
F
G
.125 / 3.18
.125 / 3.18
Ø.125 NOM.
K
J
I
MAXIMUM
inches / mm
.230 / 5.84
.255 / 6.48
.7.30 / 18.54
.980 / 24.89
.110 / 2.79
.175 / 4.45
.280 / 7.11
1.050 / 26.67
DIM
A
FULL R
C
B
E
H
MINIMUM
inches / mm
A
B
C
D
E
F
G
H
I
J
K
L
.220 / 5.59
.245 / 6.22
.720 / 18.28
.970 / 24.64
.495 / 12.57 .505 / 12.83
.003 / 0.08 .007 / 0.18
.090 / 2.29
.150 / 3.81
.980 / 24.89
θθJC
CHARACTERISTICS T
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 50 mA 35 V
CEO
BV
IC = 50 mA RBE = 10 Ω 60 V
CER
BV
IE = 10 mA 4.0 V
EBO
I
VE = 28 V 5 mA
CES
hFE VCE = 5.0 V IC = 1.0 A 10 100 ---
Cob VCB = 28 V f = 1.0 MHz
PG
ηηC
1.5 OC/W
= 25 OC
C
VCC = 28 V P
= 75 W f = 108 MHz
OUT
75 pF
10
65
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.