2N 2N3442-D Service Manual

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2N 2N3442-D Service Manual

2N3442

High−Power Industrial

Transistors

NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers,

series and shunt regulators and power switches.

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Features

Collector −Emitter Sustaining Voltage − VCEO(sus) = 140 Vdc (Min)

Excellent Second Breakdown Capability

Pb−Free Package is Available*

MAXIMUM RATINGS (Note 1)

Rating

Symbol

Value

Unit

 

 

 

 

Collector−Emitter Voltage

VCEO

140

Vdc

Collector−Base Voltage

VCB

160

Vdc

Emitter−Base Voltage

VEB

7.0

Vdc

Collector Current

− Continuous

IC

10

Adc

 

− Peak

 

15

 

 

 

 

 

 

Base Current

− Continuous

IB

7.0

Adc

 

− Peak

 

 

 

 

 

 

Total Device Dissipation @ TC = 25_C

PD

117

W

Derate above 25_C (Note 2)

 

0.67

W/_C

Operating and Storage Junction

TJ, Tstg

−65 to +200

_C

Temperature Range

 

 

 

 

 

 

 

 

 

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

Unit

 

 

 

 

Thermal Resistance, Junction−to−Case

RqJC

1.17

_C/W

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1.Indicates JEDEC Registered Data.

2.This data guaranteed in addition to JEDEC registered data.

10 AMPERE

POWER TRANSISTOR

NPN SILICON

140 VOLTS − 117 WATTS

TO−204AA (TO−3)

CASE 1−07

STYLE 1

MARKING DIAGRAM

2N3442G AYWW MEX

2N3442

= Device Code

G

= Pb−Free Package

A

= Assembly Location

Y

= Year

WW

= Work Week

MEX

= Country of Origin

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ORDERING INFORMATION

Device

Package

Shipping

 

 

 

2N3442

TO−204

100 Units / Tray

 

 

 

2N3442G

TO−204

100 Units / Tray

 

(Pb−Free)

 

 

 

 

Semiconductor Components Industries, LLC, 2006

1

Publication Order Number:

February, 2006 − Rev. 11

 

2N3442/D

2N3442

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

Collector−Emitter Sustaining Voltage

VCEO(sus)

140

Vdc

(IC = 200 mAdc, IB = 0)

 

 

 

 

Collector Cutoff Current

ICEO

200

mAdc

(VCE = 140 Vdc, IB = 0)

 

 

 

 

Collector Cutoff Current

ICEX

 

 

mAdc

(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)

 

5.0

 

(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)

 

30

 

Emitter Cutoff Current

IEBO

5.0

mAdc

(VBE = 7.0 Vdc, IC = 0)

 

 

 

 

ON CHARACTERISTICS (Note 3)

 

 

 

 

 

 

 

 

 

DC Current Gain

hFE

 

 

(IC = 3.0 Adc, VCE = 4.0 Vdc)

 

20

70

 

(IC = 10 Adc, VCE = 4.0 Vdc)

 

7.5

 

Collector−Emitter Saturation Voltage

VCE(sat)

5.0

Vdc

(IC = 10 Adc, IB = 2.0 Adc)

 

 

 

 

Base−Emitter On Voltage

VBE(on)

5.7

Vdc

(IC = 10 Adc, VCE = 4.0 Vdc)

 

 

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

Current−Gain − Bandwidth Product (Note 4)

fT

80

kHz

(IC = 2.0 Adc, VCE = 4.0 Vdc, ftest = 40 kHz)

 

 

 

 

Small−Signal Current Gain

hfe

12

72

(IC = 2.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)

 

 

 

 

3.Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.

4.fT = |hfe| ftest

(NORMALIZED)

1.0

 

 

 

 

 

 

 

 

0.8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DISSIPATION

0.6

 

 

 

 

 

 

 

 

0.4

 

 

 

 

 

 

 

 

,POWER

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

 

 

D(MAX)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

/P

0

 

 

 

 

 

 

 

 

D

 

 

 

 

 

 

 

 

P

0

25

50

75

100

125

150

175

200

 

 

 

 

TC, CASE TEMPERATURE (°C)

 

 

Figure 1. Power Derating

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