Zetex Semiconductor MPSA77P Datasheet
PNP SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 1 JUNE 94
FEATURES
* 60 Volt V
* Gain of 10k at IC=100mA
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Power Dissipation at T
Operating and Storage Temperature Range T
CEO
=25°C P
amb
CBO
CEO
EBO
C
tot
j:Tstg
MPSA77P
C
B
E
E-Line
TO92 Compatible
-60 V
-60 V
-10 V
-500 mA
625 mW
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
On Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CES
I
EBO
V
CE(sat)
V
BE(on)
h
FE
*Measured under pulsed conditions. Pulse width=300
-60 V
-60 V
-10 V
-100 nA VCB=-50V, IE=0
-500 nA VCE=-50V
-100 nA VEB=-10V, IC=0
-1.5 V IC=-100mA, IB=-0.1mA*
-2 V IC=-100mA, VCE=-5V*
10k
10k
µs. Duty cycle ≤2%
=-100µA, I
I
C
=-100µA, I
I
C
=-10µA, I
I
E
IC=-10mA, VCE=-5V*
=-100mA, VCE=5V*
I
C
3-83
=0
E
=0*
B
=0
C
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