Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
MPSH10
NPN 1 GHz general purpose
switching transistor
Product specification
Supersedes data of September 1995
1998 Aug 27
File under Discrete Semiconductors, SC14
Page 2
Philips Semiconductors Product specification
NPN 1 GHz general purpose switching transistor MPSH10
FEA TURES
• Low cost
• High power gain.
PINNING
PIN DESCRIPTION
1 collector
age
1
2
3
2 emitter
DESCRIPTION
3 base
MSB033
Silicon NPN general purpose
transistor in a SOT54 (TO-92)
package. PNP complement is the
MPSH81.
Marking code: PSH10.
Fig.1 SOT54.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
P
tot
T
j
h
FE
C
re
C
rb
f
T
r
bCc
collector-base voltage open emitter − 30 V
collector-emitter voltage open base − 25 V
emitter-base voltage open collector − 3V
total power dissipation Ts=25°C; note 1 − 1W
junction temperature − 150 °C
DC current gain VCE=10V; IC=4mA 60 −
collector-emitter feedback capacitance VCB=10V; IE= 0; f = 1 MHz − 0.7 pF
collector-base feedback capacitance VCB=10V; IE= 0; f = 1 MHz 0.35 0.65 pF
transition frequency VCE=10V; IC= 4 mA;
f = 100 MHz; T
amb
=25°C
collector-base time constant VCE=10V; IC= 4 mA;
f = 100 MHz; T
amb
=25°C
650 − MHz
− 9ps
Note
is the temperature at the soldering point of the collector lead, 4 mm from the body.
1. T
s
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage open emitter − 30 V
collector-emitter voltage open base − 25 V
emitter-base voltage open collector − 3V
collector current (DC) − 40 mA
total power dissipation Ts=25°C; note 1 − 1W
storage temperature −65 +150 °C
junction temperature − 150 °C
Note
1. Tsis the temperature at the soldering point of the collector lead, 4 mm from the body.
1998 Aug 27 2
Page 3
Philips Semiconductors Product specification
NPN 1 GHz general purpose switching transistor MPSH10
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
R
th j-a
Note
1. Ts is the temperature at the soldering point of the collector lead, 4 mm from the body.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEon
I
CBO
I
EBO
h
FE
C
re
C
rb
f
T
r
bCc
thermal resistance from junction to soldering point note 1 125 K/W
thermal resistance from junction to ambient 250 K/W
collector-base breakdown voltage open emitter; IC= 100 µA; IE=0 30 − V
collector-emitter breakdown voltage open base; IC= 1 mA; IB=0 25 − V
emitter-base breakdown voltage open collector; IE=10µA; IC=0 3 − V
collector-emitter saturation voltage IC= 4 mA; IB= 0.4 mA − 0.5 V
base-emitter ON voltage VCE= 10 V; IC=4mA − 0.95 V
collector-base cut-off current VCB= 25 V; IE=0 − 100 nA
emitter-base cut-off current VCB= 25 V; IC=0 − 100 nA
DC current gain VCE= 10 V; IC=4mA 60 −
collector-emitter feedback capacitance VCB= 10 V; IE=ie= 0; f = 1 MHz − 0.7 pF
collector-base feedback capacitance VCB= 10 V; IC=ic= 0; f = 1 MHz 0.35 0.65 pF
transition frequency VCE= 10 V; IC= 4 mA;
f = 100 MHz; T
amb
=25°C
collector-base time constant VCB= 10 V; IC= 4 mA;
f = 100 MHz; T
amb
=25°C
650 − MHz
− 9ps
1998 Aug 27 3
Page 4
Philips Semiconductors Product specification
NPN 1 GHz general purpose switching transistor MPSH10
100
handbook, halfpage
Y
11
(mS)
80
60
40
20
0
2
10
VCB= 10V; IC= 4 mA.
g
11
−b
11
MRA154
f (MHz)
Fig.2 Common base input admittance (Y11) as a
function of frequency.
−10
handbook, halfpage
b
11
(mS)
−20
1000 MHz
−30
−40
−50
3
10
−60
0 100
VCB= 10 V; IC= 4 mA.
700
400
20 40 60 80
200 100
MRA156
g11 (mS)
Fig.3 Common base input admittance (Y11).
f (MHz)
MRA155
3
10
70
handbook, halfpage
Y
21
(mS)
50
30
10
−10
−30
2
10
VCB= 10 V; IC= 4 mA.
b
21
−g
21
Fig.4 Common base forward transfer admittance
(Y21) as a function of frequency.
1998 Aug 27 4
60
handbook, halfpage
b
21
(mS)
100
50
40
30
20
10
−70 30
VCB= 10 V; IC= 4 mA.
200
−50 −30 −10 10
400
600
700
MRA157
1000 MHz
g21 (mS)
Fig.5 Common base forward transfer admittance
(Y21).
Page 5
Philips Semiconductors Product specification
NPN 1 GHz general purpose switching transistor MPSH10
handbook, halfpage
5
Y
12
(mS)
4
3
2
1
0
2
10
VCB= 10 V; IC= 4 mA.
−b
12
g
12
MRA150
f (MHz)
Fig.6 Common base reverse transfer admittance
(Y12) as a function of frequency.
handbook, halfpage
3
10
0
b
12
(mS)
−1
−2
−3
−4
−5
VCB= 10 V; IC= 4 mA.
−1.2 −0.4 0.4 1.2
−22
100
200
400
700
1000 MHz
MRA152
g12 (mS)
Fig.7 Common base reverse transfer admittance
(Y12).
g
22
f (MHz)
MRA151
10
10
handbook, halfpage
Y
22
(mS)
8
6
4
2
0
2
10
VCB= 10 V; IC= 4 mA.
b
22
Fig.8 Common base reverse admittance (Y22)as
a function of frequency.
10
handbook, halfpage
b
22
(mS)
8
6
4
2
3
0
010
VCB= 10 V; IC= 4 mA.
1000 MHz
700 MHz
400 MHz
200 MHz
100 MHz
2468
MRA153
g
(mS)
22
Fig.9 Common base reverse admittance (Y22).
1998 Aug 27 5
Page 6
Philips Semiconductors Product specification
NPN 1 GHz general purpose switching transistor MPSH10
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads SOT54
c
E
d
A L
1
D
2
3
b
1
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
A
5.2
mm
5.0
OUTLINE
VERSION
SOT54 TO-92 SC-43
b
0.48
0.40
b
c
D
d
1
0.66
0.45
0.40
4.8
4.4
0.56
IEC JEDEC EIAJ
E
1.7
4.2
1.4
3.6
REFERENCES
e
2.54
e
1.27
1
L
14.5
12.7
L
1
(1)
L
1
2.5
EUROPEAN
PROJECTION
b
e
1
e
ISSUE DATE
97-02-28
1998 Aug 27 6
Page 7
Philips Semiconductors Product specification
NPN 1 GHz general purpose switching transistor MPSH10
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Aug 27 7
Page 8
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© Philips Electronics N.V. 1998 SCA60
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Printed in The Netherlands 125104/00/04/pp8 Date of release: 1998 Aug 27 Document order number: 9397 75004297
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