Zetex (Now Diodes) BCW60A, BCW60AR, BCW60B, BCW60BR, BCW60C Schematic [ru]

SOT23 NPN SILICON PLANAR

R

1

R

2

R

L

50Ω

VCC(+10V)-V

BB

+10V

t

r < 5nsec

Zin

≥

100k

Ω

Oscilloscope

1µsec

t

r

< 5nsec
Mark/Space ratio < 0. 01
Z

s

=50

Ω

SMALL SIGNAL TRANSISTORS

ISSUE 2  AUGUST 1995

PARTMARKING DETAILS

BCW60A  AA BCW60AR  CR
BCW60B  AB BCW60BR  DR
BCW60C  AC BCW60CR  AR
BCW60D  AD BCW60DR  BR

COMPLEMENTARY TYPE

BCW61

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Continuous Collector Current I

Base Current I

Power Dissipation at T

=25°C P

amb

Operating and Storage Temperature Range tj:tstg -55 to +150 °C

FOUR TERMINAL NETWORK DATA (Ic=2mA, VCE=5V, f=1kHz)

h

Group A h

FE

Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.

Group B hFE Group C h

FE

CBO

CEO

EBO

C

B

TOT

BCW60

C

SOT23

32 V

32 V

5V

200 mA

50 mA

330 mW

Group D

FE

E

B

1.6 2.7 4.5 2.5 3.6 6.0 3.2 4.5 8.5 4.5 7.5 12

h

11e

h

12e

h

21e

h

22e

SWITCHING CIRCUIT

1.5 2 2 3 10

200 260 330 520

18 30 24 50 30 60 50 100

PAGE NO

k

µS

Ω

-4

BCW60

R

1

R

2

R

L

50Ω

VCC(+10V)-V

BB

+10V

t

r < 5nsec

Zin

≥

100k

Ω

Oscilloscope

1µsec

t

r

< 5nsec
Mark/Space ratio < 0. 01
Z

s

=50

Ω

ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Emitter
Breakdown Voltage

Emitter-Base Breakdown
Voltage

Collector-Emitter
Cut-off Current

Emitter-Base Cut-Off Current I

Collector-Emitter Saturation
Voltage

Base-Emitter
Saturation Voltage

Base - Emitter Voltage V

Static BCW60A
Forward
Current
Transfer BCW60B
Ratio

Transition Frequency f

Emitter-Base Capacitance C

Collector-Base Capacitance C

Noise Figure N 2 6 dB I

Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
Turn-Off Time

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
Spice parameter data is available upon request for this device

BCW60C

BCW60D

= 25°C unless otherwise stated).

amb

V

(BR)CEO

V

(BR)EBO

I

CES

EBO

V

CE(sat)

V

BE(SAT)

BE

h

FE

T

ebo

cbo

t

d

t

r

t

on

t

s

t

f

t

off

32 V IC=2mA

5V

2020nA

µA

20 nA V

0.12

0.35

0.20

0.55VV

0.60

0.70

0.83

0.85

1.05VV

0.70

0.52

0.55

0.65

0.75VV

0.78

V

78
170 220

120
50

145

20

250 310

180
70

220

40

350 460

250
90

300

100

500 630

380
100

=1µA

I

EBO

V

CES

V

CES

EBO

IC=10mA, IB = 0.25mA

= 50mA, IB =1.25mA

I

C

IC=10mA, IB=0.25mA
I

=50mA, IB=1.25mA

C

I

=10µA, V

C

=2mA, V

I

C

I

=50mA, VCE =1V

C

I

=10µA, V

C

I

=2mA, VCE =5V

C

=50mA, VCE =1V

I

C

I

=10µA, V

C

I

=2mA, VCE =5V

C

=50mA, VCE =1V

I

C

I

=10µA, V

C

I

=2mA, VCE =5V

C

=50mA, VCE =1V

I

C

I

=10µA, V

C

I

=2mA, VCE =5V

C

=50mA, VCE =1V

I

C

125 250 MHz IC =10mA, VCE =5V

f = 100MHz

8pFV

4.5 pF V

150

800

ns
ns
ns
ns
ns
ns

35
50
85
400
80
480

EBO

CBO

= 0.2mA, VCE = 5V

C

R

=2KΩ, f=1KH

G

∆f=200Hz

I

C:IB1

R

=5KΩ, R2=5KΩ

1

=3.6V, R

V

BB

=32V
=32V ,T

amb

=150oC

=4V

=5V

CE

=5V

CE

=5V

CE

=5V

CE

=5V

CE

=5V

CE

=0.5V, f =1MHz

=10V, f =1MHz

:- IB2 =10:1:1mA

=990Ω

L