SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2 FEBRUARY 95
BCV71
BCV72
PARTMARKING DETAIL: BCV71 K7
BCV72 K8
C
BCV71R K6
BCV72R K9
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
CBO
CEO
EBO
CM
C
tot
j:Tstg
= 25°C unless otherwise stated).
amb
80 V
60 V
5V
200 mA
100 mA
330 mW
-55 to +150 °C
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector- base
Cut-Off Current
Base - Emitter Voltage V
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward BCV71
Current Transfer
I
CBO
BE
V
CE(sat)
V
BE(sat)
h
FE
550 750 mV IC=2mA, VCE = 5V
110
Ratio BCV72
200
Transition Frequency f
Collector Capacitance C
T
TC
Noise Figure N 10 dB
10010nAmAVCB=20V
V
120
250 mVmVIC=10mA, IB = 0.5mA
210
750
850
90
220
150
450
I
C
mVmVIC=10mA, IB=0.5mA
I
C
I
C
I
C
I
C
I
C
=20V,T
CB
= 50mA, IB =2.5mA
=50mA, IB=2.5mA
=10mA, VCE=5V
=2mA, VCE=5V
=10mA, VCE=5V
=2mA, VCE=5V
amb
=100°C
300 MHz IC=10mA, VCE=5V
f = 35MHz
4pFI
=Ie =0, VCB = 10V
E
f= 1MHz
= 200µA, V
I
C
=2KΩ, f=1KHz
R
S
B= 200Hz
CE
= 5V
Spice parameter data is available upon request for this device
E
B
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