ZETEX ZXMN3A02N8 Technical data

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30V N-CHANNEL ENHANCEMENT MODE MOSFET

ZXMN3A02N8

SUMMARY
V

(BR)DSS

= 30V; R

DS(ON)

= 0.025 ID= 9.0A

DESCRIPTION

This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.

FEATURES

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

• Low profile SOIC package

APPLICATIONS

•

Disconnect switches

•

Motor control

ORDERING INFORMATION

SO8

DEVICE REEL

SIZE

ZXMN3A02N8TA 7” 12mm 500 units
ZXMN3A02N8TC 13” 12mm 2500 units

TAPE

WIDTH

QUANTITY

PER REEL

DEVICE MARKING

•

ZXMN
3A02

ISSUE 3 - AUGUST 2003

PINOUT

Top View

1

SEMICONDUCTORS

ZXMN3A02N8

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate Source Voltage V
Continuous Drain Current V

=-10V; TA=25°C (b)

GS

V

=-10V; TA=70°C (b)

GS

V

=-10V; TA=25°C (a)

GS

Pulsed Drain Current (c) I
Continuous Source Current (Body Diode) (b) I
Pulsed Source Current (Body Diode) (c) I
Power Dissipation at T

Linear Derating Factor
Power Dissipation at T

Linear Derating Factor

=25°C (a)

A

=25°C (b)

A

Operating and Storage Temperature Range T

DSS
GS

I

D

DM
S
SM

P

D

P

D

j:Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a) R
Junction to Ambient (b) R

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300␮s - pulse width limited by maximum junction temperature.

θJA

θJA

30 V

20 V

9.0

7.2

7.3
44 A

3.2 A
44 A

1.56

12.5

mW/°C

2.5
20

mW/°C

-55 to +150 °C

80 °C/W
50 °C/W

A

W

W

SEMICONDUCTORS

ISSUE 3 - AUGUST 2003

2

CHARACTERISTICS

ZXMN3A02N8

ISSUE 3 - AUGUST 2003

3

SEMICONDUCTORS