ZETEX ZXMN2A14F Technical data

查询ZXMN2A14F供应商
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
=20V : RDS(on)=0.06 ; ID=4.1A
ZXMN2A14F
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23 package
APPLICATIONS
DC-DC Converters
Power Management functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE REEL
SIZE
ZXMN2A14FTA 7” 8mm 3000 units ZXMN2A14FTC 13” 8mm 10000 units
TAPE
WIDTH
QUANTITY
PER REEL
3
2
T
O
S
PINOUT
DEVICE MARKING
214
ISSUE 2 - SEPTEMBER 2003
1
SEMICONDUCTORS
ZXMN2A14F
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V Gate-Source Voltage V Continuous Drain Current
=4.5V; TA=25°C
@V
GS
@VGS=4.5V; TA=70°C @VGS=4.5V; TA=25°C
Pulsed Drain Current
(c)
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Power Dissipation at T
A
=25°C
(c)
(a)
(b) (b)
(a)
(b)
I
I I I P
DSS GS
D
DM S SM
D
Linear Derating Factor Power Dissipation at T
A
=25°C
(b)
P
D
Linear Derating Factor Operating and Storage Temperature Range T
j,Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient Junction to Ambient
NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 5 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction temperature.
(a)
(b)
R R
JA
JA
20 V
12 V
4.1
3.3
3.4 19 A
1.7 A 19 A
1 8
mW/°C
1.5 12
mW/°C
-55 to +150 °C
125 °C/W
82 °C/W
A A A
W
W
SEMICONDUCTORS
ISSUE 2 - SEPTEMBER 2003
2
CHARACTERISTICS
ZXMN2A14F
ISSUE 2 - SEPTEMBER 2003
3
SEMICONDUCTORS
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