Zetex ZC930TA, ZC931TA, ZC932TA, ZC933ATA, ZC933TA Datasheet

ZC930, ZMV930, ZV931 series

SILICON 12V HYPERABRUPT VARACTOR DIODES

Device Description

A range of silicon varactor diodes for use in frequency control and
filtering. Featuring closely controlled CV characteristics and high Q. Low
reverse current ensures very low phase noise performance. Available in
single or dual common cathode format in a wide rage of miniature
surface mount packages.

Features

Close tolerance C-V characteristics

·

Octave tuning from 0 to 6V

·

Low I

·

· Excellent phase noise performance

· High Q

· Range of miniature surface mount packages

Applications

· VCXO and TCXO

· Wireless communications

· Pagers

·

(typically 200pA)

R

Mobile radio

ISSUE 6 - JANUARY 2002

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ZC930, ZMV930, ZV931 series

TUNING CHARACTERISTICS at Tamb = 25°C

PART Capacitance

=1V

V

R

Capacitance

VR=2.5V

MIN pF MIN pF MAX pF MAX pF
930 8.70 4.30 5.50 2.90 200
931 13.50 6.50 7.80 4.00 300
932 17.00 8.50 10.50 5.50 200
933 42.00 18.00 27.00 12.00 150

933A 42.00 20.25 24.75 12.00 150

934 95.00 40.00 65.00 25.00 80

934A 95.00 47.25 57.75 25.00 80

Capacitance

VR=4V

Minimum Q

VR=4V

f=50MHz

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL MAX UNIT

Reverse voltage V
Forward current I
Power dissipation at T
Power dissipation at T
Power dissipation at T

=25⬚C SOT23 P

amb

=25⬚C SOD323 P

amb

=25⬚C SOD523 P

amb

R

F

tot

tot

tot

12 V
100 mA
330 mW
330 mW
250 mW

Operating and storage temperature range -55 to +150 ⬚C

ELECTRICAL CHARACTERISTICS at Tamb = 25°C

PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Reverse breakdown voltage I
Reverse voltage leakage V
Temperature coefficient of capacitance V

= 10uA 12 V

R

= 8V 0.2 100 nA

R

=3V,f=1MHz 300 400 ppCm/⬚C

R

ISSUE 6 - JANUARY 2002

2