WTE US1G-T3, US1A-T3, US1K-T3, US1K-T1, US1B-T3 Datasheet

WTE

POWER SEMICONDUCTORS

US1A – US1K

1.0A SURFACE MOUNT ULTRA FAST RECTIFIER

Features

!

Glass Passivated Die Construction

!

Ideally Suited for Automatic Assembly B

!

Low Forward Voltage Drop, High Efficiency

!

Surge Overload Rating to 30A Peak D

!

Low Power Loss A

!

Ultra-Fast Recovery Time F

!

Plastic Case Material has UL Flammability

Classification Rating 94V-O C H G

E

Mechanical Data

!

Case: Molded Plastic

!

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

!

Polarity: Cathode Band or Cathode Notch

!

Marking: Type Number

!

Weight: 0.064 grams (approx.)

Maximum Ratings and Electrical Characteristics

Characteristic Symbol US1A US1B US1D US1G US1J US1K Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

RMS Reverse Voltage V
Average Rectified Output Current @TL = 100°C I

RRM

V

RWM

V

R

V

R(RMS)

O

50 100 200 400 600 800 V

35 70 140 280 420 560 V

SMA/DO-214AC

Dim Min Max

A
B
C
D
E
F
G
H

All Dimensions in mm

@TA=25°C unless otherwise specified

2.50 2.90

4.00 4.60

1.40 1.60

0.152 0.305

4.80 5.28

2.00 2.44

0.051 0.203

0.76 1.52

1.0 A

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method) @T

Forward Voltage @IF = 1.0A V
Peak Reverse Current @TA = 25°C

At Rated DC Blocking Voltage @T
Reverse Recovery Time (Note 1) t
Typical Junction Capacitance (Note 2) C
Typical Thermal Resistance (Note 3) R
Operating and Storage Temperature Range T

Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A,

2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

3. Mounted on P.C. Board with 8.0mm

US1A – US1K 1 of 3 © 2002 Won-Top Electronics

= 55°C

A

= 100°C

A

2

land area.

FSM

I

FM

RM

I

rr

j

JL



j, TSTG

30 A

1.0 1.4 1.7 V
10

500

50 100 nS

15 pF
30 K/W

-50 to +150 °C

µA

10

(AV),

I AVERAGE FORWARD CURRENT (A)

1.0

0.5

0

25 50

40

30

75

T,LEAD TEMPERATURE ( C)

L

100 125 150

°

Fig. 1 Forward Current Derating Curve

Single Half Sine-Wave

(JEDEC Method)

F

I , INSTANTANEOUS FORWARD CURRENT (A)

1000

US1A - US1D

US1G

1.0

US1J-US1K

0.1

T - 25 C

Pulse Width = 300 sµ

0.01
0 0.4 0.8

V , INSTANTANEOUS FORWARD VOLTAGE (V)

F

1.2 1.6 2.0

Fig. 2 Typical Forward Characteristics

100

T = 100 C

°

j

10

°

j

20

10

T = 150 C

°

j

FSM

I , PEAK FORWARD SURGE CURRENT (A)

0

1 10 100

NUMBER OF CYCLES AT 60Hz

Fig. 3 Forward Surge Current Derating Curve

50 NI (Non-inductive)Ω

Device

Under

1.0

Test

Ω

NI

Oscilloscope

(Note 1)

(+)

50V DC
Approx

(-)

10 NIΩ

(-)

Pulse

Generator

(Note 2)

(+)

1.0

T = 25 C

°

j

0.1

0.01

R

I , INSTANTANEOUS REVERSE CURRENT (mA)

0 20 40 60 80 100 120 140

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

Fig. 4 Typical Reverse Characteristics

t

rr

+0.5A

0A

-0.25A

Notes:

1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF.

2. Rise Time = 10ns max. Input Impedance = 50 .

Ω

Ω

-1.0A

Settimebasefor10ns/cm

Fig. 5 Reverse Recovery Time Characteristic and Test Circuit

US1A – US1K 2 of 3 © 2002 Won-Top Electronics