WTE SB320, SB330, SB330-T3, SB330-TB, SB320-T3 Datasheet

WTE

POWER SEM ICOND UCTOR S

SB320 – SB360

3.0A SCHOTTKY BARRIER RECTIFIER

Features

!

Schottky Barrier Chip

!

Guard Ring Die Construction for

Transient Protection

!

High Current Capability A B A

!

Low Power Loss, High Efficiency

!

High Surge Current Capability

!

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity
Protection Applications C

D

Mechanical Data

!

Case: Molded Plastic

!

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

!

Polarity: Cathode Band

!

Weight: 1.2 grams (approx.)

!

Mounting Position: Any

!

Marking: Type Number

Maximum Ratings and Electrical Characteristics

Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

Characteristic Symbol SB320 SB330 SB340 SB350 SB360 Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

RMS Reverse Voltage V
Average Rectified Output Current (Note 1) @TL = 95°C I

Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)

Forward Voltage @IF = 3.0A V

RRM

V

RWM

V

R

V

R(RMS)

O

FSM

I

FM

DO-201AD

Dim Min Max

A
B
C
D

All Dimensions in mm

@TA=25°C unless otherwise specified

20 30 40 50 60 V

14 21 28 35 42 V

0.50 0.74 V

25.4 —

8.50 9.50

1.20 1.30

5.0 5.60

3.0 A

80 A

Peak Reverse Current @TA = 25°C
At Rated DC Blocking Voltage @T

Typical Junction Capacitance (Note 2) C
Typical Thermal Resistance Junction to Ambient R
Operating and Storage Temperature Range Tj, T

Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

SB320 – SB360 1 of 3 © 2002 Won-Top Electronics

= 100°C

A

RM

I

j

JA



STG

0.5
20

250 pF

20 K/W

-65 to +150 °C

mA

3.0

100

2.5

2.0

1.5

1.0

0.5

O,

I AVERAGE FORWARD CURRENT (A)

0

25 50 75 100 125 150

T , LEAD TEMPERATURE ( C)

L

Fig. 1 Forward Current Derating Curve

80

Single Half-Sine-Wave

64

48

°

(JEDEC Method)

T = 100 Cj°

F

I , INSTANTANEOUS FORWARD CURRENT (A)

10

SB320 - SB340

SB350 - SB360

1.0

0.1

0.01
0 0.2 0.4 0.6 0.8 1.0

V , INSTANTANEOUS FORWARD VOLTAGE (V)

F

Fig. 2 Typical Forward Characteristics

1000

100

T = 25 C

j

f=1.0MHz

°

32

16

FSM

I , PEAK FORWARD SURGE CURRENT (A)

0

1 10 100

NUMBER OF CYCLES AT 60 Hz

Fig. 3 Max Non-Repetitive Peak Fwd Surge Current

1k

100

10

1.0

0.1

R

I,INSTANTANEOUSREVERSECURRENT(mA)

0.01
0

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

j

C , CAPACITANCE (pF)

10

0.1

Fig. 4 Typical Junction Capacitance

T = 100 C

°

j

T = 75 C

°

j

T = 25 C

°

j

20 40 60 80 100 120 140

Fig. 5 Typical Reverse Characteristics

110

V , REVERSE VOLTAGE (V)

R

100

SB320 – SB360 2 of 3 © 2002 Won-Top Electronics