WTE SB3030PT, SB3035PT, SB3060PT, SB3040PT, SB3045PT Datasheet
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WTE
POWER SEM ICOND UCTOR S
SB3030PT – SB3060PT
30A SCHOTTKY BARRIER RECTIFIER
Features
!
Schottky Barrier Chip H
!
Guard Ring for Transient Protection
!
High Current Capability, Low Forward
!
Low Reverse Leakage Current S
!
High Surge Current Capability J
!
Plastic Material has UL Flammability R K
Classification 94V-O
PIN1 2 3
L P
Mechanical Data N
!
Case: Molded Plastic
!
Terminals: Plated Leads Solderable per M
MIL-STD-750, Method 2026 A
!
Polarity: As Marked on Body B
!
Weight: 5.6 grams (approx.)
!
Mounting Position: Any
!
Marking: Type Number C
Dim Min Max
A
B
C
D
E
G
H
J
K
L
M
N
P
R
S
TO-3P
3.20 3.50
4.59 5.16
20.80 21.30
19.70 20.20
2.10 2.40
0.51 0.76
15.90 16.40
1.70 2.70
3.10 Ø 3.30 Ø
3.50 4.51
5.20 5.70
1.12 1.22
2.90 3.30
11.70 12.80
4.30 Typical
All Dimensions in mm
G
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage V
Average Rectified Output Current @TC = 95°C I
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage @IF = 15A V
Peak Reverse Current @TA = 25°C
At Rated DC Blocking Voltage @T
Typical Junction Capacitance (Note 1) C
= 100°C
A
RRM
V
RWM
V
R
V
R(RMS)
O
FSM
I
FM
RM
I
j
@TA=25°C unless otherwise specified
SB
3030PTSB3035PTSB3040PTSB3045PTSB3050PTSB3060PT
30 35 40 45 50 60 V
21 24.5 28 31.5 35 42 V
D
E
30 A
275 A
0.55 0.70 V
1.0
75
1100 pF
PIN 1 - +
PIN 3 - Case PIN 2
Unit
mA
Typical Thermal Resistance Junction to Case (Note 2) R
Operating and Storage Temperature Range Tj, T
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to case mounted on heatsink.
SB3030PT – SB3060PT 1 of 3 © 2002 Won-Top Electronics
JC
STG
2.0 K/W
-65 to +150 °C
(AV)
I , AVERAGE RECTIFIED CURRENT (A)
30
24
18
12
100
SB3030PT-SB3045PT
10
SB3050PT-SB3060PT
1.0
6
T = 25°C
j
Pulse width = 300 µs
F
0
0
50
T , CASE TEMPERATURE (°C)
C
100
150
Fig. 1 Forward Derating Curve
I , INSTANTANEOUS FORWARD CURRENT (A)
0.1
0.2 0.4 0.6 0.8
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig. 2 Typical Fwd Characteristics per Element
2% duty cycle
FSM
I , PEAK FORWARD SURGE CURRENT (A)
300
8.3 ms single half-sine-wave
JEDEC method
250
200
150
100
50
0
1 10 100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
100
10
T = 100°C
C
j
C , JUNCTION CAPACITANCE (pF)
4000
1000
100
0.1 1.0 10 100
V , REVERSE VOLTAGE (V)
R
Fig. 4 Typical Junction Capacitance per Element
T = 25°C
j
f = 1MHz
T = 75°C
C
1.0
T = 25°C
C
R
I , INSTANTANEOUS REVERSE CURRENT (A)
0.1
0.01
04080
120
PERCENT OF PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics per Element
SB3030PT – SB3060PT 2 of 3 © 2002 Won-Top Electronics
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