WTE SB120, SB120-T3, SB140, SB140-T3, SB140-TB Datasheet
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WTE
POWER SEM ICOND UCTOR S
SB120 – SB160
1.0A SCHOTTKY BARRIER RECTIFIER
Features
!
Schottky Barrier Chip
!
Guard Ring Die Construction for
Transient Protection
!
High Current Capability A B A
!
Low Power Loss, High Efficiency
!
High Surge Current Capability
!
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications C
D
Mechanical Data
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Case: Molded Plastic
!
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
!
Polarity: Cathode Band
!
Weight: 0.34 grams (approx.)
!
Mounting Position: Any
!
Marking: Type Number
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol SB120 SB130 SB140 SB150 SB160 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage V
Average Rectified Output Current (Note 1) @TL = 100°C I
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage @IF = 1.0A V
RRM
V
RWM
V
R
V
R(RMS)
O
FSM
I
FM
DO-41
Dim Min Max
A
B
C
D
All Dimensions in mm
@TA=25°C unless otherwise specified
20 30 40 50 60 V
14 21 28 35 42 V
0.50 0.70 V
25.4 —
4.06 5.21
0.71 0.864
2.00 2.72
1.0 A
40 A
Peak Reverse Current @TA = 25°C
At Rated DC Blocking Voltage @T
Typical Junction Capacitance (Note 2) C
Typical Thermal Resistance Junction to Lead R
Typical Thermal Resistance Junction to Ambient (Note 1) R
Operating and Storage Temperature Range Tj, T
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
SB120 - SB160 1 of 3 © 2002 Won-Top Electronics
= 100°C
A
RM
I
j
JL
JA
STG
110 80 pF
0.5
10
15 K/W
50 K/W
-65 to +150 °C
mA
1.0
20
10
SB120 - SB140
SB150-SB160
0.5
(O),
I AVERAGE FORWARD CURRENT (A)
0
25 50 75 100 125 150
T , LEAD TEMPERATURE ( C)
L
Fig. 1 Forward Current Derating Curve
40
Single Half Sine-Wave
(JEDEC Method)
T = 150 C
j
30
20
10
1.0
T = 25 Cj°
F
I , INSTANTANEOUS FORWARD CURRENT (A)
0.1
I Pulse Width = 300 sFµ
0.50.1 0.9 1.3 1.7 2.1
°
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig. 2 Typical Forward Characteristics
1000
T = 25 C
°
j
f = 1.0MHz
°
SB120 - SB140
SB150 - SB160
100
j
C , JUNCTION CAPACITANCE (pF)
FSM
0
I , PEAK FORWARD SURGE CURRENT (A)
1 10 100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
100
10
T = 100 C
1.0
0.1
0.01
R
0.001
I , INSTANTANEOUS REVERSE CURRENT (mA)
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
10
0.1 1 10 100
°
j
T = 75 C
°
j
T = 25 C
°
j
Fig. 5 Typical Reverse Characteristics
V , REVERSE VOLTAGE (V)
R
Fig. 4 Typical Junction Capacitance
SB120 – SB160 2 of 3 © 2002 Won-Top Electronics
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