WTE KBJ4M, KBJ4K, KBJ4G, KBJ4D, KBJ4B Datasheet
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WTE
POWER SEM ICOND UCTOR S
KBJ4A – KBJ4M
Features
!
Diffused Junction
!
Low Forward Voltage Drop A
!
High Current Capability G
!
High Reliability
!
High Surge Current Capability
!
Ideal for Printed Circuit Boards
C + ~ ~ -
H
J L D
K E
Mechanical Data
!
Case: Molded Plastic
!
Terminals: Plated Leads Solderable per M
MIL-STD-202, Method 208 N
!
Polarity: As Marked on Body
!
Weight: 4.0 grams (approx.)
!
Mounting Position: Any R
!
Marking: Type Number G
T
B
P P P
S
4.0A BRIDGE RECTIFIER
KBJ-4
Dim Min Max
A
24.7 25.3
B
14.7 15.3
C
D
E
G
H
J
K
L
M
N
P
R
S
T
All Dimensions in mm
—4.0
17.0 18.0
3.3 3.7
3.1Ø 3.4Ø
1.05 1.45
1.7 2.1
0.9 1.1
1.5 1.9
4.8 5.16
3.8 4.4
7.3 7.7
9.3 9.7
3.4 3.9
0.6 0.8
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol KBJ4A KBJ4B KBJ4D KBJ4G KBJ4J KBJ4K KBJ4M Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage V
Average Rectified Output Current @TC = 100°C
@T
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
I2t Rating for Fusing (t < 8.35ms) I2t93A
Forward Voltage (per diode) @IF = 2.0A V
Peak Reverse Current @TA = 25°C
At Rated DC Blocking Voltage @T
Typical Thermal Resistance (per leg) (Note 1) R
Typical Thermal Resistance (per leg) (Note 2) R
Operating and Storage Temperature Range T
= 25°C
A
= 100°C
C
RRM
V
RWM
V
R
V
R(RMS)
O
I
FSM
I
FM
R
I
j, TSTG
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
JA
JC
@TA=25°C unless otherwise specified
4.0
2.4
150 A
1.0 V
5.0
500
30 K/W
5.5 K/W
-55 to +150 °C
µA
A
2
s
Note: 1. Thermal resistance junction to ambient, mounted on PCB at 9.5mm lead length.
2. Thermal resistance junction to case, mounted on 5.0 x 4.0 x 0.8cm thick AL plate heatsink.
KBJ4A – KBJ4M 1 of 3 © 2002 Won-Top Electronics
6
100
5
O
I , AVERAGE RECTIFIED CURRENT (A)
160
120
80
4
3
PC Board
Heatsink
2
1
Resistive or
Inductive load
0
0
25 50 75 100 125 150
T,TEMPERATURE(C)
°
Fig.1ForwardCurrentDeratingCurve
Single half-sine-wave
(JEDEC method)
T=25Cj°
T = 25 C
°
j
10
1.0
Pulse width = 300 sµ
F
I , INSTANTANEOUS FORWARD CURRENT (A)
0.1
0.2
0.0
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
0.6 1.0
1.4
1.8
Fig.2TypicalFwdCharacteristics, per element
100
°
T=25C
j
f = 1.0MHz
10
FSM
I , PEAK FORWARD SURGE CURRENT (A)
40
0
1
10
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
100
j
C , JUNCTION CAPACITANCE (pF)
1
1 10 100
V , REVERSE VOLTAGE (V)
R
Fig. 4 Typical Junction Capacitance
KBJ4A – KBJ4M 2 of 3 © 2002 Won-Top Electronics
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