WTE KBJ2B, KBJ2K, KBJ2J, KBJ2G, KBJ2A Datasheet
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WTE
POWER SEM ICOND UCTOR S
KBJ2A – KBJ2M
Features
!
Diffused Junction
!
Low Forward Voltage Drop A
!
High Current Capability H
!
High Reliability
!
High Surge Current Capability
!
Ideal for Printed Circuit Boards
J G D
K E
Mechanical Data
!
Case: Molded Plastic
!
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208 C
!
Polarity: As Marked on Body
!
Weight: 2.0 grams (approx.)
!
Mounting Position: Any
!
Marking: Type Number
L
M
B
P P P
2.0A BRIDGE RECTIFIER
KBJ-2
Dim Min Max
A
19.7 20.3
B
10.7 11.3
C
D
E
G
H
J
K
L
M
P
All Dimensions in mm
3.8 —
13.0 14.0
2.3 2.7
1.65 —
3.17 x 45°
2.3 2.7
0.9 1.14
0.8 1.2
—0.51
4.8 5.3
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol KBJ2A KBJ2B KBJ2D KBJ2G KBJ2J KBJ2K KBJ2M Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage V
Average Rectified Output Current @TA = 50°C I
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
I2t Rating for Fusing (t < 8.35ms) I2t32A
Forward Voltage (per diode) @IF = 1.0A V
Peak Reverse Current @TA = 25°C
At Rated DC Blocking Voltage @T
Typical Thermal Resistance (per leg) (Note 1) R
Typical Thermal Resistance (per leg) (Note 2) R
Operating and Storage Temperature Range T
= 100°C
C
RRM
V
RWM
V
R
V
R(RMS)
O
FSM
I
FM
R
I
j, TSTG
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
JA
JC
@TA=25°C unless otherwise specified
2.0 A
50 A
1.0 V
10
500
47 K/W
10 K/W
-55 to +150 °C
µA
2
s
Note: 1. Thermal resistance junction to ambient, mounted on PCB at 9.5mm lead length.
2. Thermal resistance junction to case, mounted on 5.0 x 4.0 x 0.8cm thick AL plate heatsink.
KBJ2A – KBJ2M 1 of 3 © 2002 Won-Top Electronics
6
100
5
T = 25 C
°
4
10
j
3
FSM
I , PEAK FORWARD SURGE CURRENT (A)
O
I , AVERAGE RECTIFIED CURRENT (A)
2
1
Resistive or
Inductive load
0
0
25 50 75 100 125 150
T,TEMPERATURE(C)
°
Fig.1ForwardCurrentDeratingCurve
Single half-sine-wave
50
(JEDEC method)
40
30
20
10
1
10
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
T=25Cj°
100
1.0
Pulse width = 300 sµ
F
I , INSTANTANEOUS FORWARD CURRENT (A)
0.1
0.2
0.0
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
0.6 1.0
Fig.2TypicalFwdCharacteristics, per element
100
10
j
C , JUNCTION CAPACITANCE (pF)
1
1 10 100
V , REVERSE VOLTAGE (V)
R
Fig. 4 Typical Junction Capacitance
1.4
T=25C
j
f = 1.0MHz
1.8
°
KBJ2A – KBJ2M 2 of 3 © 2002 Won-Top Electronics
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