WTE 1H8-TB, 1H8-T3, 1H8, 1H7-TB, 1H7-T3 Datasheet
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WTE
POWER SEMICONDUCTORS
1H1 – 1H8
1.0A MINIATURE HIGH EFFICIENCY RECTIFIER
Features
!
Diffused Junction
!
Low Forward Voltage Drop
!
High Current Capability A B A
!
High Reliability
!
High Surge Current Capability
Mechanical Data
!
Case: Molded Plastic D
!
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
!
Polarity: Cathode Band
!
Weight: 0.181grams (approx.)
!
Mounting Position: Any
!
Marking: Type Number
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol 1H1 1H2 1H3 1H4 1H5 1H6 1H7 1H8 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage V
RRM
V
RWM
V
R
V
R(RMS)
50 100 200 300 400 600 800 1000 V
35 70 140 210 280 420 560 700 V
Dim Min Max
A
B
C
D
All Dimensions in mm
@TA=25°C unless otherwise specified
R-1
20.0 —
2.00 3.50
0.53 0.64
2.20 2.60
C
Average Rectified Output Current
(Note 1) @T
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage @IF = 1.0A V
Peak Reverse Current @TA = 25°C
At Rated DC Blocking Voltage @T
Reverse Recovery Time (Note 2) t
Typical Junction Capacitance (Note 3) C
Operating Temperature Range T
Storage Temperature Range T
= 55°C
A
= 100°C
A
I
I
FSM
RM
I
STG
O
FM
rr
1.0 A
30 A
1.0 1.3 1.7 V
5.0
100
50 75 nS
j
j
20 15 pF
-65 to +125 °C
-65 to +150 °C
µA
*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 1.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
1H1 – 1H8 1 of 3 © 2002 Won-Top Electronics
1.00
0.75
0.50
Single phase half wave
Resistive or Inductive load
10
1.0
T = 25 C
°
j
Pulse width = 300 s
µ
1H1-1H4
1H5
0.25
(AV)
I , AVERAGE FWD RECTIFIED CURRENT (A)
0
02550
T , AMBIENT TEMPERATURE ( C)
A
75
100 125 150 175
Fig. 1 Forward Current Derating Curve
30
Pulse width
8.3 ms single half-sine-wave
(JEDEC method)
20
10
FSM
I , PEAK FORWARD SURGE CURRENT (A)
0
1 10 100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Peak Forward Surge Current
0.1
1H6 -1H8
F
I , INSTANTANEOUS FORWARD CURRENT (A)
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
°
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig. 2 Typical Forward Characteristics
100
1H1-1H5
T = 25 C
°
j
f = 1.0MHz
10
1H6 -1H8
j
C , CAPACITANCE (pF)
1
1 10 100
V , REVERSE VOLTAGE (V)
R
Fig. 4 Typical Junction Capacitance
t
rr
+0.5A
50 NI (Non-inductive)Ω
Device
Under
Test
(+)
50V DC
Approx
(-)
1.0
Ω
NI
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF.
2. Rise Time = 10ns max. Input Impedance = 50 .
10 NIΩ
Oscilloscope
(Note 1)
Generator
(Note 2)
Ω
Ω
(-)
Pulse
(+)
0A
-0.25A
-1.0A
Settimebasefor5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
1H1 – 1H8 2 of 3 © 2002 Won-Top Electronics
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