The EC1089 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve high performance across a broad range with
+41 dBm OIP3 and +24 dBm of compressed 1dB power. It
is housed in an industry standard SOT-89 SMT package.
The EC1089 is also available in a lead-free/green/RoHScompliant SOT-89 package. All devices are 100% RF and
DC tested.
The EC1089 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
EC1089 to maintain high linearity over temperature and
operate directly off a single +5 V supply. This combination
makes the device an excellent candidate for transceiver line
cards in current and next generation multi-carrier 3G base
stations.
Specifications
Parameters Units Min Typ Max
Operational Bandwidth MHz 10 2500
Test Frequency MHz 1900
Gain dB 10.5 12.2
Input Return Loss dB 15
Output Return Loss dB 10
Output P1dB dBm +23.5
Output IP3
IS-95A Channel Power
@ -45 dBc ACPR
Noise Figure dB 5.9
Test Frequency MHz 2140
Gain dB 11.5
Output P1dB dBm +23.5
Output IP3
Operating Current Range mA 140 160 175
Device Voltage V +5
1. Test conditions unless otherwise noted: 25º C, Supply Voltage = +5 V, , in tuned application circuit.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
(2)
dBm +40 +41
(2)
dBm +40
(1)
dBm +17
Product Description
Typical Performance
Parameters Units Typical
Frequency MHz 900 1900 2140
S21 - Gain dB 15.5 12.2 11.5
S11 - Input R.L. dB -14 -15 -15
S22 - Output R.L. dB -10 -10 -10
Output P1dB dBm +24 +23.5 +23.5
Output IP3 dBm +40 +41 +40
Noise Figure dB 5.1 5.9 5.4
Supply Bias +5 V @ 160 mA
3. Typical parameters reflect performance in a tuned application circuit: Supply Voltage = +5 V, I =
160 mA, +25
C
Functional Diagram
GND
1
RF IN GND
4
EC1089B / EC1089B-G
(3)
Absolute Maximum Rating
Parameter Rating
Operating Case Temperature
Storage Temperature
RF Input Power (continuous) +18 dBm
Device Voltage +6 V
Device Current 220 mA
Junction Temperature
Operation of this device above any of these parameters may cause permanent damage.
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency,
it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line.
The return loss plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increments.
S-Parameters (VDS = +5 V, IDS = 160 mA, T = 25C, unmatched 50 ohm system, calibrated to device leads)
¼ Watt, High Linearity InGaP HBT Amplifier Product Information
EC1089B (SOT-89 Package) Mechanical Information
This package may contain lead-bearing materials. The plating material on the leads is SnPb.
Outline Drawing
Product Marking
The component will be marked with an
“1089” designator with an alphanumeric lot
code on the top surface of the package.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
MSL / ESD Rating
Land Pattern
Thermal Specifications
Parameter Rating
Operating Case Temperature -40 to +85q C
Thermal Resistance
Junction Temperature
Notes:
1. The thermal resistance is referenced from the junctionto-case at a case temperature of 85 C.
2. This corresponds to the typical biasing condition of +5V,
160 mA at an 85 C case temperature. A minimum
MTTF of 1 million hours is achieved for junction
temperatures below 247
(1)
149q C / W
(2)
204q C
C.
1000.0
MTTF vs. GND Tab Temperature
100.0
10.0
1.0
60708090100110120
Tab Temperature (°C)
ESD Rating: Class 1A
Value: Passes between 250 and 500V
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
MSL Rating: Level 3 at +235 C convection reflow
Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper
performance of this device. Vias should use a .35mm
(#80 / .0135” ) diameter drill and have a final plated
thru diameter of .25 mm (.010” ).
2. Add as much copper as possible to inner and outer
layers near the part to ensure optimal thermal
performance.
3. Mounting screws can be added near the part to fasten
the board to a heatsink. Ensure that the ground /
thermal via region contacts the heatsink.
4. Do not put solder mask on the backside of the PC board
in the region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material
and construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are
in degrees.
Specifications and information are subject to change without notice