Winbond Electronics W24L257AQ-20, W24L257AQ-15, W24L257AK-20, W24L257AQ-12, W24L257AK-15 Datasheet
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W24L257A
A13
CS
WE
OE
32K × 8 HIGH-SPEED CMOS STATIC RAM
GENERAL DESCRIPTION
The W24L257A is a high-speed, low-power CMOS static RAM organized as 32768 × 8 bits that
operates on a single 3.3-volt power supply. This device is manufactured using Winbond's high
performance CMOS technology.
FEATURES
• High-speed access time: 12/15/20 nS (max.)
• Low-power consumption:
− Active: 200 mW (typ.)
• Single +3.3V power supply
• Fully static operation
PIN CONFIGURATION
A14
A12
I/O1
I/O2
I/O3
V
1
2
A7
3
A6
4
A5
5
A4
6
A3
7
A2
A1
A0
SS
28-DIP
8
9
10
11
12
13
14
28
V
DD
27
WE
26
A13
25
A8
24
A9
A11
23
OE
22
A10
21
20
CS
I/O8
19
18
I/O7
17
I/O6
I/O5
16
I/O4
15
• All inputs and outputs directly TTL compatible
• Three-state outputs
• Available packages: 28-pin 300 mil SOJ,
skinny DIP and standard type one TSOP
(8 mm × 13.4 mm)
BLOCK DIAGRAM
V
DD
SS
V
A0
.
DECODER
A14
CS
OE
WE
.
CONTROL
CORE
ARRAY
AR RAY
DATA I/O
I/O1
I/O8
.
.
PIN DESCRIPTION
SYMBOL DESCRIPTION
A11
WE
V
A14
A12
OE
1
2
3
A9
4
A8
5
6
7
DD
8
9
10
A7
11
A6
12
A5
13
A4
14
A3
28-pin
TSOP
A10
28
CS
27
I/O8
26
I/O7
25
I/O6
24
I/O5
23
I/O4
22
V
21
SS
20
I/O3
I/O2
19
I/O1
18
A0
17
A1
16
A2
15
A0−A14
I/O1−I/O8
VDD Power Supply
Address Inputs
Data Inputs/Outputs
Chip Select Input
Write Enable Input
Output Enable Input
VSS Ground
Publication Release Date: December 1996
- 1 - Revision A5
TRUTH TABLE
CS
CS
CS
W24L257A
CS OE WE MODE
H X X Not Selected High Z ISB, ISB1
L H H Output Disable High Z IDD
L L H Read Data Out IDD
L X L Write Data In IDD
I/O1−I/O8
VDD CURRENT
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER RATING UNIT
Supply Voltage to VSS Potential -0.5 to +4.6 V
Input/Output to VSS Potential -0.5 to VDD +0.5 V
Allowable Power Dissipation 1.0 W
Storage Temperature -65 to +150
Operating Temperature 0 to +70
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
Operating Characteristics
(VDD = 3.3V ± 5%, VSS = 0V, Ta = 0 to 70° C)
PARAMETER SYM
.
Input Low Voltage VIL - -0.5 - +0.8 V
Input High Voltage VIH - +2.0 - VDD +0.3 V
Input Leakage Current ILI VIN = VSS to VDD -10 - +10
Output Leakage
Current
Output Low Voltage VOL IOL = +8.0 mA - - 0.4 V
Output High Voltage VOH IOH = -4.0 mA 2.4 - - V
Operating Power IDD
Supply Current Cycle = min. 15 - - 120 mA
Standby Power
Supply Current
Note: Typical characteristics are at VDD = 3.3V, Ta = 25° C.
ILO
VI/O = VSS to VDD, CS = VIH (min.)
or OE = VIH (min.) or WE = VIL (max.)
Duty = 100% 20 - - 100 mA
ISB
Duty = 100%
ISB1
TEST CONDITIONS MIN.TYP.MAX. UNIT
-10 - + 10
= VIL (max.), I/O = 0 mA
= VIH (min.), Cycle = min.
≥ VDD -0.2V
12 - - 150 mA
- - 20 mA
- - 200
°C
°C
µA
µA
µA
- 2 -
W24L257A
CAPACITANCE
(VDD = 3.3V, Ta = 25° C, f = 1 MHz)
PARAMETER SYM. CONDITIONS MAX. UNIT
Input Capacitance CIN VIN = 0V 6 pF
Input/Output Capacitance CI/O VOUT = 0V 8 pF
Note: These parameters are sampled but not 100% tested.
AC CHARACTERISTICS
AC Test Conditions
PARAMETER CONDITIONS
Input Pulse Levels 0V to 3V
Input Rise and Fall Times 3 nS
Input and Output Timing Reference Level 1.5V
Output Load CL = 30 pF, IOH/IOL = -4 mA/8 mA
AC Test Loads and Waveform
3.3V
OUTPUT
R1 320 ohm
30 pF
Including
Jig and
Scope
R2
350 ohm
3.0V
0V
3 nS
90% 90%
10%
10%
3.3V
OUTPUT
(For
3 nS
T
CLZ
T
OLZTCHZ
,
R1 320 ohm
5 pF
Including
Jig and
Scope
TOHZ
,
,
,
T
WHZ
R2
350 ohm
,
)
TOW
Publication Release Date: December 1996
- 3 - Revision A5
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