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W26010A
64K × 16 HIGH-SPEED CMOS STATIC RAM
GENERAL DESCRIPTION
The W26010A is a high-speed, low-power CMOS static RAM organized as 65,536 × 16 bits that
operates on a single 5-volt power supply. This device is manufactured using Winbond's high
performance CMOS technology.
The W26010A has an active low chip select, separate upper and lower byte selects, and a fast output
enable. No clock or refreshing is required. Separate byte select controls (#LB and #UB) allow individual
bytes to be written and read. #LB controls I/O1-I/O8, the lower byte. #UB controls I/O9−I/O16, the
upper byte. This device is well suited for use in high-density, high-speed system applications.
FEATURES
• High speed access time: 15/20/25 nS (max.)
• Low power consumption:
− Active: 1.3W (max.)
• Single +5V power supply
• Fully static operation
− No clock or refreshing
• All inputs and outputs directly TTL compatible
• Three-state outputs
• Data byte control
− #LB (I/O1−I/O8), #UB (I/O9−I/O16)
• Available packages: 44-pin 400 mil SOJ and
Type II TSOP
PIN CONFIGURATION
1
A0
2
A1
3
A2
4
A3
5
A4
6
#CS
I/O1
7
8
I/O2
9
I/O3
10
I/O4
11
V
DD
V
12
SS
13
I/O5
14
I/O6
15
I/O7
16
I/O8
17
#WE
18
A5
19
A6
20
A7
21
A8
22
NC
BLOCK DIAGRAM
V
DD
V
SS
44
A15
A14
43
A13
42
41
#OE
40
#UB
#LB
39
I/O16
38
I/O15
37
I/O14
36
I/O13
35
V
34
SS
V
33
DD
32
I/O12
31
I/O11
I/O10
30
I/O9
29
NC
28
A12
27
A11
26
A10
25
A9
24
23
NC
PIN DESCRIPTION
A0
.
DECODER
A15
#UB
#CS
#OE
#WE
#LB
.
CONTROL
CORE
ARRAY
DATA I/O
I/O1
I/O16
SYMBOL DESCRIPTION
A0−A15
I/O1−I/O16
Address Inputs
Data Inputs/Outputs
#CS Chip Select Inputs
#WE Write Enable Input
#OE
#LB
#UB
Output Enable Input
Lower Byte Select I/O1−I/O8
Upper Byte Select I/O9−I/O16
VDD Power Supply
VSS Ground
NC No Connection
.
.
Publication Release Date: May 2001
- 1 - Revision A5
TRUTH TABLE
W26010A
#CS #OE #WE #LB #UB
H X X X X Not Selected High Z High Z ISB, ISB1
L H H X X Output Disable High Z High Z IDD
L L H L L 2 Bytes Read DOUT DOUT IDD
L L H L H Lower Byte Read DOUT High Z IDD
L L H H L Upper Byte Read High Z DOUT IDD
L X L L L 2 Bytes Write DIN DIN IDD
L X L L H Lower Byte Write DIN High Z IDD
L X L H L Upper Byte Write High Z DIN IDD
L X X H H Output Disable High Z High Z IDD
MODE
I/O1−I/O8 I/O9−I/O16
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER RATING UNIT
Supply Voltage to VSS Potential -0.5 to +7.0 V
Input/Output to VSS Potential -0.5 to VDD +0.5 V
Allowable Power Dissipation 1.5 W
VDD CURRENT
Storage Temperature -65 to +150
Operating Temperature 0 to +70
I -40 to 85
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
°C
°C
Operating Characteristics
(VDD = 5V ±10%, VSS = 0V, TA = 0 to 70° C, I for –40 to 85° C)
PARAMETER SYM.
Input Low Voltage VIL - -0.5 - +0.8 V
Input High Voltage VIH - +2.2 - VDD +0.5
Input Leakage Current ILI VIN = VSS to VDD -10 - +10
Output Leakage Current ILO VI/O = VSS to VDD
Output Low Voltage VOL IOL = +8.0 mA - - 0.4 V
Output High Voltage VOH IOH = -4.0 mA 2.4 - - V
- 2 -
TEST CONDITIONS MIN. TYP. MAX. UNIT
-10 - +10
Output Pins in High Z
See Truth Table
V
µA
µA
Operating Characteristics, continued
W26010A
PARAMETER SYM.
Operating Power IDD #CS = VIL (max.), 15
Supply Current
Duty = 100% 25
Standby Power
Supply Current
ISB1 #CS = VDD -0.2V, I/O = open
Note: Typical characteristics are evaluated at VDD = 5V, TA = 25° C.
I/O = open, Cycle = min. 20
ISB #CS = VIH (min.), I/O = open
TEST CONDITIONS MIN. TYP. MAX. UNIT
- - 260
- - 220 mA
- - 200
- - 50 mA
All other pins = VDD -0.2V/GND
- - 10 mA
All other pins = VDD -0.2V/GND
CAPACITANCE
(VDD = 5V, TA = 25° C, f = 1 MHz)
PARAMETER SYM. CONDITIONS MAX. UNIT
Input Capacitance CIN VIN = 0V 6 pF
Input/Output Capacitance CI/O VOUT = 0V 8 pF
Note: These parameters are sampled but not 100% tested.
AC CHARACTERISTICS
AC Test Conditions
PARAMETER CONDITIONS
Input Pulse Levels 0V to 3V
Input Rise and Fall Times 3 nS
Input and Output Timing Reference Level 1.5V
Output Load CL = 30 pF, IOH/IOL = -4 mA/8 mA
Publication Release Date: May 2001
- 3 - Revision A5