Westcode Semiconductors P0128SH10#, P0128SH12# Data Sheet
Fast Turn-off Thyristor
Type P0128SH10# to P0128SH12#
Absolute Maximum Ratings
Date:- 12 Aug, 2003
Data Sheet Issue:- 1
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
Repetitive peak off-state voltage, (note 1) 1000-1200 V
Non-repetitive peak off-state voltage, (note 1) 1000-1200 V
Repetitive peak reverse voltage, (note 1) 1000-1200 V
Non-repetitive peak reverse voltage, (note 1) 1100-1300 V
OTHER RATINGS
I
T(AVM)
I
T(AVM)
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
I2tI
I2t
(di/dt)
V
RGM
P
G(AV)
P
GM
T
j op
T
stg
Maximum average on-state current, T
Maximum average on-state current. T
Nominal RMS on-state current, T
D.C. on-state current, T
Peak non-repetitive surge tp=10ms, Vrm=0.6V
Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 3)
2
t capacity for fusing tp=10ms, Vrm=0.6V
2
t capacity for fusing tp=10ms, Vrm≤10V, (note 3)
I
Critical rate of rise of on-state current (repetitive), (Note 4) 500 A/µs
cr
Critical rate of rise of on-state current (non-repetitive), (Note 4) 1000 A/µs
Peak reverse gate voltage 5 V
Mean forward gate power 1.5 W
Peak forward gate power 30 W
Operating temperature range -40 to +125 °C
Storage temperature range -40 to +150 °C
MAXIMUM
LIMITS
MAXIMUM
LIMITS
=55°C, (note 2) 128 A
case
=85°C, (note 2) 83 A
case
=25°C, (note 2) 260 A
case
=25°C 206 A
case
, (note 3) 1700 A
RRM
1950 A
, (note 3) 19000 A2s
RRM
13700 A
UNITS
UNITS
2
s
Notes:-
1) De-rating factor of 0.13% per °C is applicable for T
2) Single phase; 50Hz, 180° half-sinewave.
3) Half-sinewave, 125°C T
4) V
=67% V
D
Data Sheet. Type P0128SH10# to P0128SH12# Issue 1 Page 1 of 12 August, 2003
, IFG=2A, tr≤0.5µs, T
DRM
initial.
j
case
=125°C.
below 25°C.
j
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WESTCODE An IXYS Company Distributed Gate Thyristor types P0128SH10# to P0128SH12#
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Characteristics
PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS
V
TM
V
TM
V
T0
r
T
(dv/dt)crCritical rate of rise of off-state voltage 200 - - VD=80% V
I
DRM
I
RRM
V
GT
I
GT
V
GD
I
H
t
gd
t
gt
Q
rr
Q
ra
I
rm
t
rr
t
q
R
thJ-C
R
thJ-K
Maximum peak on-state voltage - - 2.30 ITM=280A V
Maximum peak on-state voltage - - 2.60 ITM=384A V
Threshold voltage - - 1.60 V
Slope resistance - - 2.49
, Linear ramp, Gate o/c
DRM
Peak off-state current - - 20 Rated V
Peak reverse current - - 20 Rated V
Gate trigger voltage - - 3.0 V
T
Gate trigger current - - 200
Gate non-trigger voltage - - 0.25 Rated V
DRM
RRM
=25°C VD=10V, IT=3A
j
DRM
mΩ
V/µs
mA
mA
mA
V
Holding current - - 600 Tj=25°C mA
Gate controlled turn-on delay time 0.4 1.0
Turn-on time - 0.8 2.0
=67% V
V
D
I
=2A, tr=0.5µs, Tj=25°C
FG
, ITM=500A, di/dt=10A/µs,
DRM
µs
Recovered charge - 50 - µC
Recovered charge, 50% Chord - 25 45 µC
Reverse recovery current - 15 - A
Reverse recovery time - 3.0 -
10 - 15
Turn-off time (note 2)
20 - 25
I
=100A, tp=500µs, di/dt=10A/µs, Vr=50V
TM
ITM=100A, tp=500µs, di/dt=10A/µs, Vr=50V,
V
=80%V
dr
, dVdr/dt=20V/µs
DRM
ITM=100A, tp=500µs, di/dt=10A/µs, Vr=50V,
V
=80%V
dr
, dVdr/dt=200V/µs
DRM
µs
µs
Thermal resistance, junction to case - - 0.23 DC K/W
Thermal resistance, case to heatsink - - 0.08 DC K/W
F Mounting torque 11.5 - 14.5 Nm
W
t
Weight - 130 - g
Notes:-
1) Unless otherwise indicated T
2) The required t
details of t
Data Sheet. Type P0128SH10# to P0128SH12# Issue 1 Page 2 of 12 August, 2003
(specified with dVdr/dt=200V/µs) is represented by a ‘#’ in the device part number. See ordering information for
q
codes.
q
=125°C.
j
WESTCODE
WESTCODE An IXYS Company Distributed Gate Thyristor types P0128SH10# to P0128SH12#
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Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
V
DRM VDSM VRRM
V
V
RSM
V
V
V
D
DC V
R
10 1000 1100 700
12 1200 1300 810
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
I
GM
4A/µs
I
G
t
p1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
(t
p1
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
magnitude in the order of 1.5 times I
should remain flowing for the same duration as the anode current and have a
G
GT
.
Data Sheet. Type P0128SH10# to P0128SH12# Issue 1 Page 3 of 12 August, 2003
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(
)
t
WESTCODE An IXYS Company Distributed Gate Thyristor types P0128SH10# to P0128SH12#
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9.0 Frequency Ratings
The curves illustrated in figures 11 to 16 are for guidance only and are superseded by the maximum
ratings shown on page 1.
10.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
11.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
12.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
) and for the off-state voltage to reach full value (tv), i.e.
(t
q
f
13.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Then the average dissipation will be:
14.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1
=
vqpulse ttt
++
be the Energy per pulse for a given current and pulse width, in joules
Let E
p
Let R
and T
be the steady-state d.c. thermal resistance (junction to sink)
th(J-Hs)
be the heat sink temperature.
SINK
.)(max
⋅−=⋅= 125
RWT and fEW
()
HsJthAVSINKPAV
−
Fig. 1
max
1
(ii) Qrr is based on a 150µs integration time i.e.
(iii)
=
FactorK =
150
s
µ
dtiQ
.
rrrr
∫
0
t
1
2
Data Sheet. Type P0128SH10# to P0128SH12# Issue 1 Page 4 of 12 August, 2003
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