Westcode Semiconductors K0890NC360, K0890NC400 Data Sheet

Date:- 4 Sep, 2002

WESTCODE

An IXYS Company

Medium Voltage Thyristor

Types K0890NC360 to K0890NC400

Old Type No.: R295CH36-40

Absolute Maximum Ratings

VOLTAGE RATINGS

V

DRM

V

DSM

V

RRM

V

RSM

I

T(AV)M

I

T(AV)M

I

T(AV)M

I

T(RMS)

I

T(d.c.)

I

TSM

I

TSM2

I2tI
I2t

(di/dt)

V

RGM

P

G(AV)

P

GM

T

j op

T

stg

Repetitive peak off-state voltage, (note 1) 3600-4000 V
Non-repetitive peak off-state voltage, (note 1) 3600-4000 V
Repetitive peak reverse voltage, (note 1) 3600-4000 V
Non-repetitive peak reverse voltage, (note 1) 3700-4100 V

OTHER RATINGS

Maximum average on-state current, T
Maximum average on-state current. T
Maximum average on-state current. T
Nominal RMS on-state current, T
D.C. on-state current, T

=25°C, (note 4) 1525 A

sink

Peak non-repetitive surge tp=10ms, Vrm=0.6V
Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5)

2

t capacity for fusing tp=10ms, Vrm=0.6V

2

I

t capacity for fusing tp=10ms, Vrm≤10V, (note 5)

Critical rate of rise of on-state current (repetitive), (Note 6) 500 A/µs

cr

Critical rate of rise of on-state current (non-repetitive), (Note 6) 1000 A/µs
Peak reverse gate voltage 5 V
Mean forward gate power 2 W
Peak forward gate power 30 W
Operating temperature range -40 to +125 °C
Storage temperature range -40 to +150 °C

sink

sink

sink

=25°C, (note 2) 1755 A

sink

Data Sheet Issue:- 1

MAXIMUM

LIMITS

MAXIMUM

LIMITS

=55°C, (note 2) 890 A
=85°C, (note 2) 610 A
=85°C, (note 3) 365 A

, (note 5) 10.9 kA

RRM

12 kA

720×10

3

3

, (note 5) 594×10

RRM

UNITS

UNITS

A2s
A2s

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T

6) V

=67% V

D

Data Sheet. Types K0890NC360 to K0890NC400 Issue 1 Page 1 of 11 September, 2002

, IFG=2A, tr≤0.5µs, T

DRM

initial.

j

case

=125°C.

below 25°C.

j

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Characteristics

PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS

V

TM

V

T0

r

T

(dv/dt)crCritical rate of rise of off-state voltage 1000 - - VD=80% V
I

DRM

I

RRM

V

tr

V

GT

I

GT

V

GD

I

H

t

gd

t

gt

Q

rr

Q

ra

I

rm

t

rr

t

q

R

thJK

Maximum peak on-state voltage - - 2.98 ITM=1830A V
Threshold voltage - - 1.516 V
Slope resistance - - 0.8

, linear ramp, gate o/c

DRM

Peak off-state current - - 100 Rated V
Peak reverse current - - 100 Rated V
On-state recovery voltage - 6.0 - IT=2500A, tp=10ms, T
Gate trigger voltage - - 3.0 V

T

Gate trigger current - - 300
Gate non-trigger voltage - - 0.25 Rated V

DRM

RRM

=25°C V

case

=25°C VD=10V, IT=3A

j

DRM

mΩ

V/µs

mA
mA

mA

V
Holding current - - 1000 Tj=25°C mA
Gate-controlled turn-on delay time - 0.5 1.0 µs
Turn-on time - 1.5 3.0

=67% V

V

D

I

=2A, tr=0.5µs, Tj=25°C

FG

, IT=1000A, di/dt=10A/µs,

DRM

µs
Recovered charge - 4000 - µC
Recovered charge, 50% Chord - 1500 1750 µC
Reverse recovery current - 100 - A
Reverse recovery time - 25 -

- 300 -

Turn-off time

- 500 -

Thermal resistance, junction to heatsink

- - 0.024 Double side cooled K/W

I

=1000A, tp=1000µs, di/dt=10A/µs,

TM

V

=50V

r

ITM=1000A, tp=1000µs, di/dt=10A/µs,
V

=50V, Vdr=80%V

r

, dVdr/dt=20V/µs

DRM

ITM=1000A, tp=1000µs, di/dt=10A/µs,
V

=50V, Vdr=80%V

r

, dVdr/dt=200V/µs

DRM

µs

µs

- - 0.048 Single side cooled K/W
F Mounting force 19 - 26 kN
W

Weight - 510 - g

t

Notes:-

1) Unless otherwise indicated T

Data Sheet. Types K0890NC360 to K0890NC400 Issue 1 Page 2 of 11 September, 2002

=125°C.

j

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Notes on Ratings and Characteristics

1.0 Voltage Grade Table

Voltage Grade

V

DRM VDSM VRRM

V

V

RSM

V

V

V

D

DC V

R

36 3600 3700 1900
38 3800 3850 1960
40 4000 4100 2000

2.0 Extension of Voltage Grades This report is applicable to other voltage grades when supply has been agreed by Sales/Production.

3.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.

4.0 Repetitive dv/dt Standard dv/dt is 1000V/µs.

5.0 Frequency Ratings The curves illustrated in figures 17 & 18 are for guidance only and are superseded by the maximum

ratings shown on page 1. For operation above line frequency, please consult the factory for assistance.

6.0 Snubber Components When selecting snubber components, care m ust be taken not to use ex cessively large values of snubber

capacitor or excessively sm all values of snubber re sistor. Such exc essive com ponent values may lead to
device damage due to the large resultant values of snubber disc harge current. If r equired, please consult
the factory for assistance.

7.0 Rate of rise of on-state current The maxim um un-primed rate of rise of on-s tate current must not exceed 1000A/µs at any time during

turn-on on a non-repetitive basis. For repetitive per formanc e, the on-state rate of rise of curr ent mus t not
exceed 500A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.

8.0 Square wave frequency ratings These ratings are given for load component rate of rise of on-state current of 50A/µs.

9.0 Duty cycle lines The 100% duty cycle is represented on the frequency ratings by a straight line. Other duties can be

included as parallel to the first.

Data Sheet. Types K0890NC360 to K0890NC400 Issue 1 Page 3 of 11 September, 2002

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10.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V

is assumed. This gate drive must be applied when using the full di/dt capability of the device.

I

GM

4A/µs

I

G

t

p1

The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its dur ation

) should be 20µs or sufficient to allow the anode current to reach ten tim es IL, whichever is greater.

(t

p1

Otherwise, an increase in pulse current c ould be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
magnitude in the order of 1.5 times I

11.0 Computer Modelling Parameters

11.1 Device Dissipation Calculations

I

=

AV

Where VT0=1.516V, rT=0.8mΩ,

should remain flowing for the same duration as the anode current and have a

G

2

4

00

2

⋅⋅

.

GT

T

AV

=

∆

R

th

max

TTT

−=∆

Hsj

WrffVV

⋅⋅⋅++−

AVTTT

rff

T

and:

W

R

= Supplementary thermal impedance, see table below and

th

ff = Form factor, see table below.

Supplementary Thermal Impedance

Conduction Angle 30° 60° 90° 120° 180° 270° d.c.

Square wave Double Side Cooled 0.0293 0.0285 0.0278 0.0271 0.0261 0.0249 0.024

Square wave Single Side Cooled 0.0534 0.053 0.0524 0.0518 0.0509 0.0497 0.048

Sine wave Double Side Cooled 0.0286 0.0276 0.0269 0.0263 0.0248

Sine wave Single Side Cooled 0.0531 0.0523 0.0517 0.0511 0.0497

Form Factors

Conduction Angle 30° 60° 90° 120° 180° 270° d.c.

Square wave 3.464 2.449 2 1.732 1.414 1.149 1

Sine wave 3.98 2.778 2.22 1.879 1.57

Data Sheet. Types K0890NC360 to K0890NC400 Issue 1 Page 4 of 11 September, 2002

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p

p

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11.2 Calculating VT using ABCD Coefficients

The on-state characteristic I
(i) the well established V
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V

terms of I

The constants, derived by curve fitting soft ware, are given below for both hot and c old c harac teris tic s. T he
resulting values for V
that plotted.

11.3 D.C. Thermal Impedance Calculation

given below:

T

T

A 0.78163983 A 0.66032723
B 0.4140327 B 0.169496
C 1.11101×10
D -0.0744794 D -0.01175336

vs. VT, on page 6 is represented in two ways;

T

and rT tangent used for rating purposes and

T0

()

agree with the true device characteristic over a current range, which is limited to

25°C Coefficients 125°C Coefficients

-3

∑

=

=

p

C 8.46556×10

np




−⋅=

err

1

pt



1



−

t



τ

p






IDICIBAV ⋅+⋅+⋅+= ln

TTTT

-4

T

in

Where p = 1 to n, n is the number of terms in the series and:

t = Duration of heating pulse in seconds.
r

= Thermal resistance at time t.

t

= Amplitude of pth term.

r

= Time Constant of rth term.

τ

The coefficients for this device are shown in the tables below:

D.C. Double Side Cooled

Term

r

p

τ

p

Term

r

p

τ

p

0.02919832 4.863568×10-33.744798×10-36.818034×10-32.183558×10-31.848294×10

12345

0.01249139 6.316833×10

0.8840810 0.1215195 0.03400152 6.742908×10

123456

6.298105 3.286174 0.5359179 0.1186897 0.02404574 3.379476×10

-3

D.C. Single Side Cooled

1.850855×10

-3

1.922045×10

-3

-3

6.135330×10

1.326292×10

-4

-3

-3

-3

Data Sheet. Types K0890NC360 to K0890NC400 Issue 1 Page 5 of 11 September, 2002

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Curves

Figure 1 - On-state characteristics of Limit device Figure 2 - Transient thermal impedance

(A)

T

10000

Tj = 25°C

Tj = 125°C

0.1

SSC 0.048K/W

DSC 0.024K/W

0.01

(K/W)

(th)t

1000

Instantaneous on-state current - I

K0890NC360-400

Issue 1

100

0246810

Instantaneous on-state voltage - V

(V)

T

0.001

Transient Thermal Impedance - Z

0.0001

K0890NC360-400

0.00001

0.0001 0.001 0.01 0.1 1 10 100

Time (s)

Issue 1

Figure 3 - Gate characteristics - Trigger limits Figure 4 - Gate characteristics - Power curves

6

K0890NC360-400

Tj=25°C

5

4

(V)

GT

IGT, V

Issue 1

Max VG dc

GT

20

K0890NC360-400

Tj=25°C

18

16

14

(V)

GT

12

Issue 1

Max VG dc

3

Gate Trigger Voltage - V

2

25°C

-10°C

125°C

1

IGD, V

GD

0

00.20.40.60.81

Gate Trigger Current - I

Data Sheet. Types K0890NC360 to K0890NC400 Issue 1 Page 6 of 11 September, 2002

-40°C

(A)

GT

Min VG dc

10

8

Gate Trigger Voltage - V

6

4

PG 2W dc

2

0

0246810

Gate Trigger Current - I

PG Max 30W dc

Min VG dc

(A)

GT

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Figure 5 - Total recovered charge, Q

10000

(µC)

rr

Total recovered charge - Q

1000

1 10 100 1000

Commutation rate - di/dt (A/µs)

rr

2000A
1500A
1000A

500A

Tj = 125°C

K0890NC360-400

Issue 1

Figure 6 - Recovered charge, Qra (50% chord)

10000

(µC)

ra

2000A
1500A
1000A

Recovered charge - Q

K0890NC360-400

1000

1101001000

Commutation rate - di/dt (A/µs)

500A

Tj = 125°C

Issue 1

Figure 7 - Peak reverse recovery current, I

10000

(A)

1000

rm

100

Reverse recovery current - I

Tj = 125°C

K0890NC360-400

Issue 1

10

1 10 100 1000

Commutation rate - di/dt (A/µs)

rm

2000A
1500A
1000A
500A

Figure 8 - Maximum recovery time, trr (50% chord)

100

(µs)

rr

10

2000A
1500A
1000A

500A

Reverse recovery time - t

Tj = 125°C

K0890NC360-400

1

1 10 100 1000

Commutation rate - di/dt (A/µs)

Issue 1

Data Sheet. Types K0890NC360 to K0890NC400 Issue 1 Page 7 of 11 September, 2002

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Figure 9 – On-state current vs. Power dissipation – Double Side Cooled (Sine wave)

4000

180°

3500

60°

30°

3000

2500

2000

1500

Maximum forward dissipation (W)

1000

500

0

0 200 400 600 800 1000 1200

Mean forward current (A) (Whole cycle averaged)

120°

90°

K0890NC360-400

Issue 1

Figure 10 – On-state current vs. Heatsink temperature - Double Side Cooled (Sine wave)

125

K0890NC360-400

Issue 1

100

75

50

Maximum permissable heatsink temperature (°C)

25

0

0 200 400 600 800 1000 1200

Mean forward current (A) (Whole cycle averaged)

30° 60° 90° 120° 180°

Figure 11 – On-state current vs. Power dissipation – Double Side Cooled (Square wave)

4000

3500

3000

d.c.

Issue 1

270°
180°
120°
90°

60°
30°

2500

2000

1500

Maximum forward dissipation (W)

1000

500

K0890NC360-400

0

0 500 1000 1500

Mean Forward Current (Amps) (Whole Cycle Averaged)

Figure 12 – On-state current vs. Heatsink temperature – Double Side Cooled (Square wave)

125

100

75

50

Maximum permissible heatsink temperature (°C)

25

0

0 500 1000 1500

Mean Forward Current (Amps) (Whole Cycle Averaged)

30° 60° 90°120° 180° d.c.270°

K0890NC360-400

Issue 1

Data Sheet. Types K0890NC360 to K0890NC400 Issue 1 Page 8 of 11 September, 2002

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Figure 13 – On-state current vs. Power dissipation – Single Side Cooled (Sine wave)

2000

1800

1600

1400

1200

1000

800

Maximum forward dissipation (W)

600

400

200

0

0 100 200 300 400 500 600 700

Mean forward current (A) (Whole cycle averaged)

30°

90°

60°

K0890NC360-400

120°

Issue 1

180°

Figure 14 – On-state current vs. Heatsink temperature – Single Side Cooled (Sine wave)

125

100

75

50

Maximum permissable heatsink temperature (°C)

25

0

0 100 200 300 400 500 600 700

Mean forward current (A) (Whole cycle averaged)

30° 60° 90° 120° 180°

K0890NC360-400

Issue 1

Figure 15 – On-state current vs. Power dissipation – Single Side Cooled (Square wave)

2000

1800

1600

1400

1200

d.c.

1000

800

Maximum forward dissipation (W)

600

400

200

0

0 200 400 600 800 1000

Mean Forward Current (Amps) (Whole Cycle Averaged)

270°
180°
120°
90°
60°
30°

K0890NC360-400

Issue 1

Figure 16 – On-state current vs. Heatsink temperature – Single Side Cooled (Square wave)

125

100

75

50

Maximum permissible heatsink temperature (°C)

25

0

0 200 400 600 800 1000

Mean Forward Current (Amps) (Whole Cycle Averaged)

30° 60° 90° 120° 180° d.c.270°

K0890NC360-400

Issue 1

Data Sheet. Types K0890NC360 to K0890NC400 Issue 1 Page 9 of 11 September, 2002

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Figure 17 – Square Wave Frequency Ratings Figure 18 – Sine Wave Frequency Ratings

1.00E+05

1.00E+04

1.00E+03

Frequency (Hz)

1.00E+02

500A

1kA

1.5kA

100% Duty Cycle

2kA

3kA

5kA

1.00E+05

1.00E+04

1.00E+03

Frequency (Hz)

500A

1kA

1.5kA

2kA

3kA

K0890NC360-400

100% Duty Cycle

Issue 1

THs=55°C

1.00E+01

THs=55°C
di/dt=50A/µs

K0890NC360-400

1.00E+00

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Issue 1

Pulse width (s)

Figure 19 - Maximum surge and I2t Ratings

Gate may temporarily lose control of conduction angle

100000

(A)

TSM

10000

1.00E+02

1.00E+01

5kA

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse Width (s)

1.00E+07

RRM

≤

10V

RRM

I2t: V

I2t: 60% V

1.00E+06

2

2

s)
t (A

Maximum I

Total peak half sine surge current - I

: V

RRM

≤

10V

RRM

I

I

TSM

TSM

: 60% V

Tj (initial) = 125°C

K0890NC360-400

Issue 1

1000

1.00E+05

135101 510 50100

Duration of surge (ms) Duration of surge (cycles @ 50Hz)

Data Sheet. Types K0890NC360 to K0890NC400 Issue 1 Page 10 of 11 September, 2002

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Outline Drawing & Ordering Information

ORDERING INFORMATION (Please quote 10 digit code as bel ow)





K0890 NC

Fixed

Type Code

Order code: K0890NC380 – 3800V V

IXYS Semiconductor GmbH

Edisonstraße 15
D-68623 Lampertheim
Tel: [phone]
Fax: [phone]
E-mail: [e-mail]

IXYS Corporation

3540 Bassett Street
Santa Clara CA 95054 USA
Tel: [phone]
Fax: [phone]
E-mail: [e-mail]

The information contained herein is confidential and is protected by Copyright. The information may not be used or
disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors
Ltd.

In the interest of product improvement, Westcode reserves the right to change specificati ons at any time without prior
notice.

Devices with a suffix code (2-letter or letter/digi t/l etter combination) added to thei r generi c code are not necessarily subject
to the conditions and limits contained in this report.

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An IXYS Company

Fixed

outline code

, 27.7mm clamp height capsule.

RRM

www.westcode.com

www.ixys.net



Voltage code

/100

V

DRM

36-40

0

Fixed turn-off

time code

Westcode Semiconductors Ltd

PO Box 57 Chippenham

Wiltshi re S N15 1J L

Tel: [phone]

Fax: [phone]

E-mail: WSL.sales@westcode,com

Westcode Semiconductors Inc

3270 Cherry Avenue

Long Beach CA 90807 USA

Tel: [phone]

Fax: [phone]

E-mail: [e-mail]

© Westcode Semiconductors Ltd.

Data Sheet. Types K0890NC360 to K0890NC400 Issue 1 Page 11 of 11 September, 2002