This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Frequency Ratings
The curves illustrated in figures 17 & 18 are for guidance only and are superseded by the maximum
ratings shown on page 1. For operation above line frequency, please consult the factory for assistance.
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 300A/µs at any time during turnon on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 150A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Square wave frequency ratings
These ratings are given for load component rate of rise of on-state current of 50A/µs.
9.0 Duty cycle lines
The 100% duty cycle is represented on the frequency ratings by a straight line. Other duties can be
included as parallel to the first.
Data Sheet. Types K0769NC600 to K0769NC650 Issue 1Page 3 of 11August, 2002
Page 4
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10.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
(t
p1
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
magnitude in the order of 1.5 times I
11.0 Computer Modelling Parameters
11.1 Device Dissipation Calculations
I
AV
Where V0=1.566V, rs=1.172m
R
= Supplementary thermal impedance, see table below and
th
ff
= Form factor, see table below.
=
An IXYS Company
I
GM
4A/µs
should remain flowing for the same duration as the anode current and have a
G
2
4
00
⋅⋅
2
rff
Ω,
Medium Voltage Thyristor Types K0769NC600 to K0769NC650
I
G
t
p1
.
GT
∆
T
AV
=
R
th
max
−=∆
TTT
Hsj
⋅⋅⋅++−
WrffVV
AVs
and:
s
W
Supplementary Thermal Impedance
Conduction Angle30°60°90°120°180°270°d.c.
Square wave Double Side Cooled0.02930.02850.02780.02710.02610.02490.024
Square wave Single Side Cooled0.05340.0530.05240.05180.05090.04970.048
Sine wave Double Side Cooled0.02860.02760.02690.02630.0248
Sine wave Single Side Cooled0.05310.05230.05170.05110.0497
Form Factors
Conduction Angle30°60°90°120°180°270°d.c.
Square wave3.4642.44921.7321.4141.1491
Sine wave3.982.7782.221.8791.57
Data Sheet. Types K0769NC600 to K0769NC650 Issue 1Page 4 of 11August, 2002
Page 5
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p
p
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11.2 Calculating VT using ABCD Coefficients
An IXYS Company
Medium Voltage Thyristor Types K0769NC600 to K0769NC650
The on-state characteristic I
(i) the well established V
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V
terms of I
The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The
resulting values for V
that plotted.
11.3 D.C. Thermal Impedance Calculation
given below:
T
T
A
B
C
D
vs. VT, on page 6 is represented in two ways;
T
and rs tangent used for rating purposes and
0
in
T
()
ln
agree with the true device characteristic over a current range, which is limited to
25°C Coefficients115°C Coefficients
3.3100044A0.7108278
-0.329322B0.1494583
7.352344×10
0.02672716D-3.287414×10
-4
=
∑
=
p
C1.110708×10
np
1
pt
1
−
τ
−⋅=
err
t
p
⋅+⋅+⋅+=
IDICIBAV
TTTT
-3
-3
Where
The coefficients for this device are shown in the tables below:
3540 Bassett Street
Santa Clara CA 95054 USA
Tel: +1 (408) 982 0700
Fax: +1 (408) 496 0670
E-mail: [email protected]
The information contained herein is confidential and is protected by Copyright. The i nformation may not be used or
disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors
Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior
notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject
to the conditions and limits contained in this report.