Vishay VS-ST280S Series Data Sheet
www.vishay.com
TO-209AB (TO-93)
PRODUCT SUMMARY
I
T(AV)
V
DRM/VRRM
V
TM
I
GT
T
J
Package TO-209AB (TO-93)
Diode variation Single SCR
Phase Control Thyristors
(Stud Version), 280 A
FEATURES
• Center amplifying gate
• International standard case TO-209AB (TO-93)
• Hermetic metal case with glass-metal seal
insulator
• Compression bonded encapsulation for heavy duty
operations such as severe thermal cycling
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
280 A
400 V, 600 V
1.28 V
150 mA
-40 °C to 125 °C
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
VS-ST280S Series
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
I
t
V
DRM/VRRM
t
q
T
J
T
C
50 Hz 7850
60 Hz 8220
50 Hz 308
60 Hz 281
Typical 100 μs
280 A
85 °C
440
400/600 V
-40 to 125 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST280S
V
VOLTAGE
CODE
04 400 500
06 600 700
DRM/VRRM
PEAK AND OFF-STATE VOLTAGE
, MAXIMUM REPETITIVE
NON-REPETITIVE PEAK VOLTAGE
V
V
, MAXIMUM
RSM
I
DRM/IRRM
T
= TJ MAXIMUM mA
V
J
A
kA2s
MAXIMUM AT
30
Revision: 11-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94402
VS-ST280S Series
www.vishay.com
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
Maximum RMS on-state current I
T(RMS)
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 3100 kA2s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of on-state slope resistance r
High level value of on-state slope resistance r
Maximum on-state voltage V
Maximum holding current I
Maximum (typical) latching current I
I
T(AV)
I
TSM
T(TO)1
T(TO)2
t1
t2
TM
H
L
180° conduction, half sine wave 280 A
DC at 75 °C case temperature 440
t = 10 ms
t = 8.3 ms 8220
t = 10 ms
t = 8.3 ms 6900
t = 10 ms
t = 8.3 ms 220
t = 10 ms
t = 8.3 ms 200
(16.7 % x x I
(I > x I
(16.7 % x x I
(I > x I
No voltage
reapplied
100 % V
reapplied
RRM
No voltage
reapplied
100 % V
reapplied
), TJ = TJ maximum 0.88
T(AV)
), TJ = TJ maximum 0.47
T(AV)
T(AV)
T(AV)
RRM
< I < x I
< I < x I
Ipk = 880 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.28 V
TJ = 25 °C, anode supply 12 V resistive load
Vishay Semiconductors
Sinusoidal half wave,
initial T
= TJ maximum
J
), TJ = TJ maximum 0.84
T(AV)
), TJ = TJ maximum 0.50
T(AV)
1000 (300)
85 °C
7850
6600
310
218
600
A
kA2s
V
m
mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time t
Typical turn-off time t
dI/dt
d
q
Gate drive 20 V, 20 , t
T
= TJ maximum, anode voltage 80 % V
J
Gate current 1 A, dIg/dt = 1 A/μs
V
= 0.67 % V
d
DRM
ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/μs,
V
= 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs
R
1 μs
r
, TJ = 25 °C
DRM
1000 A/μs
1.0
μs
100
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES
Maximum critical rate of rise
of off-state voltage
Maximum peak reverse and
off-state leakage current
dV/dt T
I
RRM,
I
DRM
= TJ maximum linear to 80 % rated V
J
TJ = TJ maximum, rated V
DRM/VRRM
DRM
500 V/μs
applied 30 mA
UNIT
S
Revision: 11-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94402
VS-ST280S Series
www.vishay.com
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage + V
Maximum peak negative gate voltage - V
DC gate current required to trigger I
DC gate voltage required to trigger V
GM
G(AV)
GM
GM
GM
GT
GT
TJ = TJ maximum, tp 5 ms 10.0
TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
TJ = TJ maximum, tp 5 ms 3.0 A
TJ = TJ maximum, tp 5 ms
TJ = - 40 °C
= 25 °C 90 150
J
= 125 °C 40 -
T
J
TJ = - 40 °C 2.9 -
= 25 °C 1.8 3.0
J
T
= 125 °C 1.2 -
J
Maximum required gate trigger/current/
voltage are the lowest value which will
trigger all units 12 V anode to cathode
applied
Vishay Semiconductors
VALUES
TYP. MAX.
180 -
20
5.0
UNIT
S
W
V
mAT
VT
DC gate current not to trigger I
DC gate voltage not to trigger V
GD
GD
TJ = TJ maximum
Maximum gate current/voltage not to
trigger is the maximum value which will
not trigger any unit with rated V
anode to cathode applied
DRM
10 mA
0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance, junction to case R
Maximum thermal resistance, case to heatsink R
Mounting torque, ± 10 %
J
Stg
thJC
thCS
DC operation 0.105
Mounting surface, smooth, flat and greased 0.04
Non-lubricated threads 31 (275)
Lubricated threads 24.5 (210)
Approximate weight 280 g
Case style See dimensions - link at the end of datasheet TO-209AB (TO-93)
R
CONDUCTION
thJC
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.016 0.012
120° 0.019 0.020
T
90° 0.025 0.027
= TJ maximum K/W
J
60° 0.036 0.037
30° 0.060 0.060
Note
• The table above shows the increment of thermal resistance R
when devices operate at different conduction angles than DC
thJC
-40 to 125
-40 to 150
(lbf · in)
°C
K/W
N · m
Revision: 11-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94402
Loading...