Vishay VS-ST223C..C Series Data Sheet
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TO-200AB (A-PUK)
PRODUCT SUMMARY
Package TO-200AB (A-PUK)
Diode variation Single SCR
I
T(AV)
V
DRM/VRRM
V
TM
I
at 50 Hz 5260 A
TSM
I
at 60 Hz 5510 A
TSM
I
GT
T
C/Ths
VS-ST223C..C Series
Inverter Grade Thyristors
(Hockey PUK Version), 390 A
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• International standard case TO-200AB (A-PUK)
• Guaranteed high dI/dt
• High surge current capability
• Low thermal impedance
• High speed performance
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
•Inverters
390 A
400 V, 800 V
1.58 V
200 mA
55 °C
• Choppers
• Induction heating
• All types of force-commutated converters
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
t
I
V
DRM/VRRM
t
Range 10 to 30 μs
q
T
J
T
hs
T
hs
50 Hz 5850
60 Hz 6130
50 Hz 171
60 Hz 156
390 A
55 °C
745 A
25 °C
400 to 800 V
- 40 to 125 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
TYPE NUMBER
VS-ST223C..C
Revision: 03-Dec-13
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VOLTAGE
CODE
04 400 500
08 800 900
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DRM/VRRM
REPETITIVE PEAK VOLTAGE
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
1
V
, MAXIMUM
RSM
V
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I
DRM/IRRM
AT T
= TJ MAXIMUM
J
Document Number: 93672
A
kA2s
MAXIMUM
mA
40
VS-ST223C..C Series
180° el
I
TM
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CURRENT CARRYING CAPABILITY
I
FREQUENCY UNITS
180° el
TM
50 Hz 930 800 1430 1220 5870 5240
400 Hz 910 770 1490 1300 3120 2740
1000 Hz 780 650 1430 1260 1880 1640
2500 Hz 490 400 1070 920 1000 860
Recovery voltage V
r
Voltage before turn-on V
d
50 50 50
V
DRM
V
DRM
Rise of on-state current dI/dt 50 - - A/μs
Heatsink temperature 405540554055°C
Equivalent values for RC circuit 47/0.22 47/0.22 47/0.22 μF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current I
T(RMS)
Maximum peak, one half cycle,
non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 1710 kA2s
Maximum peak on-state voltage V
High level value of threshold voltage V
Low level value of forward slope resistance r
High level value of forward slope
resistance
Maximum holding current I
Typical latching current I
I
T(AV)
I
TSM
TM
T(TO)1
T(TO)2
t1
r
t2
H
L
180° conduction, half sine wave
Double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled 745
t = 10 ms
t = 8.3 ms 6130
t = 10 ms
t = 8.3 ms 5150
t = 10 ms
t = 8.3 ms 156
t = 10 ms
t = 8.3 ms 110
No voltage
reapplied
100 % V
reapplied
RRM
No voltage
reapplied
100 % V
reapplied
RRM
ITM = 600 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 1.58
(16.7 % x x I
(I > x I
T(AV)
(16.7 % x x I
(I > x I
T(AV)
< I < x I
T(AV)
T(AV)
), TJ = TJ maximum 1.09
< I < x I
T(AV)
T(AV)
), TJ = TJ maximum 0.82
TJ = 25 °C, IT > 30 A 600
TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A 1000
Vishay Semiconductors
I
TM
100 µs
V
DRM
390 (150) A
55 (85) °C
5850
4920
Sinusoidal half wave,
initial T
= TJ maximum
J
), TJ = TJ maximum 1.05
), TJ = TJ maximum 0.88
171
121
kA
m
mA
A
V
A
2
s
VLow level value of threshold voltage V
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS
Maximum non-repetitive rate
of rise of turned on current
Typical delay time t
dI/dt T
d
= TJ maximum, V
J
TJ = 25 °C, VDM = Rated V
Resistive load, gate pulse: 10 V, 5 source
= Rated V
DRM
, ITM = 2 x dI/dt 1000 A/μs
DRM
, ITM = 50 A DC, tp = 1 μs
DRM
TJ = TJ maximum,
I
Maximum turn-off time t
q
Revision: 03-Dec-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
= 300 A, commutating dI/dt = 20 A/μs
TM
V
= 50 V, tp = 500 μs, dV/dt: See table in device code
R
2
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VALUES
MIN. MAX.
0.78
10 30
Document Number: 93672
UNITS
μs
VS-ST223C..C Series
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BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
= TJ maximum, linear to 80 % V
T
Maximum critical rate of rise of off-state voltage dV/dt
Maximum peak reverse and off-state leakage
current
I
RRM
I
DRM
,
J
higher value available on request
TJ = TJ maximum, rated V
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage + V
Maximum peak negative gate voltage - V
Maximum DC gate current required to trigger I
Maximum DC gate voltage required to trigger V
Maximum DC gate current not to trigger I
Maximum DC gate voltage not to trigger V
GM
G(AV)
GM
GM
GM
GT
GT
GD
GD
TJ = TJ maximum, f = 50 Hz, d% = 50
TJ = TJ maximum, tp 5 ms
TJ = 25 °C, VA = 12 V, Ra = 6
TJ = TJ maximum, rated V
Vishay Semiconductors
,
DRM/VRRM
applied
DRM
DRM
applied 40 mA
500 V/μs
60
10
10 A
20
5
200 mA
3V
20 mA
0.25 V
W
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating temperature range T
Maximum storage temperature range T
Maximum thermal resistance, junction to heatsink R
Maximum thermal resistance, case to heatsink R
J
Stg
thJ-hs
thC-hs
DC operation single side cooled 0.17
DC operation double side cooled 0.08
DC operation single side cooled 0.033
DC operation double side cooled 0.017
Mounting force, ± 10 %
Approximate weight 50 g
Case style See dimensions - link at the end of datasheet TO-200AB (A-PUK)
R
CONDUCTION
thJ-hs
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
Single Side Double Side Single Side Double Side
TEST CONDITIONS UNITS
180° 0.015 0.017 0.011 0.011
120° 0.019 0.019 0.019 0.019
90° 0.024 0.024 0.026 0.026
T
60° 0.035 0.035 0.036 0.037
30° 0.060 0.060 0.060 0.061
Note
• The table above shows the increment of thermal resistance R
when devices operate at different conduction angles than DC
thJ-hs
- 40 to 125
- 40 to 150
4900
(500)
= TJ maximum K/W
J
°C
K/W
N
(kg)
Revision: 03-Dec-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
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Document Number: 93672
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