Vishay VS-ST203C Series Data Sheet
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TO-200AB (A-PUK)
PRODUCT SUMMARY
Package TO-200AB (A-PUK)
Diode variation Single SCR
I
T(AV)
V
DRM/VRRM
V
TM
I
at 50 Hz 5260 A
TSM
I
at 60 Hz 5510 A
TSM
I
GT
T
C/Ths
Inverter Grade Thyristors
(Hockey PUK Version), 370 A
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• International standard case TO-200AB (A-PUK)
• Guaranteed high dI/dt
• High surge current capability
• Low thermal impedance
• High speed performance
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
370 A
1000 V, 1200 V
1.72 V
200 mA
55 °C
TYPICAL APPLICATIONS
•Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
VS-ST203C Series
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
t
I
V
DRM/VRRM
t
Range 20 to 30 μs
q
T
J
T
hs
T
hs
50 Hz 5260
60 Hz 5510
50 Hz 138
60 Hz 126
370 A
55 °C
700 A
25 °C
A
kA2s
1000 to 1200 V
-40 to 125 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
TYPE NUMBER
VS-ST203C..C
Revision: 16-Dec-13
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VOLTAGE
CODE
10 1000 1100
12 1200 1300
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DRM/VRRM
REPETITIVE PEAK VOLTAGE
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
1
V
, MAXIMUM
RSM
V
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I
DRM/IRRM
AT T
Document Number: 94370
MAXIMUM
= TJ MAXIMUM
J
mA
40
VS-ST203C Series
180° el
I
TM
180° el
I
TM
100 µs
I
TM
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CURRENT CARRYING CAPABILITY
FREQUENCY UNITS
50 Hz 860 750 1340 1160 5620 5020
400 Hz 840 706 1400 1220 2940 2590
1000 Hz 700 580 1350 1170 1750 1520
2500 Hz 430 340 980 830 910 780
Recovery voltage V
r
Voltage before turn-on V
d
50 50 50
V
DRM
V
DRM
Rise of on-state current dI/dt 50 - - A/μs
Heatsink temperature 405540554055°C
Equivalent values for RC circuit 47/0.22 47/0.22 47/0.22 μF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current I
T(RMS)
Maximum peak, one half cycle,
non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 1380 kA2s
Maximum peak on-state voltage V
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of forward slope resistance r
High level value of forward slope
resistance
Maximum holding current I
Typical latching current I
I
T(AV)
I
TSM
TM
T(TO)1
T(TO)2
t1
r
t2
H
L
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled 700
t = 10 ms
t = 8.3 ms 5510
t = 10 ms
t = 8.3 ms 4630
t = 10 ms
t = 8.3 ms 126
t = 10 ms
t = 8.3 ms 89
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Sinusoidal half wave,
initial T
ITM = 600 A, TJ = TJ maximum,
t
= 10 ms sine wave pulse
p
(16.7 % x x I
(I > x I
T(AV)
(16.7 % x x I
(I > x I
T(AV)
< I < x I
T(AV)
T(AV)
), TJ = TJ maximum 1.22
< I < x I
T(AV)
T(AV)
), TJ = TJ maximum 0.83
TJ = 25 °C, IT > 30 A 600
TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A 1000
Vishay Semiconductors
V
DRM
370 (140) A
55 (85) °C
5260
4420
= TJ maximum
J
), TJ = TJ maximum 1.17
), TJ = TJ maximum 0.92
138
98
1.72
A
V
A
kA2s
V
m
mA
Revision: 16-Dec-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94370
VS-ST203C Series
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SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise
of turned on current
Typical delay time t
minimum
Maximum turn-off time
maximum 30
dI/dt
d
t
q
= TJ maximum, V
T
J
I
= 2 x dI/dt
TM
TJ = 25 °C, VDM = Rated V
Resistive load, gate pulse: 10 V, 5 source
TJ = TJ maximum,
I
= 300 A, commutating dI/dt = 20 A/μs
TM
V
= 50 V, tp = 500 μs, dV/dt: See table in device code
R
= Rated V
DRM
, ITM = 50 A DC, tp = 1 μs
DRM
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
= TJ maximum, linear to 80 % V
T
Maximum critical rate of rise of off-state voltage dV/dt
I
Maximum peak reverse and off-state leakage current
RRM
I
DRM
J
higher value available on request
,
TJ = TJ maximum, rated V
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage + V
Maximum peak negative gate voltage - V
Maximum DC gate currrent required to trigger I
Maximum DC gate voltage required to trigger V
Maximum DC gate current not to trigger I
Maximum DC gate voltage not to trigger V
GM
G(AV)
GM
GM
GT
GT
GD
GD
TJ = TJ maximum, f = 50 Hz, d % = 50
TJ = TJ maximum, tp 5 ms
GM
TJ = 25 °C, VA = 12 V, Ra = 6
TJ = TJ maximum, rated V
Vishay Semiconductors
DRM
DRM/VRRM
applied
DRM
,
DRM
applied 40 mA
1000 A/μs
0.8
20
500 V/μs
60
10
10 A
20
200 mA
20 mA
0.25 V
μs
W
5
V
3V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance, junction to heatsink R
Maximum thermal resistance, case to heatsink R
J
Stg
thJ-hs
thC-hs
DC operation single side cooled 0.17
DC operation double side cooled 0.08
DC operation single side cooled 0.033
DC operation double side cooled 0.017
Mounting force, ± 10 %
Approximate weight 50 g
Case style See dimensions - link at the end of datasheet TO-200AB (A-PUK)
Revision: 16-Dec-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
- 40 to 125
- 40 to 150
4900
(500)
Document Number: 94370
°C
K/W
N
(kg)
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