Vishay VS-ST183SP Series Data Sheet
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TO-209AB (TO-93)
PRODUCT SUMMARY
I
T(AV)
V
DRM/VRRM
V
TM
at 50 Hz 4900 A
I
TSM
at 60 Hz 5130 A
I
TSM
I
GT
T
J
Package TO-209AB (TO-93)
Diode variation Single SCR
Inverter Grade Thyristors
(Stud Version), 195 A
FEATURES
• Center amplifying gate
• High surge current capability
• Low thermal impedance
• High speed performance
• Compression bonding
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
195 A
400 V, 800 V
1.80 V
200 mA
-40 °C to 125 °C
TYPICAL APPLICATIONS
•Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
VS-ST183SP Series
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
I
t
V
DRM/VRRM
t
q
T
J
T
C
50 Hz 4900
60 Hz 5130
50 Hz 120
60 Hz 110
195 A
85 °C
306
400 to 800 V
15 to 20 μs
-40 to 125 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST183S
V
VOLTAGE
CODE
04 400 500
08 800 900
DRM/VRRM
REPETITIVE PEAK VOLTAGE
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
V
RSM
, MAXIMUM
V
I
DRM/IRRM
AT T
= TJ MAXIMUM
J
A
kA2s
MAXIMUM
mA
40
Revision: 11-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
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Document Number: 94369
VS-ST183SP Series
100 µs
I
TM
www.vishay.com
CURRENT CARRYING CAPABILITY
I
FREQUENCY UNITS
180° el
TM
180° el
50 Hz 570 370 900 610 7040 5220
400 Hz 560 360 940 630 3200 2280
1000 Hz 500 300 925 610 1780 1200
2500 Hz 340 190 760 490 880 560
Recovery voltage V
r
Voltage before turn-on V
d
50 50 50
V
DRM
V
DRM
Rise of on-state current dI/dt 50 - - A/μs
Case temperature 608560856085°C
Equivalent values for RC circuit 47/0.22 47/0.22 47/0.22 /μF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
Maximum RMS on-state current I
Maximum peak, one half cycle,
non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 1200 kA2s
Maximum peak on-state voltage V
High level value of threshold voltage V
Low level value of forward slope resistance r
High level value of forward slope
resistance
Maximum holding current I
Typical latching current I
I
T(AV)
T(RMS)
I
TSM
T(TO)1
T(TO)2
r
180° conduction, half sine wave
DC at 74 °C case temperature 306
t = 10 ms
t = 8.3 ms 5130
t = 10 ms
t = 8.3 ms 4310
t = 10 ms
t = 8.3 ms 110
t = 10 ms
t = 8.3 ms 78
ITM = 600 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 1.80
TM
(16.7 % x x I
(I > x I
(16.7 % x x I
t1
(I > x I
t2
TJ = 25 °C, IT > 30 A 600
H
TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A 1000
L
No voltage
reapplied
100 % V
reapplied
No voltage
RRM
Sinusoidal half wave,
initial T
reapplied
100 % V
reapplied
T(AV)
), TJ = TJ maximum 1.45
T(AV)
T(AV)
), TJ = TJ maximum 0.58
T(AV)
RRM
< I < x I
< I < x I
), TJ = TJ maximum 1.40
T(AV)
), TJ = TJ maximum 0.67
T(AV)
Vishay Semiconductors
I
TM
V
DRM
195 A
85 °C
4900
4120
= TJ maximum
J
120
85
A
V
A
kA2s
VLow level value of threshold voltage V
m
mA
Revision: 11-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94369
VS-ST183SP Series
www.vishay.com
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time t
minimum
Maximum turn-off time
maximum 20
dI/dt
d
t
q
T
= TJ maximum, V
J
I
= 2 x dI/dt
TM
TJ = 25 °C, VDM = Rated V
Resistive load, gate pulse: 10 V, 5 source
= Rated V
DRM
DRM
, ITM = 50 A DC, tp = 1 μs
DRM
TJ = TJ maximum,
I
= 300 A, commutating dI/dt = 20 A/μs
TM
V
= 50 V, tp = 500 μs, dV/dt: 200 V/μs
R
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
T
= TJ maximum, linear to 80 % V
Maximum critical rate of rise of off-state voltage dV/dt
I
Maximum peak reverse and off-state leakage current
RRM
I
DRM
J
higher value available on request
,
TJ = TJ maximum, rated V
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage + V
Maximum peak negative gate voltage - V
Maximum DC gate currrent required to trigger I
Maximum DC gate voltage required to trigger V
Maximum DC gate current not to trigger I
Maximum DC gate voltage not to trigger V
GM
G(AV)
GM
GM
GM
GT
GT
GD
GD
TJ = TJ maximum, f = 50 Hz, d% = 50
TJ = TJ maximum, tp 5 ms
TJ = TJ maximum VA = 12 V, Ra = 6
TJ = TJ maximum, rated V
Vishay Semiconductors
DRM/VRRM
applied
DRM
,
DRM
applied 40 mA
1000 A/μs
1.1
15
500 V/μs
60
10
10 A
20
5
200 mA
3V
20 mA
0.25 V
μs
W
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating temperature range T
Maximum storage temperature range T
Maximum thermal resistance, junction to case R
Maximum thermal resistance, case to heatsink R
Mounting torque, ± 10 %
J
Stg
thJC
thCS
DC operation 0.105
Mounting surface, smooth, flat and greased 0.04
Non-lubricated threads 31 (275)
Lubricated threads 24.5 (210)
Approximate weight 280 g
Case style See dimensions - link at the end of datasheet TO-209AB (TO-93)
R
CONDUCTION
thJC
CONDUCTION ANGLE
SINUSOIDAL
CONDUCTION
RECTANGULAR
CONDUCTION
TEST CONDITIONS UNITS
180° 0.016 0.012
120° 0.019 0.020
T
90° 0.025 0.027
= TJ maximum K/W
J
60° 0.036 0.037
30° 0.060 0.060
Note
• The table above shows the increment of thermal resistance R
Revision: 11-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
when devices operate at different conduction angles than DC
thJC
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
-40 to 125
-40 to 150
(lbf · in)
Document Number: 94369
°C
K/W
N · m
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