Vishay VS-ST183C Series Data Sheet
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TO-200AB (A-PUK)
PRODUCT SUMMARY
Package TO-200AB (A-PUK)
Diode variation Single SCR
I
T(AV)
V
DRM/VRRM
V
TM
I
at 50 Hz 4900 A
TSM
I
at 60 Hz 5130 A
TSM
I
GT
T
C/Ths
Inverter Grade Thyristors
(Hockey PUK Version), 370 A
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• International standard case TO-200AB (A-PUK)
• Guaranteed high dV/dt
• Guaranteed high dI/dt
• High surge current capability
• Low thermal impedance
• High speed performance
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
370 A
400 V, 800 V
1.80 V
200 mA
55 °C
•Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
VS-ST183C Series
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
t
I
V
DRM/VRRM
t
q
T
J
T
hs
T
hs
50 Hz 4900
60 Hz 5130
50 Hz 120
60 Hz 110
Range 10 to 20 μs
370 A
55 °C
690 A
25 °C
400 to 800 V
-40 to 125 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST183C..C
V
VOLTAGE
CODE
04 400 500
08 800 900
DRM/VRRM
REPETITIVE PEAK VOLTAGE
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
V
RSM
, MAXIMUM
V
I
DRM/IRRM
AT T
= TJ MAXIMUM
J
A
kA2s
MAXIMUM
mA
40
Revision: 17-Dec-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 94368
VS-ST183C Series
180° el
I
TM
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CURRENT CARRYING CAPABILITY
I
FREQUENCY UNITS
180° el
TM
50 Hz 770 660 1220 1160 5450 4960
400 Hz 730 600 1270 1090 2760 2420
1000 Hz 600 490 1210 1040 1600 1370
2500 Hz 350 270 860 730 800 680
Recovery voltage V
r
Voltage before turn-on V
d
50 50 50
V
DRM
V
DRM
Rise of on-state current dI/dt 50 - - A/μs
Heatsink temperature 405540554055°C
Equivalent values for RC circuit 47/0.22 47/0.22 47/0.22 μF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current I
Maximum peak, one half cycle,
non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 1200 kA2s
Maximum peak on-state voltage V
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of forward slope resistance r
High level value of forward slope
resistance
Maximum holding current I
Typical latching current I
I
T(AV)
T(RMS)
I
TSM
TM
T(TO)1
T(TO)2
t1
r
t2
H
L
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled 690
t = 10 ms
t = 8.3 ms 5130
t = 10 ms
t = 8.3 ms 4310
t = 10 ms
t = 8.3 ms 110
t = 10 ms
t = 8.3 ms 78
No voltage
reapplied
100 % V
reapplied
RRM
No voltage
reapplied
100 % V
reapplied
RRM
Sinusoidal half wave,
initial T
ITM = 600 A, TJ = TJ maximum,
t
= 10 ms sine wave pulse
p
(16.7 % x x I
(I > x I
T(AV)
(16.7 % x x I
(I > x I
T(AV)
< I < x I
T(AV)
T(AV)
), TJ = TJ maximum 1.45
< I < x I
T(AV)
T(AV)
), TJ = TJ maximum 0.58
TJ = 25 °C, IT > 30 A 600
TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A 1000
Vishay Semiconductors
I
TM
100 µs
V
DRM
370 (130) A
55 (85) °C
4900
4120
= TJ maximum
J
), TJ = TJ maximum 1.40
), TJ = TJ maximum 0.67
120
85
1.80
A
V
A
kA2s
V
m
mA
Revision: 17-Dec-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94368
VS-ST183C Series
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SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise
of turned on current
Typical delay time t
minimum
Maximum turn-off time
maximum 20
dI/dt
d
t
q
= TJ maximum, V
T
J
I
= 2 x dI/dt
TM
TJ = 25 °C, VDM = Rated V
Resistive load, gate pulse: 10 V, 5 source
TJ = TJ maximum,
I
= 300 A, commutating dI/dt = 20 A/μs
TM
V
= 50 V, tp = 500 μs, dV/dt: See table in device code
R
= Rated V
DRM
, ITM = 50 A DC, tp = 1 μs
DRM
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
= TJ maximum, linear to 80 % V
T
Maximum critical rate of rise of off-state voltage dV/dt
I
Maximum peak reverse and off-state leakage current
RRM
I
DRM
,
J
higher value available on request
TJ = TJ maximum, rated V
Vishay Semiconductors
DRM
DRM/VRRM
,
DRM
applied 40 mA
1000 A/μs
500 V/μs
1.1
10
μs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage + V
Maximum peak negative gate voltage - V
Maximum DC gate currrent required to trigger I
Maximum DC gate voltage required to trigger V
Maximum DC gate current not to trigger I
Maximum DC gate voltage not to trigger V
GM
G(AV)
GM
GM
GM
GT
GT
GD
GD
TJ = TJ maximum, f = 50 Hz, d% = 50
TJ = TJ maximum, tp 5 ms
TJ = 25 °C, VA = 12 V, Ra = 6
TJ = TJ maximum, rated V
DRM
applied
60
10
W
10 A
20
5
V
200 mA
3V
20 mA
0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance, junction to heatsink R
Maximum thermal resistance, case to heatsink R
J
Stg
thJ-hs
thC-hs
DC operation single side cooled 0.17
DC operation double side cooled 0.08
DC operation single side cooled 0.033
DC operation double side cooled 0.017
Mounting force, ± 10 %
Approximate weight 50 g
Case style See dimensions - link at the end of datasheet TO-200AB (A-PUK)
- 40 to 125
- 40 to 150
4900
(500)
°C
K/W
N
(kg)
Revision: 17-Dec-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94368
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