Vishay VS-ST180C Series Data Sheet

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TO-200AB (A-PUK)

PRODUCT SUMMARY

Package TO-200AB (A-PUK)

Diode variation Single SCR

I

T(AV)

V

DRM/VRRM

V

TM

I

GT

T

J

Phase Control Thyristors

(Hockey PUK Version), 350 A

FEATURES

• Center amplifying gate

• Metal case with ceramic insulator

• International standard case TO-200AB (A-PUK)

• Designed and qualified for industrial level

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

• DC motor controls

• Controlled DC power supplies

• AC controllers






350 A

400 V to 2000 V

1.96 V

150 mA

-40 °C to 125 °C







VS-ST180C Series

Vishay Semiconductors

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

t

I

V

DRM/VRRM

t

q

T

J

T

hs

T

hs

50 Hz 5000

60 Hz 5230

50 Hz 125

60 Hz 114

Typical 100 μs

350 A

55 °C

660 A

25 °C

400 to 2000 V

-40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

VS-ST180C..C

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V

VOLTAGE

CODE

04 400 500

08 800 900

12 1200 1300

16 1600 1700

18 1800 1900

20 2000 2100

DRM/VRRM

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

, MAXIMUM REPETITIVE PEAK

AND OFF-STATE VOLTAGE

V

NON-REPETITIVE PEAK VOLTAGE

1

V

, MAXIMUM

RSM

V

, [e-mail], [e-mail]

I

AT T

Document Number: 94396

A

kA2s

DRM/IRRM

MAXIMUM

= TJ MAXIMUM

J

mA

30

VS-ST180C Series

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ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at heatsink temperature

Maximum RMS on-state current I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 1250 kA2s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Maximum (typical) latching current I

I

T(AV)

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

180° conduction, half sine wave
double side (single side) cooled

DC at 25 °C heatsink temperature double side cooled 660

t = 10 ms

t = 8.3 ms 5230

t = 10 ms

t = 8.3 ms 4400

t = 10 ms

t = 8.3 ms 114

t = 10 ms

t = 8.3 ms 81

(16.7 % x  x I
(I >  x I
(16.7 % x  x I
(I >  x I

No voltage
reapplied

100 % V
reapplied

RRM

No voltage
reapplied

100 % V
reapplied

), TJ = TJ maximum 1.14

T(AV)

), TJ = TJ maximum 1.14

T(AV)

T(AV)

T(AV)

RRM

< I <  x I

< I <  x I

Ipk = 750 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.96 V

TJ = 25 °C, anode supply 12 V resistive load

Vishay Semiconductors

350 (140) A

55 (85) °C

Sinusoidal half wave,
initial T

= TJ maximum

J

), TJ = TJ maximum 1.08

T(AV)

), TJ = TJ maximum 1.18

T(AV)

1000 (300)

5000

4200

125

88

600

A

kA2s

V

m

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 , t
T

= TJ maximum, anode voltage  80 % V

J

Gate current 1 A, dIg/dt = 1 A/μs
V

= 0.67 % V

d

DRM

ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/μs, 
V

= 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs

R

 1 μs

r

, TJ = 25 °C

DRM

1000 A/μs

1.0
μs

100

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES

Maximum critical rate of rise of 
off-state voltage

Maximum peak reverse and 
off-state leakage current

dV/dt T

I

,

RRM

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum, rated V

DRM/VRRM

DRM

500 V/μs

applied 30 mA

UNIT

S

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VS-ST180C Series

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TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GM

G(AV)

GM

GM

GM

GT

GT

GD

GD

TJ = TJ maximum, tp  5 ms 10

TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

TJ = TJ maximum, tp  5 ms

TJ = - 40 °C

= 25 °C 90 150

J

= 125 °C 40 -

T

J

TJ = - 40 °C 2.9 -

= 25 °C 1.8 3.0

J

T

= 125 °C 1.2 -

J

Maximum required gate trigger/
current/voltage are the lowest value
which will trigger all units 12 V
anode to cathode applied

Maximum gate current/voltage not
to trigger is the maximum value

TJ = TJ maximum

which will not trigger any unit with
rated V

DRM

applied

Vishay Semiconductors

VALUES

typ. max.

180 -

anode to cathode

0.25 V

3.0 A

20

5.0

10 mA

UNIT

S

W

V

mAT

VT

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES

Maximum operating junction 
temperature range

Maximum storage temperature range T

Maximum thermal resistance,
junction to heatsink

Maximum thermal resistance,
case to heatsink

Mounting force, ± 10 %

R

R

T

J

Stg

thJ-hs

thC-hs

-40 to 125

-40 to 150

DC operation single side cooled 0.17

DC operation double side cooled 0.08

DC operation single side cooled 0.033

DC operation double side cooled 0.017

4900
(500)

Approximate weight 50 g

Case style See dimensions - link at the end of datasheet TO-200AB (A-PUK)

UNIT

S

°C

K/W

N

(kg)

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VS-ST180C Series

Vishay Semiconductors

R

CONDUCTION

thJC

SINUSOIDAL

CONDUCTION ANGLE

CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

180° 0.015 0.015 0.011 0.011

120° 0.018 0.019 0.019 0.019

90° 0.024 0.024 0.026 0.026

60° 0.035 0.035 0.036 0.037

30° 0.060 0.060 0.060 0.061

Note

• The table above shows the increment of thermal resistance R



130

120

110

100

90

80

70

Maximum Allowable

60

Heatsink Temperature (°C)

50

40

30°

0

50

ST180C..C Series
(Single side cooled)

(DC) = 0.17 K/W

R

thJ-hs

Ø

Conduction angle

180°

60°

90°

120°

100 150 200 250

Average On-State Current (A)

RECTANGULAR

CONDUCTION

when devices operate at different conduction angles than DC

thJC

130

120

110

100

90

80

70

60

Maximum Allowable

50

40

Heatsink Temperature (°C)

30

20

30°

0

100 150 200 250 300 350 400 450

50

TEST CONDITIONS UNITS

= TJ maximum K/W

T

J

ST180C..C Series
(Double side cooled)

(DC) = 0.17 K/W

R

thJ-hs

Conduction angle

60°

90°

120°

Average On-State Current (A)

Ø

180°

Fig. 1 - Current Ratings Characteristics

130

120

110

100

90

80

70

60

50

Maximum Allowable

40

Heatsink Temperature (°C)

30

20

0

30°

ST180C..C Series
(Single side cooled)

(DC) = 0.17 K/W

R

thJ-hs

90°

60°

120°

200

Ø

Conduction period

DC

180°

300100

Maximum Allowable

Heatsink Temperature (°C)

400

Average On-State Current (A)

Fig. 2 - Current Ratings Characteristics

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Fig. 3 - Current Ratings Characteristics

130

120

110

100

90

80

70

60

50

40

30

20

30°

0

200

ST180C..C Series
(Double side cooled)
R

90°

60°

120°

300100

(DC) = 0.08 K/W

thJ-hs

Conduction period

180°

400 500 600 700

Average On-State Current (A)

Fig. 4 - Current Ratings Characteristics

Document Number: 94396

Ø

DC

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700
600

100

200

300

400

500

0

900

1000

1100

1200

1300

0

Maximum Average

On-State Power Loss (W)

Average On-State Current (A)

800

100 200 300 400 500 600 700

DC
180°
120°

90°

60°

30°

RMS limit

ST180C..C Series
T

J

= 125 °C

Ø

Conduction period

VS-ST180C Series

Vishay Semiconductors

1000

900

800

700

600

500

400

300

Maximum Average

200

On-State Power Loss (W)

100

Fig. 5 - On-State Power Loss Characteristics

180°
120°

90°
60°
30°

0

0

100 150 200 250 300 350 400 450

50

RMS limit

Ø

Conduction angle

ST180C..C Series

= 125 °C

T

J

Average On-State Current (A)

4500

4000

3500

3000

On-State Current (A)

Peak Half Sine Wave

2500

ST180C..C Series

2000

1 10 100

Number of Equal Amplitude Half Cycle

At any rated load condition and with
rated V

applied following surge

RRM

Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

Current Pulses (N)

Fig. 7 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

5000

4500

4000

3500

Maximum non repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained.

Initial TJ = 125 °C

No Voltage Reapplied

Rated V

Reapplied

RRM

Fig. 6 - On-State Power Loss Characteristics

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10 000

TJ = 25 °C

1000

Instantaneous On-State Current (A)

100

123456

Instantaneous On-State Voltage (V)

Fig. 9 - On-State Voltage Drop Characteristics

3000

On-State Current (A)

Peak Half Sine Wave

2500

2000

Fig. 8 - Maximum Non-Repetitive Surge Current

TJ = 125 °C

ST180C..C Series

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ST180C..C Series

0.01 0.1 1

Pulse Train Duration (s)

Single and Double Side Cooled

Document Number: 94396

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0.1

1

10

100

0.001

Instantaneous Gate Current (A)

Instantaneous Gate Voltage (V)

0.01 0.1 1 10 100

T

J

= 25 °C

T

J

= 40 °C

T

J

= 125 °C

(b)

(1) (2)

(3) (4)

(1) PGM = 10 W, tp = 4 ms
(2) P

GM

= 20 W, tp = 2 ms

(3) P

GM

= 40 W, tp = 1 ms

(4) P

GM

= 60 W, tp = 0.66 ms

Frequency limited by P

G(AV)

V

GD

I

GD

Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; t

r

≤ 1 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω
t

r

≤ 1 µs

Device: ST180C..C Series

(a)

1

Steady state value

= 0.17 K/W

R

thJ-hs

(Single side cooled)
R

= 0.08 K/W

thJ-hs

0.1

(Double side cooled)
(DC operation)

- Transient

0.01

thJ-hs

Z

Thermal Impedance (K/W)

VS-ST180C Series

Vishay Semiconductors

ST180C..C Series

0.001

0.001

0.01 0.1 1 10

Square Wave Pulse Duration (s)

Fig. 10 - Thermal Impedance Z

Characteristics

thJ-hs

Fig. 11 - Gate Characteristics

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ORDERING INFORMATION TABLE

VS-ST180C Series

Vishay Semiconductors

Device code

STVS- 18 0 C 20 C 1 -

51 32 4 6 7 8 9

1 - Vishay Semiconductors product

- Thyristor

2

3

- Essential part number

- 0 = Converter grade

4

5

- C = Ceramic PUK

6

- Voltage code x 100 = V

7

- C = PUK case TO-200AB (A-PUK)

8

- 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)

(see Voltage Ratings table)

RRM

1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)

2 = Eyelet terminals (gate and auxiliary cathode soldered leads)

3 = Fast-on terminals (gate and auxiliary cathode soldered leads)

9

- Critical dV/dt:

None = 500 V/µs (standard selection)

L = 1000 V/µs (special selection)

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95074

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DIMENSIONS in millimeters (inches)

TO-200AB (A-PUK)

Anode to gate
Creepage distance: 7.62 (0.30) minimum
Strike distance: 7.12 (0.28) minimum

19 (0.75)

DIA. MAX.

19 (0.75)

DIA. MAX.

Gate terminal for

1.47 (0.06) DIA.
pin receptacle

Outline Dimensions

Vishay Semiconductors

0.3 (0.01) MIN.

13.7/14.4

(0.54/0.57)

0.3 (0.01) MIN.

38 (1.50) DIA MAX.

2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep

6.5 (0.26)

4.75 (0.19)

25° ± 5°

42 (1.65) MAX.

28 (1.10)

Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)

Document Number: 95074 For technical questions, contact: [e-mail]
Revision: 01-Aug-07 1

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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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