VS-18TQ035SPbF, VS-18TQ040SPbF, VS-18TQ045SPbF
D2PAK
PRODUCT SUMMARY
I
F(AV)
V
R
Schottky Rectifier, 18 A
FEATURES
cathode
1
N/C
Base
2
3
Anode
18 A
35 V to 45 V
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Halogen-free according to IEC 61249-2-21 definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
DESCRIPTION
The VS-18TQ... Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
Vishay High Power Products
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 18 A
Range 35 to 45 V
tp = 5 μs sine 1800 A
18 Apk, TJ = 125 °C 0.53 V
Range - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-18TQ035SPbF VS-18TQ040SPbF VS-18TQ045SPbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
35 40 45 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy E
Repetitive avalanche current I
I
F(AV)
I
FSM
50 % duty cycle at TC = 149 °C, rectangular waveform 18 A
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse 390
TJ = 25 °C, IAS = 3.6 A, L = 3.7 mH 24 mJ
AS
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated
load condition and with
rated V
RRM
applied
1800
A
3.6 A
Document Number: 94150 For technical questions, contact: diodestech@vishay.com
Revision: 12-Mar-10 1
www.vishay.com
VS-18TQ035SPbF, VS-18TQ040SPbF, VS-18TQ045SPbF
Vishay High Power Products
Schottky Rectifier, 18 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
18 A
Maximum forward voltage drop
See fig. 1
V
FM
36 A 0.72
(1)
18 A
36 A 0.67
Maximum reverse leakage current
See fig. 2
I
RM
Maximum junction capacitance C
Typical series inductance L
T
S
TJ = 25 °C
(1)
T
= 125 °C 25
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 1400 pF
Measured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.60
0.53
2.5
10 000 V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style D
, T
T
J
Stg
R
thJC
R
thCS
DC operation
See fig. 4
Mounting surface, smooth and greased 0.50
- 55 to 175 °C
1.50
2g
0.07 oz.
kgf · cm
(lbf · in)
18TQ035S
2
PAK
18TQ040S
18TQ045S
V
mA
°C/W
www.vishay.com For technical questions, contact: diodestech@vishay.com
Document Number: 94150
2 Revision: 12-Mar-10
VS-18TQ035SPbF, VS-18TQ040SPbF, VS-18TQ045SPbF
1000
100
10
Current (A)
1
- Instantaneous Forward
F
I
0.1
0 0.4 0.8 1.2 1.4 1.6
0.2 0.6 1.0
V
- Forward Voltage Drop (V)
FM
TJ = 175 °C
T
= 125 °C
J
= 25 °C
T
J
Schottky Rectifier, 18 A
1000
100
10
0.1
0.01
- Reverse Current (mA)
R
I
0.001
0.0001
Vishay High Power Products
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
1
TJ = 50 °C
0 5 25 351510 30 4020 45
TJ = 100 °C
TJ = 75 °C
TJ = 25 °C
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10 000
1000
- Junction Capacitance (pF)
T
C
100
01020 4030 50
TJ = 25 °C
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
P
0.1
0.01
- Thermal Impedance (°C/W)
thJC
Z
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Single pulse
(thermal resistance)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
DM
t
1
1/t2
thJC
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
t
2
.
+ T
C
.
Document Number: 94150 For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 12-Mar-10 3
VS-18TQ035SPbF, VS-18TQ040SPbF, VS-18TQ045SPbF
Vishay High Power Products
180
DC
18TQ
(DC) = 1.50 °C/W
R
thJC
10 000
175
170
165
160
155
Allowable Case Temperature (°C)
150
02812
I
824
41620
- Average Forward Current (A)
F(AV)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Schottky Rectifier, 18 A
15
10
5
Average Power Loss (W)
0
0
At any rated load condition
and with rated V applied
following surge
RRM
D = 0.08
D = 0.17
D = 0.25
D = 0.33
D = 0.50
RMS limit
DC
828
4
I
- Average Forward Current (A)
F(AV)
16 24
12
20
Fig. 6 - Forward Power Loss Characteristics
1000
- Non-Repetitive Surge Current (A)
100
FSM
I
10
100
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
D.U.T.
Current
monitor
IRFP460
= 25 Ω
R
g
Fig. 8 - Unclamped Inductive Test Circuit
1000
High-speed
Freewheel
diode
40HFL40S02
switch
10 000
V
= 25 V
d
+
www.vishay.com For technical questions, contact: diodestech@vishay.com
Document Number: 94150
4 Revision: 12-Mar-10