Vishay VS-175BGQ045 Data Sheet

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Cathode Anode
PowerTab
®
PRODUCT SUMMARY
Package PowerTab
I
F(AV)
V
R
V
at I
F
F
I
RM
T
max. 150 °C
J
Diode variation Single die
E
AS
Schottky Rectifier, 175 A
FEATURES
• 150 °C max. operating junction temperature
• High frequency operation
• Ultralow forward voltage drop
• Continuous high current operation
• Guard ring for enhanced ruggedness and long term reliability
• Screw mounting only
• Designed and qualified according to JEDEC-JESD47
®
175 A
45 V
0.7 V
640 mA at 125 °C
40 mJ
• PowerTab
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
The VS-175BGQ045 Schottky rectifier has been optimized for ultralow forward voltage drop specifically for low voltage output in high current AC/DC power supplies. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, reverse battery protection, and redundant power subsystems.
®
package
VS-175BGQ045
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
VOLTAGE RATINGS
PARAMETER SYMBOL 175BGQ045 UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle non-repetitive surge current
Non-repetitive avalanche energy E
Repetitive avalanche current I
Revision: 11-Dec-12
Rectangular waveform 175 A
T
C
tp = 5 μs sine 8700 A
175 Apk (typical) 0.63 V
T
J
Range - 55 to 150 °C
R
RWM
F(AV)
I
FSM
AR
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
50 % duty cycle at TC = 103 °C, rectangular waveform 175 A
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse 1550
TJ = 25 °C, IAS = 6 A, L = 2 mH 40 mJ
AS
Current decaying linearly to zero in 1 μs Frequency limited by T
maximum VA = 1.5 x VR typical
J
1
103 °C
45 V
150 °C
45 V
Following any rated load condition and with rated V
applied
RRM
8700
6A
Document Number: 94582
A
VS-175BGQ045
V
FM -
Forward Voltage Drop (V)
I
F
-
Instantaneous Forward Current (A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1
10
100
1000
TJ = 25 °C
TJ = 125 °C
TJ = 150 °C
VR - Reverse Voltage (V)
I
R
- Reverse Current (mA)
0 5 10 15 20 25 30 35 40 45
0.01
0.1
1
10
100
1000
10 000
75 °C
100 °C
50 °C
125 °C
150 °C
25 °C
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ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
Forward voltage drop V
FM
100 A
175 A 0.67 0.75
(1)
100 A
175 A 0.63 0.7
T
= 25 °C
J
= 150 °C
T
J
TJ = 150 °C, VR = 45 V 1200 2000
Reverse leakage current I
Maximum junction capacitance C
Typical series inductance L
Maximum voltage rate of change dV/dt Rated V
RM
(1)
T
S
= 25 °C
J
T
= 125 °C 360 640
J
V
= Rated V
R
VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C 5600 pF
Measured from tab to mounting plane 3.5 nH
R
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range
Maximum thermal resistance, junction to case
Typical thermal resistance, case to heatsink
Approximate weight
Mounting torque
minimum 1.2 (10)
maximum 2.4 (20)
Marking device Case style PowerTab
, T
T
J
Stg
R
R
thJC
thCS
DC operation 0.25
Mounting surface, smooth and greased 0.20
®
Vishay Semiconductors
0.55 0.58
0.49 0.54
0.6 2
R
10 000 V/μs
- 55 to 150 °C
°C/W
5g
0.18 oz.
N · m
(lbf · in)
175BGQ045
V
mAT
Revision: 11-Dec-12
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Reverse Voltage
2
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 94582
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