Vishay VS-16CTU04PbF Data Sheet
VS-16CTU04PbF
TO-220AB
Vishay Semiconductors
Ultrafast Rectifier, 16 A FRED Pt
Anode
PRODUCT SUMMARY
Package TO-220AB
I
F(AV)
V
R
V
at I
F
F
t
typ. See Recovery table
rr
T
max. 175 °C
J
Diode variation Common cathode
Base
common
cathode
2
2
Common
cathode
13
2 x 8 A
400 V
1.3 V
Anode
®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
FRED Pt® series are the state of the art ultrafast recovery
rectifiers specifically designed with optimized performance
of forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output
rectification stage of SMPS, UPS, DC/DC converters as
well as freewheeling diode in low voltage inverters and
chopper motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
Average rectified forward current
Non-repetitive peak surge current I
Peak repetitive forward current I
Operating junction and storage temperatures T
per leg
total device T
I
F(AV)
FSM
FRM
, T
J
RRM
= 155 °C, rated V
C
TC = 25 °C 100
TC = 155 °C, rated VR, square wave, 20 kHz 16
Stg
R
400 V
8
16
- 65 to 175 °C
A
ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
,
V
BR
V
R
IR = 100 μA 400 - -
R
IF = 8 A - 1.19 1.3
F
I
= 8 A, TJ = 150 °C - 0.94 1.0
F
VR = VR rated - 0.2 10
T
= 150 °C, VR = VR rated - 20 500
J
VR = 400 V - 14 - pF
T
Measured lead to lead 5 mm from package body - 8.0 - nH
S
V
μA
Document Number: 94008 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 28-Apr-11 DiodesAmericas@vishay.com
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
www.vishay.com/doc?91000
VS-16CTU04PbF
Vishay Semiconductors
Ultrafast Rectifier, 16 A FRED Pt
DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 50 A/μA, VR = 30 V - 35 60
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
rr
= 25 °C
J
T
= 125 °C - 67 -
J
TJ = 25 °C - 2.8 -
T
= 125 °C - 6.3 -
J
= 8 A
I
F
/dt = 200 A/μs
dI
F
V
= 200 V
R
TJ = 25 °C - 60 -
T
= 125 °C - 210 -
J
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
Thermal resistance,
junction to case
per leg
per device - 1.8 2
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device Case style TO-220AB 16CTU04
, T
T
J
Stg
R
thJC
R
thJA
R
thCS
Typical socket mount - - 50
Mounting surface, flat, smooth
and greased
®
-43-
- 65 - 175 °C
-3.64
-0.5-
-2.0- g
-0.07- oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf in)
nsT
A
nC
°C/W
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94008
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 28-Apr-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Ultrafast Rectifier, 16 A FRED Pt
1
10
TJ = 175 °C
T
J
= 150 °C
T
J
= 25 °C
100
0 0.5 2.51.5
1
2
VF - Forward Voltage Drop (V)
I
F
- Instantaneous
Forward Current (A)
0.1
0.001
0.01
0.1
1
10
100
1000
0 100 200 300 400
0.0001
VR - Reverse Voltage (V)
I
R
- Reverse Current (µA)
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
TJ = 25 °C
0
100 200 300 400
1000
100
10
VR - Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
VS-16CTU04PbF
®
Vishay Semiconductors
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Document Number: 94008 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 28-Apr-11 DiodesAmericas@vishay.com
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 4 - Maximum Thermal Impedance Z
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
This datasheet is subject to change without notice.
Characteristics
thJC
www.vishay.com/doc?91000
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