Vishay VS-15ETX06SPbF, VS-15ETX06-1PbF Data Sheet

VS-15ETX06SPbF, VS-15ETX06-1PbF
Vishay High Power Products
VS-15ETX06SPbF
Base
Cathode
2
1
N/C
D2PAK
3
Anode
PRODUCT SUMMARY
t
rr
I
F(AV)
V
R
Hyperfast Rectifier, 15 A FRED Pt
FEATURES
VS-15ETX06-1PbF
2
1
N/C
TO-262
3
Anode
18 ns
15 A
600 V
• Benchmark ultralow forward voltage drop
• Hyperfast recovery time
• Low leakage current
• 175 °C operating junction temperature
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• Halogen-free according to IEC 61249-2-21 definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the ac-to-dc section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.
®
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage V
Average rectified forward current I
Peak repetitive forward current I
Operating junction and storage temperatures T
F(AV)
FSM
, T
J
RRM
TC = 133 °C 15
TJ = 25 °C 170
FM
Stg
600 V
ANon-repetitive peak surge current I
30
- 65 to 175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage, blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
Document Number: 94007 For technical questions, contact: diodestech@vishay.com Revision: 11-Mar-10 1
,
V
BR
V
R
IR = 100 μA 600 - -
R
IF = 15 A - 2.3 3.2
F
T
S
= 15 A, TJ = 150 °C - 1.5 1.8
I
F
VR = VR rated - 0.1 50
T
= 150 °C, VR = VR rated - 40 300
J
VR = 600 V - 20 - pF
Measured lead to lead 5 mm from package body - 8.0 - nH
V
μA
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VS-15ETX06SPbF, VS-15ETX06-1PbF
Vishay High Power Products
Hyperfast Rectifier,
15 A FRED Pt
®
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - 18 22
= 15 A, dIF/dt = 100 A/μs, VR = 30 V - 20 32
I
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
rr
rr
RRM
rr
F
T
= 25 °C
J
= 125 °C - 52 -
T
J
TJ = 25 °C - 2.4 -
T
= 125 °C - 5.1 -
J
= 15 A
I
F
dI
/dt = 200 A/μs
F
= 390 V
V
R
-22-
TJ = 25 °C - 25 -
T
= 125 °C - 150 -
J
-37-ns
-16- A
-350- nC
TJ = 125 °C
= 15 A
I
F
dI
/dt = 800 A/μs
F
= 390 V
V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage temperature range
Thermal resistance, junction to case per leg
Thermal resistance, junction to ambient per leg
Thermal resistance, case to heatsink
Weight
Mounting torque
Marking device
T
, T
J
Stg
R
-1.01.3
thJC
Typical socket mount - - 70
R
thJA
R
thCS
Mounting surface, flat, smooth and greased
- 65 - 175 °C
-0.5-
-2.0- g
-0.07- oz.
Case style D
6.0
(5.0)
PAK 15ETX06S
-
Case style TO-262 15ETX06-1
12
(10)
kgf · cm
(lbf · in)
ns
A
nC
°C/W
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Document Number: 94007
2 Revision: 11-Mar-10
VS-15ETX06SPbF, VS-15ETX06-1PbF
100
10
- Instantaneous
F
I
Forward Current (A)
1
0
0.5
TJ = 175 °C
= 150 °C
T
J
= 25 °C
T
J
1
2
3
2.51.5
VF - Forward Voltage Drop (V)
Hyperfast Rectifier,
15 A FRED Pt
3.5 4
®
1000
100
10
0.1
0.01
- Reverse Current (µA)
R
I
0.001
0.0001
Vishay High Power Products
TJ = 175 °C
T
= 150 °C
J
= 125 °C
T
J
= 100 °C
T
1
0 100 200 300 400 500 600
VR - Reverse Voltage (V)
J
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
100
TJ = 25 °C
T
= 25 °C
J
10
- Junction Capacitance (pF)
T
C
1
100 200 300 500 600400
0
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
P
DM
t
D = 0.50
0.1
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1
Single pulse
(thermal resistance)
D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
1
1/t2
thJC
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
t
2
.
+ T
C
.
Document Number: 94007 For technical questions, contact: diodestech@vishay.com
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Revision: 11-Mar-10 3
VS-15ETX06SPbF, VS-15ETX06-1PbF
Vishay High Power Products
180
170
160
150
140
Square wave (D = 0.50)
applied
Rated V
130
120
Allowable Case Temperature (°C)
110
0 5 10 15 20 25
R
See note (1)
I
- Average Forward Current (A)
F(AV)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
40
35
30
25
20
15
10
Average Power Loss (W)
5
0
0 5 10 15 20 25
DC
I
- Average Forward Current (A)
F(AV)
Fig. 6 - Forward Power Loss Characteristics
DC
RMS limit
D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5
Hyperfast Rectifier,
15 A FRED Pt
®
70
50
(ns)
rr
t
30
10
100
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
450
400
350
300
250
(nC)
rr
200
Q
150
100
50
0
100 1000
VR = 390 V TJ = 125 °C
= 25 °C
T
J
IF = 30 A
IF = 15 A
IF = 30 A
IF = 15 A
dIF/dt (A/µs)
VR = 390 V
= 125 °C
T
J
= 25 °C
T
J
IF = 30 A
IF = 15 A
dIF/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
1000
/dt
F
Note
(1)
Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V
REV
x VFM at (I
F(AV)
REV
) x R
;
thJC
/D) (see fig. 6);
F(AV)
R
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Document Number: 94007
4 Revision: 11-Mar-10
VS-15ETX06SPbF, VS-15ETX06-1PbF
Hyperfast Rectifier,
15 A FRED Pt
L = 70 μH
dIF/dt
adjust
Fig. 9 - Reverse Recovery Parameter Test Circuit
I
F
0
(1)
(1) dI
/dt - rate of change of current
F
through zero crossing
- peak reverse recovery current
(2) I
RRM
- reverse recovery time measured
(3) t
rr
from zero crossing point of negative going I through 0.75 I extrapolated to zero current.
to point where a line passing
F
and 0.50 I
RRM
Fig. 10 - Reverse Recovery Waveform and Definitions
dIF/dt
RRM
G
®
Vishay High Power Products
= 200 V
V
R
0.01 Ω
D.U.T.
D
IRFP250
S
(3)
t
rr
t
a
(2)
I
RRM
t
b
(4)
Q
rr
0.5 I
RRM
dI
/dt
(rec)M
0.75 I
RRM
(4) Q
- area under curve dened by t
rr
and I
RRM
trr x I
(5) dI current during t
=
Q
rr
/dt - peak rate of change of
(rec)M
portion of t
b
(5)
rr
RRM
2
rr
Document Number: 94007 For technical questions, contact: diodestech@vishay.com
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Revision: 11-Mar-10 5
VS-15ETX06SPbF, VS-15ETX06-1PbF
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
VS- 15 E T X 06 S TRL PbF
1 - HPP product suffix
- Current rating (15 A)
2
- E = Single diode
3
4 - T = TO-220, D2PAK
- X = Hyperfast recovery
5
- Voltage rating (06 = 600 V)
6
7
-
S = D2PAK
-1 = TO-262
-
8
9
None = Tube (50 pieces)
TRL = Tape and reel (left oriented, for D
TRR = Tape and reel (right oriented, for D
- PbF = Lead (Pb)-free
Hyperfast Rectifier,
15 A FRED Pt
324
51
®
6789
2
PAK package)
2
PAK package)
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95014
Part marking information www.vishay.com/doc?95008
Packaging information www.vishay.com/doc?95032
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Document Number: 94007
D2PAK, TO-262
DIMENSIONS FOR D2PAK in millimeters and inches
Outline Dimensions
Vishay High Power Products
Conforms to JEDEC outline D
(2)(3)
E
(3)
L1
D
L2
2 x
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
4
132
BB
e
2
H
2 x b2
2 x b
0.010
PAK (SMD-220)
A
Detail A
(2)
C
MM
A
Lead tip
B
A
c2
AA
A
c
M
± 0.004
B
0° to 8°
Gauge
plane
L3
B
L
L4
Detail “A”
Rotated 90 °CW
Scale: 8:1
(E)
E1
View A - A
A1
(3)
(D1)
17.90 (0.70)
15.00 (0.625)
2.32
(0.08)
Plating
Seating
plane
2.64 (0.103)
2.41 (0.096)
(3)
H
B
Pad layout
11.00 MIN.
(0.43)
MIN.
(4)
b1, b3
(c)
(b, b2)
Section B - B and C - C
Scale: None
9.65
(0.38)
3.81
(0.15)
c1
MIN.
MIN.
Base Metal
(4)
SYMBOL
MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
NOTES SYMBOL
MILLIMETERS INCHES
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
(2)
Dimension D and E do not include mold flash. Mold flash shall not
(7)
Outline conforms to JEDEC outline TO-263AB
exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body
(3)
Thermal pad contour optional within dimension E, L1, D1 and E1
(4)
Dimension b1 and c1 apply to base metal only
(5)
Datum A and B to be determined at datum plane H
(6)
Controlling dimension: inch
Document Number: 95014 For technical questions concerning discrete products, contact: diodes-tech@vishay.com Revision: 31-Mar-09 For technical questions concerning module products, contact: ind-modules@vishay.com
NOTES
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1
Outline Dimensions
Vishay High Power Products
D2PAK, TO-262
DIMENSIONS FOR TO-262 in millimeters and inches
Modified JEDEC outline TO-262
(Datum A)
(3)
L1
D
(2) (3)
E
1
L2
B
B
2 x e
MM
0.010 A B
Lead tip
A
2
3
C
C
L
(2)
3 x b2
3 x b
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
c
A
c2
A1
B
A
Seating
plane
A
E
E1
Section A - A
Plating
(4)
b1, b3
c
(b, b2)
Section B - B and C - C
Scale: None
(3)
Base metal
c1
(3)D1
(4)
SYMBOL
MILLIMETERS INCHES
MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190
A1 2.03 3.02 0.080 0.119
b 0.51 0.99 0.020 0.039
b1 0.51 0.89 0.020 0.035 4
b2 1.14 1.78 0.045 0.070
b3 1.14 1.73 0.045 0.068 4
c 0.38 0.74 0.015 0.029
c1 0.38 0.58 0.015 0.023 4
c2 1.14 1.65 0.045 0.065
D 8.51 9.65 0.335 0.380 2
D1 6.86 8.00 0.270 0.315 3
E 9.65 10.67 0.380 0.420 2, 3
E1 7.90 8.80 0.311 0.346 3
e 2.54 BSC 0.100 BSC
L 13.46 14.10 0.530 0.555
L1 - 1.65 - 0.065 3
L2 3.56 3.71 0.140 0.146
Notes
(1)
Dimensioning and tolerancing as per ASME Y14.5M-1994
(2)
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body
(3)
Thermal pad contour optional within dimension E, L1, D1 and E1
(4)
Dimension b1 and c1 apply to base metal only
(5)
Controlling dimension: inches
(6)
Outline conform to JEDEC TO-262 except A1 (maximum), b (minimum) and D1 (minimum) where dimensions derived the actual package outline
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NOTES
Document Number: 95014
Revision: 31-Mar-09
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