VS-15ETX06PbF, VS-15ETX06FPPbF
Vishay Semiconductors
Ultrafast Rectifier, 15 A FRED Pt®
TO-220AC |
TO-220 FULL-PAK |
Base |
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cathode |
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2 |
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1 |
3 |
Cathode |
Anode |
VS-15ETX06PbF
1 |
3 |
Cathode |
Anode |
VS-15ETX06FPPbF |
PRODUCT SUMMARY
Package |
TO-220AC, TO-220FP |
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IF(AV) |
15 A |
VR |
600 V |
VF at IF |
3.2 V |
trr typ. |
18 ns |
TJ max. |
175 °C |
Diode variation |
Single die |
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FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Benchmark ultralow forward voltage drop
•Low leakage current
•Fully isolated package (VINS = 2500 VRMS)
•UL E78996 pending
•Compliant to RoHS Directive 2002/95/EC
•Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery.
The planar |
structure and |
the |
platinum |
doped life |
time control |
guarantee |
the |
best |
overall |
performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS |
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PARAMETER |
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SYMBOL |
TEST CONDITIONS |
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VALUES |
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UNITS |
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Peak repetitive reverse voltage |
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VRRM |
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600 |
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V |
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Average rectified forward current |
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IF(AV) |
TC = 133 °C |
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15 |
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TC = 62 °C (FULL-PAK) |
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A |
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Non-repetitive peak surge current |
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IFSM |
TJ = 25 °C |
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170 |
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Peak repetitive forward current |
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IFM |
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30 |
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Operating junction and storage temperatures |
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TJ, TStg |
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- 65 to 175 |
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°C |
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) |
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PARAMETER |
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SYMBOL |
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TEST CONDITIONS |
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MIN. |
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TYP. |
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MAX. |
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UNITS |
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Breakdown voltage, |
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VBR, |
IR |
= 100 μA |
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600 |
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- |
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blocking voltage |
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VR |
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V |
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Forward voltage |
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VF |
IF = 15 A |
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- |
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2.3 |
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3.2 |
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IF = 15 A, TJ = 150 °C |
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1.5 |
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1.8 |
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Reverse leakage current |
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IR |
VR = VR rated |
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- |
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0.1 |
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50 |
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μA |
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TJ |
= 150 °C, VR = VR rated |
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40 |
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300 |
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Junction capacitance |
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CT |
VR = 600 V |
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20 |
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pF |
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Series inductance |
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LS |
Measured lead to lead 5 mm from package body |
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8.0 |
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nH |
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Document Number: 94006 |
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For technical questions within your region, please contact one of the following: |
www.vishay.com |
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Revision: 28-Apr-11 |
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com |
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1 |
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-15ETX06PbF, VS-15ETX06FPPbF
Vishay Semiconductors Ultrafast Rectifier, 15 A FRED Pt®
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER |
SYMBOL |
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TEST CONDITIONS |
MIN. |
TYP. |
MAX. |
UNITS |
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IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V |
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18 |
22 |
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Reverse recovery time |
trr |
IF = 15 A, dIF/dt = 100 A/μs, VR = 30 V |
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20 |
32 |
ns |
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TJ = 25 °C |
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22 |
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TJ = 125 °C |
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52 |
- |
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IF = 15 A |
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TJ = 25 °C |
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2.4 |
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Peak recovery current |
IRRM |
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dIF/dt = 200 A/μs |
A |
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TJ = 125 °C |
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5.1 |
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VR = 390 V |
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Reverse recovery charge |
Qrr |
TJ = 25 °C |
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25 |
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μC |
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TJ = 125 °C |
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150 |
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Reverse recovery time |
trr |
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IF = 15 A |
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37 |
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ns |
Peak recovery current |
IRRM |
TJ = 125 °C |
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dIF/dt = 800 A/μs |
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16 |
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A |
Reverse recovery charge |
Qrr |
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VR = 390 V |
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350 |
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nC |
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THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER |
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SYMBOL |
TEST CONDITIONS |
MIN. |
TYP. |
MAX. |
UNITS |
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Maximum junction and |
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TJ, TStg |
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- 65 |
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175 |
°C |
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storage temperature range |
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Thermal resistance, |
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RthJC |
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1.0 |
1.3 |
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junction to case |
(FULL-PAK) |
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3.0 |
3.5 |
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Thermal resistance, |
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RthJA |
Typical socket mount |
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70 |
°C/W |
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junction to ambient per leg |
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Thermal resistance, |
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RthCS |
Mounting surface, flat, smooth |
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0.5 |
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case to heatsink |
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and greased |
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Weight |
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2.0 |
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g |
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0.07 |
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oz. |
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Mounting torque |
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6.0 |
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12 |
kgf · cm |
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(5.0) |
(10) |
(lbf · in) |
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Marking device |
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Case style TO-220AC |
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15ETX06 |
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Case style TO-220 FULL-PAK |
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15ETX06FP |
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100 |
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<![if ! IE]> <![endif]>Instantaneous |
<![if ! IE]> <![endif]>ForwardCurrent (A) |
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TJ = 150 °C |
<![if ! IE]> <![endif]>ReverseCurrent (µA) |
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<![if ! IE]> <![endif]>I |
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10 |
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TJ = 175 °C |
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<![if ! IE]> <![endif]>- |
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TJ = 25 °C |
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<![if ! IE]> <![endif]>F |
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<![if ! IE]> <![endif]>R |
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<![if ! IE]> <![endif]>I |
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1 |
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0 |
0.5 |
1 |
1.5 |
2 |
2.5 |
3 |
3.5 |
4 |
1000
TJ = 175 °C
100 TJ = 150 °C
10 TJ = 125 °C
TJ = 100 °C
1
0.1 TJ = 25 °C
0.01
0.001
0.0001
0 |
100 |
200 |
300 |
400 |
500 |
600 |
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VF - Forward Voltage Drop (V) |
VR - Reverse Voltage (V) |
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Fig. 1 - Typical Forward Voltage Drop Characteristics |
Fig. 2 - Typical Values of Reverse Current vs. |
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Reverse Voltage |
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www.vishay.com |
For technical questions within your region, please contact one of the following: |
Document Number: 94006 |
|
2 |
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com |
Revision: 28-Apr-11 |
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-15ETX06PbF, VS-15ETX06FPPbF
Ultrafast Rectifier, 15 A FRED Pt® Vishay Semiconductors
<![endif]>CT - Junction Capacitance (pF)
1000
100
TJ = 25 °C
10
1
0 |
100 |
200 |
300 |
400 |
500 |
600 |
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
<![if ! IE]> <![endif]>(°C/W) |
10 |
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<![if ! IE]> <![endif]>Impedance |
1 |
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PDM |
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D = 0.50 |
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t1 |
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<![if ! IE]> <![endif]>Thermal |
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0.1 |
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D = 0.20 |
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t2 |
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D = 0.10 |
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D = 0.05 |
Notes: |
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<![if ! IE]> <![endif]>- |
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D = 0.02 |
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Single pulse |
1. Duty factor D = t1/t2 . |
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<![if ! IE]> <![endif]>thJC |
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D = 0.01 |
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(thermal resistance) |
2. Peak TJ |
= PDM x ZthJC |
+ TC |
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<![if ! IE]> <![endif]>Z |
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0.01 |
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0.00001 |
0.0001 |
0.001 |
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0.01 |
0.1 |
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1 |
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
<![if ! IE]> <![endif]>(°C/W) |
10 |
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<![if ! IE]> <![endif]>Impedance |
1 |
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PDM |
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<![if ! IE]> <![endif]>Thermal |
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D = 0.50 |
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t1 |
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0.1 |
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D = 0.20 |
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t2 |
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D = 0.10 |
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Single pulse |
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D = 0.05 |
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Notes: |
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<![if ! IE]> <![endif]>- |
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(thermal resistance) |
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D = 0.02 |
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<![if ! IE]> <![endif]>thJC |
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1. Duty factor D = t1/t2 . |
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D = 0.01 |
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2. Peak TJ |
= PDM x ZthJC |
+ TC |
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<![if ! IE]> <![endif]>Z |
0.01 |
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0.00001 |
0.0001 |
0.001 |
0.01 |
0.1 |
1 |
10 |
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100 |
t1 - Rectangular Pulse Duration (s)
Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FULL-PAK)
Document Number: 94006 |
For technical questions within your region, please contact one of the following: |
www.vishay.com |
Revision: 28-Apr-11 |
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com |
3 |
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000