Vishay VS-15ETX06PbF, VS-15ETX06FPPbF Data Sheet

VS-15ETX06PbF, VS-15ETX06FPPbF

Vishay Semiconductors

Ultrafast Rectifier, 15 A FRED Pt®

TO-220AC

TO-220 FULL-PAK

Base

 

cathode

2

 

1

3

Cathode

Anode

VS-15ETX06PbF

1

3

Cathode

Anode

VS-15ETX06FPPbF

PRODUCT SUMMARY

Package

TO-220AC, TO-220FP

 

 

IF(AV)

15 A

VR

600 V

VF at IF

3.2 V

trr typ.

18 ns

TJ max.

175 °C

Diode variation

Single die

 

 

FEATURES

• Hyperfast recovery time

• Low forward voltage drop

• 175 °C operating junction temperature

• Benchmark ultralow forward voltage drop

Low leakage current

Fully isolated package (VINS = 2500 VRMS)

UL E78996 pending

Compliant to RoHS Directive 2002/95/EC

Designed and qualified for industrial level

DESCRIPTION/APPLICATIONS

State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery.

The planar

structure and

the

platinum

doped life

time control

guarantee

the

best

overall

performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes.

Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.

ABSOLUTE MAXIMUM RATINGS

 

 

 

 

 

 

 

 

 

 

PARAMETER

 

 

 

 

SYMBOL

TEST CONDITIONS

 

 

VALUES

 

UNITS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Peak repetitive reverse voltage

 

 

VRRM

 

 

 

 

600

 

 

 

V

Average rectified forward current

 

 

IF(AV)

TC = 133 °C

 

 

15

 

 

 

 

 

 

TC = 62 °C (FULL-PAK)

 

 

 

 

 

A

 

 

 

 

 

 

 

 

 

 

 

 

 

Non-repetitive peak surge current

 

 

IFSM

TJ = 25 °C

 

 

170

 

 

 

 

 

 

 

 

 

 

 

Peak repetitive forward current

 

 

IFM

 

 

 

 

30

 

 

 

 

Operating junction and storage temperatures

 

TJ, TStg

 

 

 

 

- 65 to 175

 

°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

 

 

 

 

 

 

 

 

PARAMETER

 

SYMBOL

 

 

TEST CONDITIONS

 

MIN.

 

TYP.

 

MAX.

 

UNITS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Breakdown voltage,

 

VBR,

IR

= 100 μA

 

 

600

 

-

 

-

 

 

blocking voltage

 

VR

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V

Forward voltage

 

VF

IF = 15 A

 

 

-

 

2.3

 

3.2

 

 

 

 

 

 

 

 

 

IF = 15 A, TJ = 150 °C

 

 

-

 

1.5

 

1.8

 

 

 

 

 

 

 

 

 

 

 

Reverse leakage current

 

IR

VR = VR rated

 

 

-

 

0.1

 

50

 

μA

 

TJ

= 150 °C, VR = VR rated

 

-

 

40

 

300

 

 

 

 

 

 

 

 

 

Junction capacitance

 

CT

VR = 600 V

 

 

-

 

20

 

-

 

pF

Series inductance

 

LS

Measured lead to lead 5 mm from package body

 

-

 

8.0

 

-

 

nH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Document Number: 94006

 

For technical questions within your region, please contact one of the following:

www.vishay.com

Revision: 28-Apr-11

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

 

1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-15ETX06PbF, VS-15ETX06FPPbF

Vishay Semiconductors Ultrafast Rectifier, 15 A FRED Pt®

DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)

PARAMETER

SYMBOL

 

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

 

 

 

 

 

 

 

 

 

IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V

-

18

22

 

Reverse recovery time

trr

IF = 15 A, dIF/dt = 100 A/μs, VR = 30 V

-

20

32

ns

TJ = 25 °C

 

 

-

22

-

 

 

 

 

 

 

 

TJ = 125 °C

 

 

-

52

-

 

 

 

 

 

IF = 15 A

 

 

 

 

 

 

TJ = 25 °C

 

-

2.4

-

 

Peak recovery current

IRRM

 

dIF/dt = 200 A/μs

A

TJ = 125 °C

 

-

5.1

-

 

 

 

VR = 390 V

 

Reverse recovery charge

Qrr

TJ = 25 °C

 

-

25

-

μC

 

 

TJ = 125 °C

 

 

-

150

-

 

 

 

 

 

Reverse recovery time

trr

 

 

IF = 15 A

-

37

-

ns

Peak recovery current

IRRM

TJ = 125 °C

 

dIF/dt = 800 A/μs

-

16

-

A

Reverse recovery charge

Qrr

 

 

VR = 390 V

-

350

-

nC

 

 

 

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

 

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

 

 

 

 

 

 

 

 

 

Maximum junction and

 

TJ, TStg

 

- 65

-

175

°C

storage temperature range

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Thermal resistance,

 

 

RthJC

 

-

1.0

1.3

 

junction to case

(FULL-PAK)

 

-

3.0

3.5

 

 

 

 

 

 

 

 

 

 

 

 

Thermal resistance,

 

RthJA

Typical socket mount

-

-

70

°C/W

junction to ambient per leg

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Thermal resistance,

 

RthCS

Mounting surface, flat, smooth

-

0.5

-

 

case to heatsink

 

and greased

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Weight

 

 

 

-

2.0

-

g

 

 

 

 

 

 

 

 

 

 

-

0.07

-

oz.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Mounting torque

 

 

 

6.0

-

12

kgf · cm

 

 

 

(5.0)

(10)

(lbf · in)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Marking device

 

 

Case style TO-220AC

 

15ETX06

 

 

 

 

 

 

 

 

 

 

Case style TO-220 FULL-PAK

 

15ETX06FP

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>Instantaneous

<![if ! IE]>

<![endif]>ForwardCurrent (A)

 

 

 

 

TJ = 150 °C

<![if ! IE]>

<![endif]>ReverseCurrent (µA)

<![if ! IE]>

<![endif]>I

 

 

 

 

 

 

 

 

10

 

 

 

 

TJ = 175 °C

 

<![if ! IE]>

<![endif]>-

 

 

 

 

 

TJ = 25 °C

 

 

<![if ! IE]>

<![endif]>F

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>R

 

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>I

 

1

 

 

 

 

 

 

 

 

 

0

0.5

1

1.5

2

2.5

3

3.5

4

1000

TJ = 175 °C

100 TJ = 150 °C

10 TJ = 125 °C

TJ = 100 °C 1

0.1 TJ = 25 °C

0.01

0.001

0.0001

0

100

200

300

400

500

600

 

VF - Forward Voltage Drop (V)

VR - Reverse Voltage (V)

Fig. 1 - Typical Forward Voltage Drop Characteristics

Fig. 2 - Typical Values of Reverse Current vs.

 

 

Reverse Voltage

 

 

 

www.vishay.com

For technical questions within your region, please contact one of the following:

Document Number: 94006

2

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Revision: 28-Apr-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Vishay VS-15ETX06PbF, VS-15ETX06FPPbF Data Sheet

VS-15ETX06PbF, VS-15ETX06FPPbF

Ultrafast Rectifier, 15 A FRED Pt® Vishay Semiconductors

<![if ! IE]>

<![endif]>CT - Junction Capacitance (pF)

1000

100

TJ = 25 °C

10

1

0

100

200

300

400

500

600

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

<![if ! IE]>

<![endif]>(°C/W)

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>Impedance

1

 

 

 

 

 

 

 

 

 

 

 

 

PDM

 

 

 

 

 

D = 0.50

 

t1

 

 

<![if ! IE]>

<![endif]>Thermal

 

 

 

 

 

 

0.1

 

 

D = 0.20

 

t2

 

 

 

 

D = 0.10

 

 

 

 

 

 

 

 

 

 

 

 

 

D = 0.05

Notes:

 

 

 

<![if ! IE]>

<![endif]>-

 

 

 

D = 0.02

 

 

 

 

 

Single pulse

1. Duty factor D = t1/t2 .

 

<![if ! IE]>

<![endif]>thJC

 

 

 

 

 

D = 0.01

 

 

(thermal resistance)

2. Peak TJ

= PDM x ZthJC

+ TC

.

 

 

<![if ! IE]>

<![endif]>Z

 

 

 

 

 

 

 

 

0.01

 

 

 

 

 

 

 

 

0.00001

0.0001

0.001

 

0.01

0.1

 

1

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics

<![if ! IE]>

<![endif]>(°C/W)

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>Impedance

1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PDM

 

 

 

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>Thermal

 

 

 

D = 0.50

 

 

t1

 

 

0.1

 

 

D = 0.20

 

 

t2

 

 

 

 

D = 0.10

 

 

 

 

 

 

 

 

 

 

 

 

 

Single pulse

 

D = 0.05

 

Notes:

 

 

 

<![if ! IE]>

<![endif]>-

 

(thermal resistance)

 

D = 0.02

 

 

 

 

<![if ! IE]>

<![endif]>thJC

 

 

 

1. Duty factor D = t1/t2 .

 

 

 

 

D = 0.01

 

 

 

 

 

 

2. Peak TJ

= PDM x ZthJC

+ TC

.

 

 

 

 

 

<![if ! IE]>

<![endif]>Z

0.01

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.00001

0.0001

0.001

0.01

0.1

1

10

 

100

t1 - Rectangular Pulse Duration (s)

Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FULL-PAK)

Document Number: 94006

For technical questions within your region, please contact one of the following:

www.vishay.com

Revision: 28-Apr-11

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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