Ultralow VF Hyperfast Rectifier for
V
S-15ETL06SPbFVS-15ETL06-1PbF
Anode
1
3
Base
cathode
2
N/C
Anode
1
3
2
N/C
Discontinuous Mode PFC, 15 A FRED Pt
PRODUCT SUMMARY
Package TO-263AB (D2PAK), TO-262AA
I
F(AV)
V
R
V
at I
F
F
t
(typ.) 60 ns
rr
max. 175 °C
T
J
Diode variation Single die
15 A
600 V
1.05 V
VS-15ETL06SPbF, VS-15ETL06-1PbF
Vishay Semiconductors
®
FEATURES
• Benchmark ultralow forward voltage drop
• Hyperfast recovery time
• Low leakage current
• 175 °C operating junction temperature
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Halogen-free according to IEC 61249-2-21
definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
DESCRIPTION
State of the art, ultralow VF, soft-switching hyperfast
rectifiers optimized for Discontinuous (Critical) Mode (DCM)
Power Factor Correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimize the switching losses and
reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
APPLICATIONS
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and
monitor, games units and DVD ac-to-dc power supplies.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage V
Average rectified forward current I
Peak repetitive forward current I
Operating junction and storage temperatures T
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
Document Number: 94005 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 23-Jun-10 DiodesAmericas@vishay.com
RRM
F(AV)
FSM
FM
, T
J
,
V
BR
V
R
IR = 100 μA 600 - -
R
IF = 15 A - 0.99 1.05
F
I
= 15 A, TJ = 150 °C - 0.85 0.92
F
VR = VR rated - 0.1 10
T
= 150 °C, VR = VR rated - 15 120
J
VR = 600 V - 20 - pF
T
Measured lead to lead 5 mm from package body - 8.0 - nH
S
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TC = 154 °C 15
TJ = 25 °C 250
Stg
600 V
ANon-repetitive peak surge current I
30
- 65 to 175 °C
V
μA
VS-15ETL06SPbF, VS-15ETL06-1PbF
Vishay Semiconductors
Ultralow VF Hyperfast Rectifier for
Discontinuous Mode PFC, 15 A FRED Pt
®
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - 60 120
= 15 A, dIF/dt = 100 A/μs, VR = 30 V - 190 270
I
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
rr
F
T
= 25 °C
J
= 125 °C - 320 -
T
J
TJ = 25 °C - 19 -
T
= 125 °C - 26 -
J
= 15 A
I
F
dI
/dt = 200 A/μs
F
= 390 V
V
R
-220-
TJ = 25 °C - 2.2 -
T
= 125 °C - 4.3 -
J
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
Thermal resistance,
junction to case per leg
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
, T
T
J
Stg
R
-1.01.3
thJC
R
thJA
R
thCS
Typical socket mount - - 70
Mounting surface, flat, smooth and
greased
- 65 - 175 °C
-0.5-
-2.0- g
-0.07- oz.
Case style D
6.0
(5.0)
2
PAK 15ETL06S
-
Case style TO-262 15ETL06-1
12
(10)
kgf · cm
(lbf · in)
ns
A
μC
°C/W
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94005
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 23-Jun-10
100
10
1
0.4 0.6 0.8 1.0 1.2
1.6
I
F
- Instantaneous Forward
Current (A)
VF - Forward Voltage Drop (V)
TJ = 175 °C
T
J
= 150 °C
T
J
= 25 °C
1.4
0 100 200 300 400 500 600
I
R
- Reverse Current (µA)
VR - Reverse Voltage (V)
0.001
0.01
0.1
1
10
100
TJ = 100 °C
TJ = 175 °C
TJ = 150 °C
T
J
= 125 °C
TJ = 25 °C
TJ = 50 °C
TJ = 75 °C
VS-15ETL06SPbF, VS-15ETL06-1PbF
Ultralow VF Hyperfast Rectifier for
Discontinuous Mode PFC, 15 A FRED Pt
Vishay Semiconductors
®
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
100
Document Number: 94005 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 23-Jun-10 DiodesAmericas@vishay.com
10
1
0.1
Thermal Impedance (°C/W)
-
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1
TJ = 25 °C
- Junction Capacitance (pF)
T
C
10
0 100 200 300 400 500 600
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
D = 0.50
D = 0.20
D = 0.10
D = 0.05
Single pulse
(thermal resistance)
D = 0.02
D = 0.01
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
Characteristics
P
DM
t
1
t
2
.
1/t2
+ T
thJC
C
.
10