VS-15ETH06SPbF, VS-15ETH06-1PbF
Vishay High Power Products
S-15ETH06SPbFVS-15ETH06-1PbF
Base
cathode
2
1
N/C
D2PAK
3
Anode
PRODUCT SUMMARY
trr (typical) 22 ns
I
F(AV)
V
R
Hyperfast Rectifier, 15 A FRED Pt
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Single die center tap module
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Halogen-free according to IEC 61249-2-21 definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
ac-to-dc section of SMPS, inverters or as freewheeling
diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
N/C
1
TO-262
15 A
600 V
2
3
Anode
®
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage V
Average rectified forward current I
Peak repetitive forward current I
Operating junction and storage temperatures T
F(AV)
FSM
, T
J
RRM
TC = 140 °C 15
TJ = 25 °C 120
FM
Stg
600 V
ANon-repetitive peak surge current I
30
- 65 to 175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
Document Number: 94003 For technical questions, contact: diodestech@vishay.com
Revision: 11-Mar-10 1
V
,
BR
V
R
IR = 100 μA 600 - -
R
IF = 15 A - 1.8 2.2
F
I
= 15 A, TJ = 150 °C - 1.3 1.6
F
VR = VR rated - 0.2 50
T
= 150 °C, VR = VR rated - 30 500
J
VR = 600 V - 20 - pF
T
Measured lead to lead 5 mm from package body - 8.0 - nH
S
V
μA
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VS-15ETH06SPbF, VS-15ETH06-1PbF
Vishay High Power Products
Hyperfast Rectifier,
15 A FRED Pt
®
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - 22 30
= 15 A, dIF/dt = 100 A/μs, VR = 30 V - 28 35
I
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
rr
rr
RRM
rr
F
T
= 25 °C
J
= 125 °C - 75 -
T
J
TJ = 25 °C - 3.5 -
T
= 125 °C - 7 -
J
= 15 A
I
F
dI
/dt = 200 A/μs
F
= 390 V
V
R
-29-
TJ = 25 °C - 57 -
T
= 125 °C - 300 -
J
-51-ns
-20- A
- 580 - nC
TJ = 125 °C
= 15 A
I
F
dI
/dt = 800 A/μs
F
= 390 V
V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
Thermal resistance,
junction to case per leg
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
, T
T
J
Stg
R
-1.01.3
thJC
R
thJA
R
thCS
Typical socket mount - - 70
Mounting surface, flat, smooth and
greased
- 65 - 175 °C
-0.5-
-2.0- g
-0.07- oz.
Case style D
6.0
(5.0)
2
PAK 15ETH06S
-
Case style TO-262 15ETH06-1
12
(10)
kgf · cm
(lbf · in)
ns
A
μC
°C/W
www.vishay.com For technical questions, contact: diodestech@vishay.com
Document Number: 94003
2 Revision: 11-Mar-10
VS-15ETH06SPbF, VS-15ETH06-1PbF
100
10
Current (A)
- Instantaneous Forward
F
I
1
0.5 1.0 1.5 2.0 2.5 3.0
VF - Forward Voltage Drop (V)
TJ = 175 °C
= 150 °C
T
J
= 25 °C
T
J
Hyperfast Rectifier,
15 A FRED Pt
®
1000
100
10
0.1
0.01
- Reverse Current (µA)
R
I
0.001
Vishay High Power Products
TJ = 175 °C
TJ = 150 °C
= 125 °C
T
J
1
0
0 100 200 300 400 500 600
TJ = 100 °C
= 25 °C
T
J
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
100
TJ = 25 °C
- Junction Capacitance (pF)
T
C
10
0 100 200 300 400 500 600
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
D = 0.50
0.1
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1
Single pulse
(thermal resistance)
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
P
DM
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
1/t2
t
1
thJC
t
2
.
+ T
C
.
10
Document Number: 94003 For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 11-Mar-10 3