VS-15ETH03SPbF, VS-15ETH03-1PbF
Vishay High Power Products
S-15ETH03SPbF
Base
cathode
2
1
N/C
D2PAK
3
Anode
PRODUCT SUMMARY
t
rr
I
F(AV)
V
R
Hyperfast Rectifier, 15 A FRED Pt
VS-15ETH03-1PbF
2
1
N/C
TO-262
3
Anode
40 ns
15 A
300 V
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Halogen-free according to IEC 61249-2-21
definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
DESCRIPTION/APPLICATIONS
Vishay HPP’s 300 V series are the state of the art hyperfast
recovery rectifiers designed with optimized performance of
forward voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, dc-to-dc converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
®
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Repetitive peak reverse voltage V
Average rectified forward current I
Non-repetitive peak surge current I
Operating junction and storage temperatures T
F(AV)
FSM
, T
J
RRM
TC = 142 °C 15
TJ = 25 °C 140
Stg
300 V
A
- 65 to 175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
Document Number: 94001 For technical questions, contact: diodestech@vishay.com
Revision: 11-Mar-10 1
,
V
BR
V
R
IR = 100 μA 300 - -
R
IF = 15 A - 1.05 1.25
F
I
= 15 A, TJ = 125 °C - 0.85 1.00
F
VR = VR rated - 0.05 40
T
= 125 °C, VR = VR rated - 12 400
J
VR = 300 V - 45 - pF
T
Measured lead to lead 5 mm from package body - 8 - nH
S
V
μA
www.vishay.com
VS-15ETH03SPbF, VS-15ETH03-1PbF
Vishay High Power Products
Hyperfast Rectifier,
15 A FRED Pt
®
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - - 40
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
rr
= 25 °C
J
T
= 125 °C - 45 -
J
TJ = 25 °C - 2.4 -
T
= 125 °C - 6.1 -
J
= 15 A
I
F
dI
/dt = - 200 A/μs
F
V
= 200 V
R
-32-
TJ = 25 °C - 38 -
T
= 125 °C - 137 -
J
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
Thermal resistance,
junction to case per leg
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
, T
T
J
Stg
- 1.02 2.0
R
thJC
Typical socket mount - - 70
R
thJA
R
thCS
Mounting surface, flat, smooth
and greased
- 65 - 175 °C
-0.2-
-2.0- g
-0.07- oz.
6.0
(5.0)
2
Case style D
PAK 15ETH03S
Case style TO-262 15ETH03-1
12
(10)
kgf · cm
(lbf · in)
nsT
A
nC
°C/W
www.vishay.com For technical questions, contact: diodestech@vishay.com Document Number: 94001
2 Revision: 11-Mar-10
VS-15ETH03SPbF, VS-15ETH03-1PbF
100
10
Current (A)
- Instantaneous Forward
F
I
1
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VF - Forward Voltage Drop (V)
TJ = 175 °C
= 125 °C
T
J
= 25 °C
T
J
Hyperfast Rectifier,
15 A FRED Pt
®
1000
100
10
0.1
- Reverse Current (µA)
R
I
0.01
0.001
Vishay High Power Products
TJ = 175 °C
TJ = 150 °C
= 125 °C
T
J
1
0 50 100 150 200 250 300
TJ = 100 °C
= 25 °C
T
J
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
100
- Junction Capacitance (pF)
T
C
10
0 50 100 150 200 250 300
TJ = 25 °C
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
P
DM
D = 0.50
0.1
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1
Single pulse
(thermal resistance)
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
1/t2
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
t
1
thJC
t
2
.
+ T
C
.
Document Number: 94001 For technical questions, contact: diodestech@vishay.com www.vishay.com
Revision: 11-Mar-10 3