VISHAY VN0610L, VN10KLS, VN2222L Technical data
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VN0610L, VN10KLS, VN2222L
N-Channel 60-V (D-S) MOSFETs with Zener Gate
PRODUCT SUMMARY
Part Number V
VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27
VN10KLS
VN2222L 7.5 @ VGS = 10 V 0.6 to 2.5 0.23
FEATURES BENEFITS APPLICATIONS
D Zener Diode Input Protected
D Low On-Resistance: 3 W
D Ultralow Threshold: 1.2 V
D Low Input Capacitance: 38 pF
D Low Input and Output Leakage
(BR)DSS
Min (V)
60
V
r
Max (W)
DS(on)
5 @ VGS = 10 V 0.8 to 2.5 0.31
D Extra ESD Protection
D Low Offset Voltage
D Low-Voltage Operation
D High-Speed, Easily Driven
D Low Error Voltage
(V) ID (A)
GS(th)
D Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
D Inductive Load Drivers
Vishay Siliconix
Device Marking
S
G
D
TO-226AA
(TO-92)
1
2
3
Top View
VN2222L
Device Marking
Front View
Front View
VN0610L
“S” VN
0610L
xxyy
VN2222L
“S” VN
2222L
xxyy
“S” = Siliconix Logo
xxyy = Date Code
TO-92S
S
G
D
1
2
3
Top View
VN10KLSVN0610L
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Current
Power Dissipation
Thermal Resistance, Junction-to-Ambient R
Operating Junction and Storage Temperature Range TJ, T
Notes
a. Pulse width limited by maximum junction temperature.
a
_
TA= 25_C
TA= 100_C
TA= 25_C
TA= 100_C
I
I
DM
P
thJA
DS
GS
D
D
stg
VN2222L
VN0610L
60 60
15/–0.3 15/–0.3
0.27 0.31
0.17 0.20
1 1.0
0.8 0.9
0.32 0.4
156 139
–55 to 150
Device Marking
Front View
VN10KLS
“S” VN
10KLS
xxyy
“S” = Siliconix Logo
xxyy = Date Code
VN10KLS Unit
_C/W
_C
V
A
W
Document Number: 70213
S-04279—Rev. F, 16-Jul-01
www.vishay.com
11-1
VN0610L, VN10KLS, VN2222L
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
VN0610L
VN10KLS
Limits
VN2222L
Parameter Symbol
Test Conditions
TypaMin Max Min Max Unit
Static
Drain-Source Breakdown Voltage V
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Common Source Output Conductance
b
b
b
b
(BR)DSS
GS(th)
GSS
DSS
I
D(on)
r
DS(on)
g
fs
g
os
VGS = 0 V, ID = 100 mA
VDS = VGS, ID = 1 mA 1.2 0.8 2.5 0.6 2.5
VDS = 0 V, VGS = 15 V 1 100 100 nA
VDS = 48 V, VGS = 0 V 10 10
TJ = 125_C
VDS = 10 V, VGS = 10 V 1 0.75 0.75 A
VGS = 5 V, ID = 0.2 A 4 7.5 7.5
VGS = 10 V, ID = 0.5 A 3 5 7.5
TJ = 125_C
VDS = 10 V, ID = 0.5 A 300 100 100
VDS = 7.5 V, ID = 0.05 A 0.2
120 60 60
500 500
5.6 9 13.5
V
mA
W
mS
Dynamic
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Switching
Turn-On Time t
Turn-Off Time t
Notes
a. For DESIGN AID ONLY, not subject to production testing. VNDP06
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
c
oss
ON
OFF
iss
VDS = 25 V, VGS = 0 V, f = 1 MHz
rss
VDD = 15 V, RL = 23 W
ID ^ 0.6 A, V
R
= 25 W
G
GEN
= 10 V
38 60 60
16 25 25
2 5 5
7 10 10
9 10 10
pF
ns
www.vishay.com
11-2
Document Number: 70213
S-04279—Rev. F, 16-Jul-01
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