VISHAY VN0610L, VN10KLS, VN2222L Technical data

查询VN10KLS供应商

VN0610L, VN10KLS, VN2222L

N-Channel 60-V (D-S) MOSFETs with Zener Gate

PRODUCT SUMMARY

Part Number V

VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27

VN10KLS

VN2222L 7.5 @ VGS = 10 V 0.6 to 2.5 0.23

FEATURES BENEFITS APPLICATIONS

D Zener Diode Input Protected D Low On-Resistance: 3 W D Ultralow Threshold: 1.2 V D Low Input Capacitance: 38 pF D Low Input and Output Leakage

(BR)DSS

Min (V)

60

V

r

Max (W)

DS(on)

5 @ VGS = 10 V 0.8 to 2.5 0.31

D Extra ESD Protection D Low Offset Voltage D Low-Voltage Operation D High-Speed, Easily Driven D Low Error Voltage

(V) ID (A)

GS(th)

D Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc.

D Battery Operated Systems D Solid-State Relays D Inductive Load Drivers

Vishay Siliconix

Device Marking

S

G

D

TO-226AA

(TO-92)

1

2

3

Top View

VN2222L

Device Marking

Front View

VN0610L

“S” VN

0610L

xxyy

VN2222L

“S” VN

2222L

xxyy

“S” = Siliconix Logo xxyy = Date Code

TO-92S

S

G

D

1

2

3

Top View

VN10KLSVN0610L

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol

Drain-Source Voltage V Gate-Source Voltage V

Continuous Drain Current (TJ = 150_C)

Pulsed Drain Current

Power Dissipation

Thermal Resistance, Junction-to-Ambient R Operating Junction and Storage Temperature Range TJ, T

Notes a. Pulse width limited by maximum junction temperature.

a

_

TA= 25_C

TA= 100_C

TA= 25_C

TA= 100_C

I

DM

P

thJA

DS GS

D

stg

VN2222L VN0610L

60 60

15/–0.3 15/–0.3

0.27 0.31

0.17 0.20 1 1.0

0.8 0.9

0.32 0.4

156 139

–55 to 150

Device Marking

Front View

VN10KLS

“S” VN

10KLS

xxyy

“S” = Siliconix Logo xxyy = Date Code

VN10KLS Unit

_C/W

_C

V

A

W

Document Number: 70213 S-04279—Rev. F, 16-Jul-01

www.vishay.com

11-1

VN0610L, VN10KLS, VN2222L

Vishay Siliconix

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

VN0610L

VN10KLS

Limits

VN2222L

Parameter Symbol

Test Conditions

TypaMin Max Min Max Unit

Static

Drain-Source Breakdown Voltage V Gate-Threshold Voltage V Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance Common Source Output Conductance

b

(BR)DSS

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

g

fs

g

os

VGS = 0 V, ID = 100 mA

VDS = VGS, ID = 1 mA 1.2 0.8 2.5 0.6 2.5 VDS = 0 V, VGS = 15 V 1 100 100 nA VDS = 48 V, VGS = 0 V 10 10

TJ = 125_C

VDS = 10 V, VGS = 10 V 1 0.75 0.75 A

VGS = 5 V, ID = 0.2 A 4 7.5 7.5

VGS = 10 V, ID = 0.5 A 3 5 7.5

TJ = 125_C

VDS = 10 V, ID = 0.5 A 300 100 100

VDS = 7.5 V, ID = 0.05 A 0.2

120 60 60

500 500

5.6 9 13.5

V

mA

W

mS

Dynamic

Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C

Switching

Turn-On Time t Turn-Off Time t

Notes a. For DESIGN AID ONLY, not subject to production testing. VNDP06 b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature.

c

oss

ON

OFF

iss

VDS = 25 V, VGS = 0 V, f = 1 MHz

rss

VDD = 15 V, RL = 23 W

ID ^ 0.6 A, V

R

= 25 W

G

GEN

= 10 V

38 60 60 16 25 25

2 5 5

7 10 10 9 10 10

pF

ns

www.vishay.com

11-2

Document Number: 70213

S-04279—Rev. F, 16-Jul-01

VN0610L, VN10KLS, VN2222L

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Vishay Siliconix

50

VGS = 2.0 V

40

30

20

– Drain Current (mA)

D

I

10

0

0 0.4 0.8 1.2 1.6 2.0

1.9 V

1.8 V

1.6 V

1.5 V

1.4 V

1.2 V

– Drain-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V)

V

DS

Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage

0.5 VDS = 15 V

Ohmic Region Characteristics Output Characteristics for Low Gate Drive

0.4

0.3

T

= –55_C

J

125_C

25_C

1.0

0.8

0.6

0.4

– Drain Current (A)

D

I

0.2

0

012345

7

6

5

4

VGS = 10 V

250 mA

6 V

5 V

4 V

3 V

2 V

0.2

– Drain Current (A)

D

I

0.1

0

01 5

On-Resistance vs. Drain Current

0 0.2 1.0

– Drain-Source On-Resistance ( Ω )

DS(on)

r

5

4

3

2

1

0

234

VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V)

VGS = 10 V

0.4 0.6 0.8

I

– Drain Current (A)

D

– On-Resistance ( Ω )

DS(on)

r

2.25

2.00

1.75

1.50

1.25

(Normalized)

1.00

– Drain-Source On-Resistance ( Ω )

0.75

DS(on)

r

0.50

3

ID = 50 mA

2

1

0

0 4 8 12 16 20

500 mA

Normalized On-Resistance

vs. Junction Temperature

VGS = 10 V

ID = 0.5 A

0.1 A

–50 –10 150

30 70 110

T

– Junction Temperature (_C)

J

Document Number: 70213 S-04279—Rev. F, 16-Jul-01

www.vishay.com

11-3

VN0610L, VN10KLS, VN2222L

Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

10

Threshold Region Capacitance

1

TJ = 150_C

100_C

0.1

25_C

– Drain Current (mA)

D

I

0.01 0 0.25 1.75

0.5 0.75 1.0 1.25

Gate Charge Load Condition Effects on Switching

15.0

12.5

10.0

ID = 0.5 A

VDS = 30 V

–55_C

1.5

0_C

100

VGS = 0 V f = 1 MHz

80

60

C

40

C – Capacitance (pF)

iss

C

oss

20

C

rss

0

010 50

V

20 30 40

– Drain-to-Source Voltage (V)VGS – Gate-to-Source Voltage (V)

DS

100

VDD = 15 V R

= 25 W

L

= 0 to 10 V

V

GS

7.5

5.0

– Gate-to-Source Voltage (V)

GS

2.5

V

0

0 100 600

1

Duty Cycle = 0.5

0.2

0.1

0.05

0.1

0.02

Thermal Impedance

Normalized Effective Transient

0.01

0.1 1 10010 1 K

200 300 400

Q

– Total Gate Charge (pC)

g

Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)

0.01

Single Pulse

48 V

500

t1 – Square Wave Pulse Duration (sec)

10

t – Switching Time (ns)

1

0.1 0.5 1.0 I

– Drain Current (A)

D

Notes:

P

DM

t

1

t

2

t

thJA

t

thJA

1 2

(t)

= 156_C/W

1. Duty Cycle, D =

2. Per Unit Base = R

3. TJM – TA = PDMZ

t

d(off)

t

d(on)

10 K

t

f

t

r

www.vishay.com

11-4

Document Number: 70213

S-04279—Rev. F, 16-Jul-01

VISHAY VN0610L, VN10KLS, VN2222L Technical data

Specifications and Main Features

Frequently Asked Questions

User Manual