TELUX™ LED
Description
The TELUX™ series is a clear, non diffused LED for
high end applications where supreme luminous flux is
required.
It is designed in an industry standard 7.62 mm square
package utilizing highly developed InGaN technology.
The supreme heat dissipation of TELUX™ allows
applications at high ambient temperatures.
All packing units are binned for luminous flux and
color to achieve best homogenous light appearance
in application.
VLWW9900
Vishay Semiconductors
16 012
Features
• Utilizing InGaN technology
• High luminous flux
• Supreme heat dissipation: R
• High operating temperature: T
thJP
is 90 K/W
+ 100 °C
j
e3
Applications
• Exterior lighting
• Dashboard illumination
• Tail-, Stop - and Turn Signals of motor vehicles
• Replaces incandescent lamps
• Packed in tubes for automatic insertion
• Luminous flux and color categorized for each tube
• Small mechanical tolerances allow precise usage
of external reflectors or lightguides
• ESD-withstand voltage:
> 1 kV acc. to MIL STD 883 D, Method 3015.7
• Lead (Pb)-free device
• RoHS compliant
Parts Table
Par t Color, Luminous Intensity Angle of Half Intensity (± ϕ) Technology
VLWW9900 White, Ø
> 1500 mlm 45° InGaN / TAG on SiC
V
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
VLWW9900
Parameter Test condition Symbol Val ue Unit
Reverse voltage I
DC Forward current T
Surge forward current t
Power dissipation P
Junction temperature T
Operating temperature range T
Storage temperature range T
Soldering temperature t ≤ 5 s, 1.5 mm from body preheat temperature
Thermal resistance junction/ambient
Thermal resistance junction/pin R
with cathode heatsink of 70 mm
= 10 µA V
R
≤ 50 °C I
amb
≤ 10 µs I
p
100 °C/ 30 sec.
2
R
F
FSM
amb
stg
T
sd
thJA
thJP
R
V
j
5V
50 mA
0.1 A
255 mW
100 °C
- 40 to + 100 °C
- 40 to + 100 °C
260 °C
200 K/W
90 K/W
Document Number 81260
Rev. 1.0, 27-Jan-06
www.vishay.com
1
VLWW9900
Vishay Semiconductors
Optical and Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
White
VLWW9900
Parameter Test condition Symbol Par t Min Ty p . Max Unit
Total flux I
Luminous intensity/Total flux I
Color temperature I
Angle of half intensity I
Total included angle 90 % of Total Flux Captured ϕ 75 deg
Forward voltage I
Reverse voltage I
Junction capacitance V
= 50 mA, R
F
= 50 mA, R
F
= 50 mA, R
F
= 50 mA, R
F
= 50 mA, R
F
= 10 µA V
R
= 0, f = 1 MHz C
R
Chromaticity Coordinate Classification
Group X Y
VLWW9900 min max min max
3a 0.2900 0.3025 Y = 1.4x - 0.121 Y = 1.4x - 0.071
3b 0.3025 0.3150 Y = 1.4x - 0.121 Y = 1.4x - 0.071
3c 0.2900 0.3025 Y = 1.4x - 0.171 Y = 1.4x - 0.121
3d 0.3025 0.3150 Y = 1.4x - 0.171 Y = 1.4x - 0.121
4a 0.3150 0.3275 Y = 1.4x - 0.121 Y = 1.4x - 0.071
4b 0.3275 0.3400 Y = 1.4x - 0.121 Y = 1.4x - 0.071
4c 0.3150 0.3275 Y = 1.4x - 0.171 Y = 1.4x - 0.121
4d 0.3275 0.3400 Y = 1.4x - 0.171 Y = 1.4x - 0.121
5a 0.3400 0.3525 Y = 1.4x - 0.121 Y = 1.4x - 0.071
5b 0.3525 0.3650 Y = 1.4x - 0.121 Y = 1.4x - 0.071
5c 0.3400 0.3525 Y = 1.4x - 0.171 Y = 1.4x - 0.121
5d 0.3525 0.3650 Y = 1.4x - 0.171 Y = 1.4x - 0.121
tolerance ± 0.05
= 200 °K/W Ø
thJA
= 200 °K/W IV/Ø
thJA
= 200 °K/W T
thJA
= 200 °K/W ϕ ± 45 deg
thJA
= 200 °K/W V
thJA
VLWW9900 1500 2200 mlm
V
V
K
F
R
j
510 V
0.8 mcd/mlm
5500 K
4.3 5.2 V
50 pF
Luminous Flux Classification
Group Luminous Intensity (mlm)
C 1500 2400
D 2000 3000
E 2500 3600
F 3000 4200
www.vishay.com
2
min max
Document Number 81260
Rev. 1.0, 27-Jan-06
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
VLWW9900
Vishay Semiconductors
60
50
40
30
20
F
10
I-Forward Current (mA)
16067
R
= 200 K/W
thJA
0
0 8020 40 60 100 120
T
- Ambient Temperature (°C)
amb
Figure 1. Forward Current vs. Ambient Temperature for InGaN
0°
1.0
0.9
0.8
0.7
v rel
I – Relative Luminous Intensity
16006
0.4 0.2 0 0.2 0.4
0.6
10° 20°
30°
40°
50°
60°
70°
80°
0.6
Figure 2. Rel. Luminous Intensity vs. Angular Displacement
for 60° emission angle
230
220
210
200
190
thJA
RinK/W
180
170
160
0 50 100 150 200 250 300
16009
Cathode Padsize in mm
Padsize 8 mm
per Anode Pin
2
2
Figure 4. Thermal Resistance Junction Ambient vs. Cathode
Padsize
100
90
White
80
70
60
50
40
30
20
F
I-Forward Current (mA)
10
0
2.5 3.0 3.5 4.0 4.5 5.0 5.5
16062
V
-Forward Voltage (V)
F
Figure 5. Forward Current vs. Forward Voltage
100
90
80
70
60
50
40
30
20
% Tot al L uminousFlux
10
0
0 255075100125
16005
Total Included Angle (Degrees)
Figure 3. Percentage Total Luminous Flux vs. Total Included Angle
for 60° emission angle
Document Number 81260
Rev. 1.0, 27-Jan-06
1.8
1.6
1.4
1.2
1.0
0.8
0.6
- RelativeLuminousFlux
0.4
V rel
Φ
0.2
0.0
- 40 - 20 0 20 40 60 80100
16065
White
T
- Ambient Temperature (°C)
amb
IF=50mA
Figure 6. Rel. Luminous Flux vs. Ambient Temperature
www.vishay.com
3
VLWW9900
Vishay Semiconductors
White
1.0
0.345
0.340
0.335
0.330
0.325
White
X
Y
Spec
I - Specific LuminousFlux
0.1
110100
16063
I
-Forward Current (mA)
F
Figure 7. Specific Luminous Flux vs. Forward Current
10.00
White
1.00
0.10
V rel
I - RelativeLuminousFlux
0.01
110100
I
16064
-Forward Current (mA)
F
Figure 8. Relative Luminous Flux vs. Forward Current
0.320
f - Chromaticity coordinate shift (x,y)
0.315
0605040302010
16198
I
- Forward Current (mA)
F
Figure 10. Chromaticity Coordinate Shift vs. Forward Current
0.44
0.42
0.40
0.38
0.36
0.34
0.32
0.30
0.28
Y and Y’ Coordinates
0.26
0.24
0.22
0.28 0.29 0.30 0.31 0.32 0.33 0.34 0.35 0.36 0.37
19037
3b
3a
3d
3c
4b
4a
4d
4c
X Coordinates
5b
5a
5d
5c
Figure 11. Coordinates of Colorgroups
V rel
I - RelativeLuminous Intensity
16071
Figure 9. Relative Intensity vs. Wavelength
www.vishay.com
4
1.2
1.1
IF=50mAWhite
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
400 450 500 550 600 650 700 750 800
λ
- Wavelength (nm)
Document Number 81260
Rev. 1.0, 27-Jan-06
Package Dimensions in mm
VLWW9900
Vishay Semiconductors
Document Number 81260
Rev. 1.0, 27-Jan-06
16004
www.vishay.com
5
VLWW9900
Vishay Semiconductors
Barcode-Product-Label
106
A
H
37
B C D E F
G
18999
A) Type of component
B) Manufacturing plant
C) SEL - Selection Code (Bin)
Digit 1 - code for Luminous Flux group
Digit 2 - code for Dominant Wavelength group
Digit 3 - code for Forward Voltage group
D) Date Code year/week
E) Day Code (e. g. 5: Friday)
F) Batch No.
G) Total quantity
H) Company code
www.vishay.com
6
Document Number 81260
Rev. 1.0, 27-Jan-06
VLWW9900
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 81260
Rev. 1.0, 27-Jan-06
www.vishay.com
7
Loading...