TELUX™ LED
Description
The TELUX™ series is a clear, non diffused LED for
high end applications where supreme luminous flux is
required.
It is designed in an industry standard 7.62 mm square
package utilizing highly developed InGaN technology.
The supreme heat dissipation of TELUX™ allows
applications at high ambient temperatures.
All packing units are binned for luminous flux and
color to achieve best homogenous light appearance
in application.
VLWW960.
Vishay Semiconductors
16 012
Features
• Utilizing InGaN technology
• High luminous flux
• Supreme heat dissipation: R
• High operating temperature: T
thJP
is 90 K/W
+ 100 °C
j
e3
Applications
• Exterior lighting
• Dashboard illumination
• Tail-, Stop - and Turn Signals of motor vehicles
• Replaces incandescent lamps
• Packed in tubes for automatic insertion
• Luminous flux and color categorized for each tube
• Small mechanical tolerances allow precise usage
of external reflectors or lightguides
• ESD-withstand voltage:
> 1 kV acc. to MIL STD 883 D, Method 3015.7
• Lead (Pb)-free device
• RoHS compliant
Parts Table
Par t Color, Luminous Intensity Angle of Half Intensity (±ϕ) Technology
VLWW9600 White, Ø
VLWW9601 White, Ø
> 1500 mlm 30° InGaN / TAG on SiC
V
> 2000 mlm 30° InGaN / TAG on SiC
V
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
VLWW960.
Parameter Test condition Symbol Val ue Unit
Reverse voltage I
DC Forward current T
Surge forward current t
Power dissipation P
Junction temperature T
Operating temperature range T
Storage temperature range T
Soldering temperature t ≤ 5 s, 1.5 mm from body preheat temperature
Thermal resistance junction/ambient
Thermal resistance junction/pin R
Document Number 81254
Rev. 1.0, 12-Jan-06
with cathode heatsink of 70 mm
= 10 µA V
R
≤ 50 °C I
amb
≤ 10 µs I
p
100 °C/ 30 sec.
2
R
F
FSM
amb
stg
T
sd
thJA
thJP
R
V
j
5V
50 mA
0.1 A
255 mW
100 °C
- 40 to + 100 °C
- 40 to + 100 °C
260 °C
200 K/W
90 K/W
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VLWW960.
Vishay Semiconductors
Optical and Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
White
VLWW960.
Parameter Test condition Symbol Par t Min Ty p . Max Unit
Total flux I
Luminous intensity/Total flux I
Color temperature I
Angle of half intensity I
Total included angle 90 % of Total Flux Captured ϕ 75 deg
Forward voltage I
Reverse voltage I
Junction capacitance V
= 50 mA, R
F
= 50 mA, R
F
= 50 mA, R
F
= 50 mA, R
F
= 50 mA, R
F
= 10 µA V
R
= 0, f = 1 MHz C
R
Chromaticity Coordinate Classification
Group X Y
VLWW9600 VLWW9601 min max min max
3a 0.2900 0.3025 Y = 1.4x - 0.121 Y = 1.4x - 0.071
3b 0.3025 0.3150 Y = 1.4x - 0.121 Y = 1.4x - 0.071
3c 0.2900 0.3025 Y = 1.4x - 0.171 Y = 1.4x - 0.121
3d 0.3025 0.3150 Y = 1.4x - 0.171 Y = 1.4x - 0.121
4a 0.3150 0.3275 Y = 1.4x - 0.121 Y = 1.4x - 0.071
4b 0.3275 0.3400 Y = 1.4x - 0.121 Y = 1.4x - 0.071
4c 4c 0.3150 0.3275 Y = 1.4x - 0.171 Y = 1.4x - 0.121
4d 4d 0.3275 0.3400 Y = 1.4x - 0.171 Y = 1.4x - 0.121
5a 0.3400 0.3525 Y = 1.4x - 0.121 Y = 1.4x - 0.071
5b 0.3525 0.3650 Y = 1.4x - 0.121 Y = 1.4x - 0.071
5c 5c 0.3400 0.3525 Y = 1.4x - 0.171 Y = 1.4x - 0.121
5d 5d 0.3525 0.3650 Y = 1.4x - 0.171 Y = 1.4x - 0.121
tolerance ± 0.05
= 200 °K/W Ø
thJA
= 200 °K/W IV/Ø
thJA
= 200 °K/W T
thJA
= 200 °K/W ϕ ± 30 deg
thJA
= 200 °K/W V
thJA
VLWW9600 1500 2200 mlm
V
VLWW9601 2000 3600 mlm
V
K
F
R
j
510 V
0.8 mcd/mlm
5500 K
4.3 5.2 V
50 pF
Luminous Flux Classification
Group Luminous Intensity (mlm)
C 1500 2400
D 2000 3000
E 2500 3600
F 3000 4200
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min max
Document Number 81254
Rev. 1.0, 12-Jan-06
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
VLWW960.
Vishay Semiconductors
60
50
40
30
20
F
10
I-Forward Current (mA)
16067
R
= 200 K/W
thJA
0
0 8020 40 60 100 120
T
- Ambient Temperature (°C)
amb
Figure 1. Forward Current vs. Ambient Temperature for InGaN
0°
1.0
0.9
0.8
0.7
v rel
I – Relative Luminous Intensity
16006
0.4 0.2 0 0.2 0.4
0.6
10° 20°
30°
40°
50°
60°
70°
80°
0.6
Figure 2. Rel. Luminous Intensity vs. Angular Displacement
for 60° emission angle
230
220
210
200
190
thJA
RinK/W
180
170
160
0 50 100 150 200 250 300
16009
Cathode Padsize in mm
Padsize 8 mm
per Anode Pin
2
2
Figure 4. Thermal Resistance Junction Ambient vs. Cathode
Padsize
100
90
White
80
70
60
50
40
30
20
F
I-Forward Current (mA)
10
0
2.5 3.0 3.5 4.0 4.5 5.0 5.5
16062
V
-Forward Voltage (V)
F
Figure 5. Forward Current vs. Forward Voltage
100
90
80
70
60
50
40
30
20
% Tot al L uminousFlux
10
0
0 255075100125
16005
Total Included Angle (Degrees)
Figure 3. Percentage Total Luminous Flux vs. Total Included Angle
for 60° emission angle
Document Number 81254
Rev. 1.0, 12-Jan-06
1.8
1.6
1.4
1.2
1.0
0.8
0.6
- RelativeLuminousFlux
0.4
V rel
Φ
0.2
0.0
- 40 - 20 0 20 40 60 80100
16065
White
T
- Ambient Temperature (°C)
amb
IF=50mA
Figure 6. Rel. Luminous Flux vs. Ambient Temperature
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