VISHAY VLMS31 Technical data

19225

High Intensity SMD LED

FEATURES

• SMD LED with exceptional brightness

• Luminous intensity categorized

• Compatible with automatic placement
equipment

• EIA and ICE standard package

• Compatible with IR Reflow, vapor phase and wave
solder processes according to CECC 00802 and
J-STD-020C

• Available in 8 mm tape

• Low profile package

• Non-diffused lens: excellent for coupling to light
pipes and backlighting

• Low power consumption

• Luminous intensity ratio in one packaging unit
I

Vmax/IVmin

• Lead (Pb)-free device

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

• Preconditioning acc. to JEDEC Level 2a

• ESD-withstand voltage:
up to 2 kV according to JESD22-A114-B

≤ 1.6

VLMS31..

Vishay Semiconductors

e3

DESCRIPTION

The package of the VLMS31.. is the PLCC-2.
It consists of a lead frame which is embedded in a

white thermoplast. The reflector inside this package is
filled up with clear epoxy.

APPLICATIONS

• Automotive: Backlighting in dashboards and
switches

• Telecommunication: Indicator and backlighting in
telephone and fax

• Indicator and backlight for audio and video equip­ment

• Indicator and backlight in office equipment

• Flat backlight for LCDs, switches and symbols

• General use

PARTS TABLE

PART COLOR, LUMINOUS INTENSITY ANGLE OF HALF INTENSITY (± ϕ) TECHNOLOGY

= (4.5 to 11.2) mcd

VLMS31J1K2-GS08

VLMS31J1K2-GS18

VLMS31J1L2-GS08

VLMS31J1L2-GS18

VLMS31K1L2-GS08

VLMS31K1L2-GS18

Red, I

V

Red, I

= (4.5 to 11.2) mcd

V

Red, I

= (4.5 to 18) mcd

V

Red, I

= (4.5 to 18) mcd

V

Red, I

= (7.1 to 18) mcd

V

Red, I

= (7.1 to 18) mcd

V

60° GaAsP on GaP

60° GaAsP on GaP

60° GaAsP on GaP

60° GaAsP on GaP

60° GaAsP on GaP

60° GaAsP on GaP

Document Number 81327
Rev. 1.0, 17-Oct-06

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VLMS31..

Vishay Semiconductors

ABSOLUTE MAXIMUM RATINGS1), VLMS31..

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Reverse voltage

DC Forward current

Surge forward current

2)

≤ 85 °C I

T

amb

≤ 10 µs I

t

p

Power dissipation

Junction temperature

Operating temperature range

Storage temperature range

Thermal resistance junction/
ambient

Note:

1)

T

= 25 °C unless otherwise specified

amb

2)

Driving LED in reverse direction is suitable for short term application

mounted on PC board

(pad size > 16 mm

2

)

OPTICAL AND ELECTRICAL CHARACTERISTICS1), VLMS31.., RED

PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT

Luminous intensity

2)

Dominant wavelength

Peak wavelength

Angle of half intensity

Forward voltage

Reverse voltage

Junction capacitance

Note:

1)

T

= 25 °C unless otherwise specified

amb

2)

in one Packing Unit I

Vmax/IVmin

≤ 2.0

IF = 10 mA

VLMS31J1K2

VLMS31J1L2

VLMS31K1L2

I

= 10 mA λ

F

= 10 mA λ

I

F

= 10 mA

I

F

I

= 20 mA V

F

= 10 μAV

I

R

= 0, f = 1 MHz C

V

R

T

R

V

FSM

P

T

amb

T

thJA

F

stg

R

6V

30 mA

0.1 A

V

j

80 mW

100 °C

- 40 to + 100 °C

- 40 to + 100 °C

400 K/W

I

V

I

V

I

V

d

p

4.5 11.2 mcd

4.5 18 mcd

7.1 18 mcd

624 630 638 nm

643 nm

ϕ ± 60 deg

F

R

j

5V

1.9 2.6 V

15 pF

LUMINOUS INTENSITY CLASSIFICATION

GROUP LIGHT INTENSITY [MCD]

STANDARD OPTIONAL MIN MAX

J 1 4.5 5.6

2 5.6 7.1

K 1 7.1 9.0

2 9.0 11.2

L 1 11.2 14

2 14 18

Note:

Luminous intensity is tested at a current pulse duration of 25 ms and
an accuracy of ± 11 %.

The above type numbers represent the order groups which include
only a few brightness groups. Only one group will be shipped on
each reel (there will be no mixing of two groups on each reel).

In order to ensure availability, single brightness groups will not be or­derable.

In a similar manner for colors where wavelength groups are mea­sured and binned, single wavelength groups will be shipped on any
one reel.

In order to ensure availability, single wavelength groups will not be
orderable.

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2

CROSSING TABLE

VISHAY OSRAM

VLMS31J1K2 LST670-J1K2
VLMS31J1L2 LST670-J1L2
VLMS31K1L2 LST670-K1L2

Document Number 81327

Rev. 1.0, 17-Oct-06

TYPICAL CHARACTERISTICS

p

T

= 25 °C unless otherwise specified

amb

VLMS31..

Vishay Semiconductors

60

50

40

30

20

- Forward Current (mA)

F

I

10

95 10905

0

T

- Ambient Temperature (°C)

amb

100806040200

Figure 1. Forward Current vs. Ambient Temperature

10000

T

< 60 °C

tp/T = 0.005

1000

100

0.2

0.5

DC

10

F

I - Forward Current (mA)

1

0.01 0.1 1 10

95 9985

0.01

0.1

t

- Pulse Length (ms)

amb

0.02

0.05

100

Figure 2. Forward Current vs. Pulse Length

1.2

Super Red

1.0

0.8

0.6

0.4

0.2

Vrel

I –Relative Luminous Intensity

0.0
550 590 630 670 710 750

16639

– Wavelength (nm)

Figure 4. Relative Luminous Intensity vs. Wavelength

100

Super Red

10

1

F

I - Forward Current (mA)

0.1
012345

16634

V

-Forward Voltage (V)

F

Figure 5. Forward Current vs. Forward Voltage

0°

10° 20°

1.0

0.9

0.8

- Relative Luminous Intensity

0.7

V rel

I

95 10319

0.4 0.2 0 0.2 0.4

0.6

0.6

Figure 3. Rel. Luminous Intensity vs. Angular Displacement

Document Number 81327
Rev. 1.0, 17-Oct-06

30°

40°

50°

60°

70°

80°

10.00

Super Red

1.00

0.10

– Relative Luminous Intensity

Vrel

I

0.01

1.00 10.00 100.00

I

16638

– Forward Current (mA)

F

Figure 6. Relative Luminous Intensity vs. Forward Current

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