TCST110. up to TCST230.
0.6
1
0.4
0.5
0.2
0.25
Transmissive Optical Sensor with Phototransistor Output
Description
This device has a compact construction where the
emitting-light sources and the detectors are located faceto-face on the same optical axis.
The operating wavelength is 950
consists of a phototransistor.
nm. The detector
B)
14805
Applications
Contactless optoelectronic switch, control and counter
Features
D
Compact construction
D
No setting efforts
D
Polycarbonate case protected against ambient light
D
2 case variations
D
3 different apertures
Pin Connection
+
E
A)
14806
95 10796
D
+
7.6
0.3”
D
CTR selected in groups (regarding fourth number of
type designation)
Order Instruction
Part Number Resolution (mm) Aperture (mm)
TCST1103
TCST2103
TCST1202
TCST2202
TCST1300
TCST2300
TELEFUNKEN Semiconductors
Rev . A4, 16-Apr-98
A)
B)
A)
B)
A)
B)
1 (8)
TCST110. up to TCST230.
Absolute Maximum Ratings
Input (Emitter)
Parameters T est Conditions Symbol Value Unit
Reverse voltage V
Forward current I
Forward surge current tp ≤ 10 ms I
Power dissipation T
Junction temperature T
Output (Detector)
Parameters T est Conditions Symbol Value Unit
Collector emitter voltage V
Emitter collector voltage V
Collector current I
Collector peak current tp/T = 0.5, tp ≤ 10 ms I
Power dissipation T
Junction temperature T
≤ 25°C P
amb
≤ 25°C P
amb
R
F
FSM
V
CEO
ECO
C
CM
v
6 V
60 mA
3 A
100 mW
j
100 °C
70 V
7 V
100 mA
200 mA
150 mW
j
100 °C
Coupler
Parameters T est Conditions Symbol Value Unit
T otal power dissipation T
Operating temperature range T
Storage temperature range T
Soldering temperature 2 mm from case, t ≤ 5 s T
≤ 25°C P
amb
tot
amb
stg
sd
250 mW
–55 to +85 °C
–55 to +100 °C
260 °W
2 (8)
TELEFUNKEN Semiconductors
Rev . A4, 16-Apr-98
TCST110. up to TCST230.
Electrical Characteristics
T
= 25°C
amb
Input (Emitter)
Parameters T est Conditions T ype Symbol Min. T yp. Max. Unit
Forward voltage IF = 60 mA V
Junction
capacitance
VR = 0,
f = 1 MHz
F
C
j
Output (Detector)
Parameters T est Conditions T ype Symbol Min. T yp. Max. Unit
Collector emitter
IC = 1 mA V
CEO
70 V
voltage
Emitter collector
IE = 10 mA V
ECO
7 V
voltage
Collector dark
current
VCE = 25 V,
IF = 0, E = 0
I
CEO
Coupler
Parameters T est Conditions Type Symbol Min. T yp. Max. Unit
Current transfer
ratio
Collector current V
Collector emitter
saturation voltage
Collector emitter
saturation voltage
Collector emitter
saturation voltage
Resolution, path of
the shutter crossing
the radiant sensitive
zone
VCE = 5 V,
IF = 20 mA
TCST1103,
TCST2103
TCST1202,
TCST2202
TCST1300,
TCST2300
= 5 V,
CE
IF = 20 mA
TCST1103,
TCST2103
TCST1202,
TCST2202
TCST1300,
TCST2300
IF = 20 mA,
IC = 1 mA
IF = 20 mA,
IC = 0.5 mA
IF = 20 mA,
IC = 0.1 mA
I
= 10/90% TCST1103,
Crel
TCST1103,
TCST2103
TCST1202,
TCST2202
TCST1300,
TCST2300
TCST2103
TCST1202,
TCST2202
TCST1300,
TCST2300
CTR
CTR
CTR
V
CEsat
V
CEsat
V
CEsat
10
5
1.25
I
C
I
C
I
C
2
1
0.25
s
s
s
1.25 1.6 V
50 pF
100 nA
20
10
2.5
4
2
0.5
0.4 V
0.4 V
0.4 V
0.6
0.4
0.2
%
%
%
mA
mA
mA
mm
mm
mm
TELEFUNKEN Semiconductors
Rev . A4, 16-Apr-98
3 (8)
TCST110. up to TCST230.
Switching Characteristics
VS = 5 V, IC = 2 mA, RL = 100
W
Parameters T est Conditions Symbol Min. T yp. Max. Unit
Turn-on time t
Turn-off time t
I
0
RG= 50
t
p
= 0.01
T
F
W
I
F
tp= 50 ms
50
W
100
W
on
off
+ 5 V
I
C
Channel I
Channel II
= 2 mA ;
10
8
Adjusted through
input amplitude
Oscilloscope
R
w
1 M
v
W
20 pF
L
C
L
m
s
m
s
95 10897
Figure 1. Test circuit
4 (8)
TELEFUNKEN Semiconductors
Rev . A4, 16-Apr-98
TCST110. up to TCST230.
Typical Characteristics (T
400
300
Coupled Device
200
Phototransistor
IR–Diode
100
tot
P – Total Power Dissipation ( mW )
0
0 30 60 90 120
95 11088
T
– Ambient Temperature ( °C )
amb
= 25°C, unless otherwise specified)
amb
150
Figure 2. Total Power Dissipation vs. Ambient Temperature
1000.0
100.0
10000
VCE=25V
I
=0
1000
100
with open Base ( nA )
CEO
I – Collector Dark Current,
95 11090
F
10
1
0255075
T
– Ambient Temperature ( °C )
amb
100
Figure 5. Collector Dark Current vs. Ambient Temperature
10.000
VCE=5V
1.000
10.0
1.0
F
I – Forward Current ( mA )
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF – Forward Voltage ( V )96 11862
Figure 3. Forward Current vs. Forward Voltage
2.0
VCE=5V
I
=20mA
F
1.5
1.0
0.5
rel
CTR – Relative Current Transfer Ratio
0
–25 0 25 50
T
95 11089
– Ambient Temperature ( °C )
amb
0.100
0.010
C
I – Collector Current ( mA )
0.001
0.1 1.0 10.0 100.0
IF – Forward Current ( mA )96 12066
Figure 6. Collector Current vs. Forward Current
10.00
1.00
0.10
C
I – Collector Current ( mA )
100
75
0.01
0.1 1.0 10.0 100.0
VCE – Collector Emitter Voltage ( V )96 12067
IF=50mA
20mA
10mA
5mA
2mA
1mA
Figure 4. Rel. Current Transfer Ratio vs. Ambient Temperature
TELEFUNKEN Semiconductors
Rev . A4, 16-Apr-98
Figure 7. Collector Current vs. Collector Emitter Voltage
5 (8)
TCST110. up to TCST230.
Typical Characteristics (T
100.0
VCE=5V
10.0
1.0
CTR – Current Transfer Ratio ( % )
0.1
0.1 1.0 10.0 100.0
IF – Forward Current ( mA )96 12068
amb
Figure 8. Current Transfer Ratio vs. Forward Current
20
m
off
on
t / t – Turn on / Turn off Time ( s )
95 11086
15
10
5
0
02 46
I
– Collector Current ( mA )
C
Non Saturated
Operation
V
=5V
S
R
=100
W
L
8
= 25°C, unless otherwise specified)
110
100
90
80
70
60
50
40
30
20
Crel
I – Relative Collector Current
10
0
–0.5–0.4–0.3–0.2 –0.1 –0.0 0.1 0.2 0.3 0.4 0.5
Figure 10. Rel. Collector Current vs. Displacement
110
100
90
80
70
60
50
t
on
t
off
10
40
30
20
Crel
I – Relative Collector Current
10
0
–0.5–0.4–0.3–0.2 –0.1 –0.0 0.1 0.2 0.3 0.4 0.5
0
0
A=1mm
s
s – Displacement ( mm )96 12005
A=0.5mm
s
s – Displacement ( mm )96 12006
Figure 9. Turn on / off Time vs. Collector Current
6 (8)
Figure 11. Rel. Collector Current vs. Displacement
110
100
90
80
70
60
50
40
30
20
Crel
I – Relative Collector Current
10
–0.5–0.4–0.3–0.2 –0.1 –0.0 0.1 0.2 0.3 0.4 0.5
0
A=0.25mm
s
0
s – Displacement ( mm )96 12007
Figure 12. Rel. Collector Current vs. Displacement
TELEFUNKEN Semiconductors
Rev . A4, 16-Apr-98
Dimensions of TCST1.0. in mm
TCST110. up to TCST230.
A*
weight: ca. 0.80 g
A*: various apertures
TCST110. with aperture 1.00 mm (0.04”)
TCST120. with aperture 0.50 mm (0.02”)
TCST130. with aperture 0.25 mm (0.01”)
Dimensions of TCST2.0. in mm
96 12094
A*
weight: ca. 0.90 g
A*: various apertures
TCST210. with aperture 1.00 mm (0.04”)
TCST220. with aperture 0.50 mm (0.02”)
TCST230. with aperture 0.25 mm (0.01”)
TELEFUNKEN Semiconductors
Rev . A4, 16-Apr-98
96 12095
7 (8)
TCST110. up to TCST230.
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol ( 1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
8 (8)
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
T elephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
TELEFUNKEN Semiconductors
Rev . A4, 16-Apr-98
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