VISHAY VEMI85AA-HGK Technical data

8-Channel EMI-Filter with ESD-Protection

VEMI85AA-HGK

Vishay Semiconductors

Features

• Ultra compact LLP3313-17L package

• Low package profile of 0.6 mm

• 8-channel EMI-filter

• Low leakage current

• Line resistance R

• Typical cut off frequency f

• ESD-protection acc. IEC 61000-4-2
± 30 kV contact discharge

= 100 Ω

S

= 100 MHz

3dB

e3

20388

1

2

3

4

5

6

7

8

± 30 kV air discharge

• Lead (Pb)-free component

• "Green" molding compound

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Marking (example only)

Dot = Pin 1 marking

YYXX

20720

YY = Type code (see table below)
XX = Date code

Ordering Information

Device name Ordering code

VEMI85AA-HGK VEMI85AA-HGK-GS08 3000 15 000

Taped units per reel

(8 mm tape on 7" reel)

Minimum order quantity

16

15

14

17

13

12

11

10

9

Package Data

Device name Package name Marking code Weight

VEMI85AA-HGK LLP3313-17L 9R 7.4 mg UL 94 V-0

Molding compound

flammability rating

Absolute Maximum Ratings

Parameter Test conditions Symbol Val ue Unit

Peak pulse current

ESD immunity

Operating temperature Junction temperature

Storage temperature

Document Number 81386

Rev. 1.4, 03-Jun-08

All I/O pin to pin 17; acc. IEC 61000-4-5;

t

= 8/20 µs; single shot

Contact discharge acc. IEC61000-4-2; 10 pulses

Air discharge acc. IEC61000-4-2; 10 pulses ± 30

For technical support, please contact: [e-mail]

p

Moisture sensitivity level Soldering conditions

MSL level 1

(according J-STD-020)

I

PPM

V

ESD

T

J

T

STG

- 40 to + 125 °C

- 55 to + 150 °C

260 °C/10 s at terminals

4A

± 30

kV

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VEMI85AA-HGK

Vishay Semiconductors

Application Note:

With the VEMI85AA-HGK 8 different signal or data lines can be filtered and clamped to ground. Due to the
different clamping levels in forward and reverse direction the clamping behaviour is Bi

As

ymmetric (BiAs).

directional and

L1

IN

L2

IN

L3

L4

L5

L6IN

L7

L8IN

IN

IN

IN

IN

1

2

3

4

5

6

7

8

16

15

14

13

12

11

10

9

The 8 independent EMI-filter are placed between

pin 1 and pin 16,
pin 2 and pin 15,
pin 3 and pin 14,
pin 4 and pin 13,
pin 5 and pin 12,
pin 6 and pin 11,
pin 7 and pin 10 and

pin 8 and pin 9.

L1

L2

L3

L4

L5

L6

L7

L8

OUT

OUT

OUT

OUT

OUT

OUT

OUT

OUT

20389

They all are connected to a common ground pin 17 on the backside of the package.

The circuit diagram of one EMI-filter-channel shows two identical Z-diodes at the input to ground and the output
to ground. These Z-diodes are characterized by the breakthrough voltage level (V
capacitance (C
Together with these capacitors and the line resistance R
pass filter. Low frequency signals (f < f
to ground through the diode capacitances C

). Below the breakthrough voltage level the Z-diodes can be considered as capacitors.

D

(Pin 1, 2, 3, 4, 5, 6, 7, 8)

20390

) pass the filter while high frequency signals (f > f

3dB

.

D

In

C

D

GND
(Pin 17)

between input and output the device works as a low

S

R

S

Out

(Pin 9, 10, 11, 12, 13, 14, 15, 16)

C

D

) and the diode

BR

) will be shorted

3dB

Each filter is symmetrical so that both ports can be used as input or output.

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For technical support, please contact: [e-mail]

Document Number 81386

Rev. 1.4, 03-Jun-08

Electrical Characteristics

Ratings at 25 °C ambient temperature unless otherwise specified

VEMI85AA-HGK

All inputs (pin 1, 2, 3, 4, 5, 6, 7 and 8) to ground (pin 17)

Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit

Protection paths Number of channels which can be protected

at I

Reverse stand off voltage

Reverse current

Reverse break down
voltage

Pos. clamping voltage

at I

= 1 A applied at the input, measured

PP

at the output; acc. IEC 61000-4-5

= I

at I

PP

PPM

= 1 µA V

R

= V

at V

R

RWM

at I

= 1 mA V

R

= 4 A applied at the input,
measured at the output; acc. IEC 61000-4-5

at I

= - 1 A applied at the input, measured

PP

Neg. clamping voltage

at the output; acc. IEC 61000-4-5

at I

= I

PP

= - 4 A applied at the input,

PPM

measured at the output; acc. IEC 61000-4-5

at V

= 0 V; f = 1 MHz C

Input capacitance

R

= 2.5 V; f = 1 MHz C

at V

R

ESD-clamping voltage at ± 30 kV ESD-pulse acc. IEC 61000-4-2

Line resistance

Cut-off frequency

Measured between input and output;

I

= 10 mA

S

= 0 V; measured in a 50 Ω system f

V

IN

N

channel

RWM

I

R

BR

V

C-out

V

C-out

V

C-out

V

C-out

V

CESD

R

3dB

VEMI85AA-HGK

Vishay Semiconductors

8 channel

5V

1µA

6V

7V

8V

- 1 V

- 1.2 V

in

in

S

90 100 110 Ω

60 pF

36 pF

7.5 V

100 MHz

Typical Characteristics

T

= 25 °C, unless otherwise specified

amb

120 %

100 %

ESD

80 %

60 %

53 %

40 %

27 %

Discharge Current I

20 %

0 %

- 10 0 10 20 30 40 50 60 70 80 90 100

20557

Figure 1. ESD Discharge Current Wave Form

acc. IEC 61000-4-2 (330 Ω/150 pF)

rise time = 0.7 ns to 1 ns

Time (ns)

8 µs to 100 %

20 µs to 50 %

Time (µs)

PPM

I

100 %

80 %

60 %

40 %

20 %

0 %

010203040

20548

Figure 2. 8/20 µs Peak Pulse Current Wave Form

acc. IEC 61000-4-5

Document Number 81386

Rev. 1.4, 03-Jun-08

For technical support, please contact: [e-mail]

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3