VISHAY VBUS051BD-HD1 Technical data

VBUS051BD-HD1

Vishay Semiconductors

Low Capacitance, Single-Line ESD-Protection Diode

Features

• Ultra compact LLP1006-2L package

• Low package height < 0.4 mm

• 1-line ESD-protection

• Low leakage current < 0.1 µA

• Low load capacitance C

= 1.3 pF

D

• ESD-protection to IEC 61000-4-2
± 15 kV contact discharge
± 15 kV air discharge

• High surge current acc. IEC61000-4-5 I

• Soldering can be checked by standard vision
inspection. No X-ray necessary

• Lead (Pb)-free component

• Pin plating NiPdAu (e4) no whisker growth

• "Green" molding compound

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

PP

e4

20855

> 3 A

2

1

20856

Marking (example only)

dot = Cathode marking

XY

21121

X = Date code
Y = Type code (see table below)

Ordering Information

Device name Ordering code

VBUS051BD-HD1 VBUS051BD-HD1-GS08 8000 8000

Taped units per reel

(8 mm tape on 7" reel)

Minimum order quantity

Package Data

Device name

VBUS051BD-HD1 LLP1006-2L A 0.72 mg UL 94 V-0

Package

name

Type
code

Weight

Molding compound

flammability rating

Moisture sensitivity level Soldering conditions

MSL level 1

(according J-STD-020)

260 °C/10 s at terminals

Absolute Maximum Ratings

Para me te r Test conditions Symbol Val ue Unit

Peak pulse current

Peak pulse power

ESD immunity

Operating temperature Junction temperature

Storage temperature

Acc. IEC 61000-4-5; t

Acc. IEC 61000-4-5; t

Contact discharge acc. IEC 61000-4-2; 10 pulses

Air discharge acc. IEC 61000-4-2; 10 pulses

= 8/20 µs; single shot I

P

= 8/20 µs; single shot P

P

V

V

T

PPM

PP

ESD

ESD

T

STG

3A

45 W

± 15 kV

± 15 kV

J

- 40 to + 125 °C

- 40 to + 150 °C

Document Number 81785

Rev. 1.2, 16-Apr-08

For technical support, please contact: [e-mail]

www.vishay.com

1

VBUS051BD-HD1

Vishay Semiconductors

Electrical Characteristics

Ratings at 25 °C, ambient temperature unless otherwise specified

VBUS051BD-HD1

Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit

Protection paths Number of line which can be protected N lines 1 lines

at I

= 0.1 µA;

Reverse working voltage

Max. reverse current

Min. reverse breakdown
voltage

Max. clamping voltage

Max. forward clamping
voltage

Line capacitance

at I

at I

PP

F

R

pin 2 to pin 1

at V

R

= V

RWM

= 5 V;

pin 2 to pin 1

at I

= 1 mA

R

pin 2 to pin 1

= 3 A; acc. IEC 61000-4-5;

pin 2 to pin 1

= 3 A; acc. IEC 61000-4-5;

pin 1 to pin 2

at V

= 0 V; f = 1 MHz;

R

pin 2 to pin 1

Application Note

The VBUS051BD-HD1 is an ESD-protection device with the characteristic of a Z-Diode with a high
ESD-immunity and a very low capacitance which makes it usable for high frequency applications like USB2.0
or HDMI

With the VBUS051BD-HD1 one high speed data line can be protected against transient voltage signals like
ESD (Electro Static Discharge). Connected to the data line (pin 2) and to ground (pin 1) negative transients will
be clamped close below the ground level while positive transients will be clamped close above the 5 V working
range. The clamping behaviour of the VBUS051BD-HD1 is bidirectional but asymmetrical (BiAs) and so it
offers the best protection for applications running up to 5 V.

V

RWM

I

V

V

V

C

R

BR

5V

< 0.01 0.1 µA

6.9 7.9 8.7 V

C

F

D

1.9 2.5 V

1.3 1.8 pF

16 V

Typical Characteristics

T

= 25 °C, unless otherwise specified

amb

120 %

100 %

ESD

80 %

60 %

53 %

40 %

27 %

Discharge Current I

20 %

0 %

- 10 0 10 20 30 40 50 60 70 80 90 100

20557

Figure 1. ESD Discharge Current Wave Form

acc. IEC 61000-4-2 (330 Ω/150 pF)

rise time = 0.7 ns to 1 ns

Time (ns)

8 µs to 100 %

20 µs to 50 %

Time (µs)

I

100 %

80 %

60 %

PPM

40 %

20 %

0 %

010203040

20548

Figure 2. 8/20 µs Peak Pulse Current Wave Form

acc. IEC 61000-4-5

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2

For technical support, please contact: [e-mail]

Document Number 81785

Rev. 1.2, 16-Apr-08

VBUS051BD-HD1

Vishay Semiconductors

2.5
f = 1 MHz

2

1.5

(pF)

D

C

1

0.5

0

0123456

20879

VR (V)

Figure 3. Typical Capacitance CD vs. Reverse Voltage V

100

10

1

(mA)

F

I

0.1

0.01

0.001

0.5 0.6 0.7 0.8 0.9 1 1.1

20880

VF (V)

Figure 4. Typical Forward Current IF vs. Forward Voltage V

16

14

12

10

8

6

(V)

C

4

V

2

0

- 2

- 4

- 6
0123

20882

R

F

Figure 6. Typical Peak Clamping Voltage VC vs.

16

14

12

10

8

(V)

6

C-ESD

V

4

2

0

- 2

- 10 0 10 20 30 40 50 60 70 8090

20883

Figure 7. Typical Clamping Performance at + 200 V Contact

positive surge

Measured
acc. IEC 61000-4-5
(8/20 µs - wave form)

negative surge

IPP (A)

Peak Pulse Current I

acc. IEC 61000-4-2

contact discharge

t (ns)

V

C

PP

+ 200 V

Discharge (acc. IEC 61000-4-2)

9

8

7

6

5

(V)

R

4

V

3

2

1

0

0.01 0.1 1 10 100 1000 10000

20881

Figure 5. Typical Reverse Voltage VR vs.

Reverse Current I

Document Number 81785

Rev. 1.2, 16-Apr-08

2

0

- 2

- 4

(V)

- 6

C-ESD

V

- 8

- 10

- 12

- 14

- 10 0 10 20 30 40 50 60 70 8090

IR (µA)

20884

Figure 8. Typical Clamping Performance at - 200 V Contact

R

Discharge (acc. IEC 61000-4-2)

For technical support, please contact: [e-mail]

acc. IEC 61000-4-2

- 200 V

contact discharge

t (ns)

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3

VBUS051BD-HD1

Vishay Semiconductors

100

acc. IEC 61000-4-2

80

60

(V)

40

C-ESD

V

20

0

- 20

- 10 0 10 20 30 40 50 60 70 8090

20885

Figure 9. Typical Clamping Performance at + 6 kV Contact

+ 6 kV

contact discharge

t (ns)

(V)

V

Figure 10. Typical Clamping Performance at - 6 kV Contact

Discharge (acc. IEC 61000-4-2)

Package Dimensions in millimeters (inches): LLP1006-2L

0.3 [0.012]

0.2 [0.008]

0.25 [0.010]

0.15 [0.006]

0.45 [0.018]

0.35 [0.014]

0.55 [0.022]

0.45 [0.018]

20

0

- 20

- 40

- 60

C-ESD

- 80

- 100

- 120

- 140

- 10 0 10 20 30 40 50 60 70 8090

20886

acc. IEC 61000-4-2

- 6 kV

contact discharge

t (ns)

Discharge (acc. IEC 61000-4-2)

0.65 [0.026]

0.55 [0.022]

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4

Orientation Identification

0.4 [0.016]

0.33 [0.013]

foot print recommendation:

1 [0.039]

0.5 [0.020]

0.6 [0.024]

0.05 [0.002]

0.25 [0.010]

Document no.: S8-V-3906.04-005 (4)
Rev. 2 - Date: 22.October.2007

20812

For technical support, please contact: [e-mail]

0 [0.000]

0.05 [0.002]

1.05 [0.041]

0.95 [0.037]

solder

resist mask

0.2 [0.008]

solder pad

0.5 [0.020]

soldermask opening ± 0.03

measured middle of the package

0.125 [0.005] Ref.

Document Number 81785

Rev. 1.2, 16-Apr-08

VBUS051BD-HD1

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively.

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA.

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer

application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or

unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages,

and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated

with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number 81785

Rev. 1.2, 16-Apr-08

For technical support, please contact: [e-mail]

www.vishay.com

5

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1