VISHAY VBUS051BD-HD1 Technical data
VBUS051BD-HD1
Vishay Semiconductors
Low Capacitance, Single-Line ESD-Protection Diode
Features
• Ultra compact LLP1006-2L package
• Low package height < 0.4 mm
• 1-line ESD-protection
• Low leakage current < 0.1 µA
• Low load capacitance C
= 1.3 pF
D
• ESD-protection to IEC 61000-4-2
± 15 kV contact discharge
± 15 kV air discharge
• High surge current acc. IEC61000-4-5 I
• Soldering can be checked by standard vision
inspection. No X-ray necessary
• Lead (Pb)-free component
• Pin plating NiPdAu (e4) no whisker growth
• "Green" molding compound
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
PP
e4
20855
> 3 A
2
1
20856
Marking (example only)
dot = Cathode marking
XY
21121
X = Date code
Y = Type code (see table below)
Ordering Information
Device name Ordering code
VBUS051BD-HD1 VBUS051BD-HD1-GS08 8000 8000
Taped units per reel
(8 mm tape on 7" reel)
Minimum order quantity
Package Data
Device name
VBUS051BD-HD1 LLP1006-2L A 0.72 mg UL 94 V-0
Package
name
Type
code
Weight
Molding compound
flammability rating
Moisture sensitivity level Soldering conditions
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
Absolute Maximum Ratings
Para me te r Test conditions Symbol Val ue Unit
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature Junction temperature
Storage temperature
Acc. IEC 61000-4-5; t
Acc. IEC 61000-4-5; t
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
= 8/20 µs; single shot I
P
= 8/20 µs; single shot P
P
V
V
T
PPM
PP
ESD
ESD
T
STG
3A
45 W
± 15 kV
± 15 kV
J
- 40 to + 125 °C
- 40 to + 150 °C
Document Number 81785
Rev. 1.2, 16-Apr-08
For technical support, please contact: ESD-Protection@vishay.com
www.vishay.com
1
VBUS051BD-HD1
Vishay Semiconductors
Electrical Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
VBUS051BD-HD1
Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit
Protection paths Number of line which can be protected N lines 1 lines
at I
= 0.1 µA;
Reverse working voltage
Max. reverse current
Min. reverse breakdown
voltage
Max. clamping voltage
Max. forward clamping
voltage
Line capacitance
at I
at I
PP
F
R
pin 2 to pin 1
at V
R
= V
RWM
= 5 V;
pin 2 to pin 1
at I
= 1 mA
R
pin 2 to pin 1
= 3 A; acc. IEC 61000-4-5;
pin 2 to pin 1
= 3 A; acc. IEC 61000-4-5;
pin 1 to pin 2
at V
= 0 V; f = 1 MHz;
R
pin 2 to pin 1
Application Note
The VBUS051BD-HD1 is an ESD-protection device with the characteristic of a Z-Diode with a high
ESD-immunity and a very low capacitance which makes it usable for high frequency applications like USB2.0
or HDMI
With the VBUS051BD-HD1 one high speed data line can be protected against transient voltage signals like
ESD (Electro Static Discharge). Connected to the data line (pin 2) and to ground (pin 1) negative transients will
be clamped close below the ground level while positive transients will be clamped close above the 5 V working
range. The clamping behaviour of the VBUS051BD-HD1 is bidirectional but asymmetrical (BiAs) and so it
offers the best protection for applications running up to 5 V.
V
RWM
I
V
V
V
C
R
BR
5V
< 0.01 0.1 µA
6.9 7.9 8.7 V
C
F
D
1.9 2.5 V
1.3 1.8 pF
16 V
Typical Characteristics
T
= 25 °C, unless otherwise specified
amb
120 %
100 %
ESD
80 %
60 %
53 %
40 %
27 %
Discharge Current I
20 %
0 %
- 10 0 10 20 30 40 50 60 70 80 90 100
20557
Figure 1. ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 Ω/150 pF)
rise time = 0.7 ns to 1 ns
Time (ns)
8 µs to 100 %
20 µs to 50 %
Time (µs)
I
100 %
80 %
60 %
PPM
40 %
20 %
0 %
010203040
20548
Figure 2. 8/20 µs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
www.vishay.com
2
For technical support, please contact: ESD-Protection@vishay.com
Document Number 81785
Rev. 1.2, 16-Apr-08
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