• Additional measurement of voltage group TZMB9V1 to TZMB75, I
(1)
at Tj = 150 °C
at 95 % V
R
35 nA at Tj = 25 °C
Zmin.
Rev. 1.7, 12-Mar-2019
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Document Number: 84122
Page 4
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101520
1
10
100
1000
V
Z
- Voltage Change (mV)
VZ - Z-Voltage (V)
25
95 9598
IZ = 5 mA
0
5
- 6060120180
0.8
0.9
1.0
1.1
1.2
1.3
V
Ztn
- Relative Voltage Change
Tj - Junction Temperature (°C)
240
95 9599
0
V
Ztn
= VZt/VZ (25 °C)
0
TK
VZ
= 10 x 10-4/K
8 x 10
-4
/K
2 x 10
-4
/K
6 x 10
-4
/K
4 x 10
-4
/K
- 4 x 10-4/K
- 2 x 10-4/K
1015
0
50
100
150
200
C
D
- Diode Capacitance (pF)
VZ - Z-Voltage (V)
25
95 9601
20
Tj = 25 °C
VR = 2 V
0
5
TZM-Series
Vishay Semiconductors
BASIC CHARACTERISTICS (T
= 25 °C, unless otherwise specified)
amb
600
500
400
300
200
100
- Total Power Dissipation (mW)
tot
P
0
0120160
95 9602
T
amb
80
40
- Ambient Temperature (°C)
Fig. 1 - Total Power Dissipation vs. Ambient Temperature
200
15
10
/K)
-4
5
(10
Z
of V
0
- Temperature Coefficient
VZ
IZ = 5 mA
TK
- 5
0 10 203040 50
95 9600
VZ - Z-Voltage (V)
Fig. 4 - Temperature Coefficient of V
vs. Z-Voltage
Z
Fig. 2 - Typical Change of Working Voltage under Operating
Rev. 1.7, 12-Mar-2019
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Conditions at T
Fig. 3 - Typical Change of Working Voltage vs.
Junction Temperature
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
amb
= 25 °C
Fig. 5 - Diode Capacitance vs. Z-Voltage
100
10
1
0.1
- Forward Current (mA)
0.01
F
I
0.001
00.20.40.60.8
959605
Tj = 25 °C
1.0
VF - Forward Voltage (V)
Fig. 6 - Forward Current vs. Forward Voltage
4
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Page 5
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15202530
0
10
20
30
40
50
I
Z
- Z-Current (mA)
VZ - Z-Voltage (V)
35
95 9607
P
tot
= 500 mW
T
amb
= 25 °C
0101520
1
10
100
1000
25
95 9606
Tj = 25 °C
IZ = 1 mA
5 mA
10 mA
VZ - Z-Voltage (V)
r
Z
- Differential Z-Resistance (Ω)
5
1
10
100
1000
Z
thp
- Thermal Resistance for Pulse Cond. (K/W)
tp - Pulse Length (ms)
95 9603
10
-1
10
0
10
1
10
2
tp/T = 0.5
tp/T = 0.2
tp/T = 0.1
tp/T = 0.05
tp/T = 0.02
tp/T = 0.01
Single Pulse
R
thJA
= 300 K/W
T = T
j max.
- T
amb
iZM = (- VZ + (V
Z
2
+ 4rzj x T/Z
thp
)
1/2
)/(2rzj)
100
TZM-Series
Vishay Semiconductors
80
60
40
- Z-Current (mA)
Z
I
20
0
046
95 9604
VZ - Z-Voltage (V)
Fig. 7 - Z-Current vs. Z-Voltage
P
T
8
= 500 mW
tot
= 25 °C
amb
12
20
Fig. 9 - Differential Z-Resistance vs. Z-Voltage
Rev. 1.7, 12-Mar-2019
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Fig. 8 - Z-Current vs. Z-Voltage
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Fig. 10 - Thermal Response
5
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Page 6
Cathode indentification
0.47 (0.019) max.
2.5 (0.098) max.
1.25 (0.49) min.
3.7 (0.146)
3.3 (0.130)
5 (0.197) ref.
2 (0.079) min.
1.6 (0.063)
1.4 (0.055)
Foot print recommendation:
*
* The gap between plug and glass can
be either on cathode or anode side
Document no.:6.560-5005.01-4
Rev. 8 - Date: 07.June.2006
96 12070
www.vishay.com
PACKAGE DIMENSIONS in millimeters (inches): MiniMELF (SOD-80)
TZM-Series
Vishay Semiconductors
Rev. 1.7, 12-Mar-2019
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Page 7
Legal Disclaimer Notice
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