Small Signal Zener Diodes
Features
• Very sharp reverse characteristic
• Low reverse current level
• Very high stability
•Low noise
• TZMC - V
• TZMB - V
-tolerance ± 5 %
Z
-tolerance ± 2 %
Z
• Available with tighter tolerances
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• Voltage stabilization
e2
TZM-Series
Vishay Semiconductors
17205
Mechanical Data
Case: MiniMELF Glass case (SOD-80)
Weight: approx. 31 mg
Packaging codes/ options:
GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Power dissipation R
Z-current I
Junction temperature T
Storage temperature range T
≤ 300 K/W P
thJA
tot
Z
j
stg
500 mW
P
tot/VZ
175 °C
- 65 to + 175 °C
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Junction to ambient air on PC board 50 mm x 50 mm x 1.6 mm R
thJA
500 K/W
mA
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Document Number 84122
Rev. 1.4, 28-Feb-06
= 200 mA V
F
F
1.5 V
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1
TZM-Series
Vishay Semiconductors
Electrical Characteristics
Partnumber Zener Voltage
Range
VZ at I
ZT
V V Ω Ω mA mA µA µA V %/K %/K
min max typ typ min max
TZMC2V4 2.28 2.56 < 85 < 600 5 1 < 50 < 100 1 - 0.09 - 0.06
TZMC2V7 2.5 2.9 < 85 < 600 5 1 < 10 < 50 1 - 0.09 - 0.06
TZMC3V0 2.8 3.2 < 90 < 600 5 1 < 4 < 40 1 - 0.08 - 0.05
TZMC3V3 3.1 3.5 < 90 < 600 5 1 < 2 < 40 1 - 0.08 - 0.05
TZMC3V6 3.4 3.8 < 90 < 600 5 1 < 2 < 40 1 - 0.08 - 0.05
TZMC3V9 3.7 4.1 < 90 < 600 5 1 < 2 < 40 1 - 0.08 - 0.05
TZMC4V3 4 4.6 < 90 < 600 5 1 < 1 < 20 1 - 0.06 - 0.03
TZMC4V7 4.4 5 < 80 < 600 5 1 < 0.5 < 10 1 - 0.05 0.02
TZMC5V1 4.8 5.4 < 60 < 550 5 1 < 0.1 < 2 1 - 0.02 0.02
TZMC5V6 5.2 6 < 40 < 450 5 1 < 0.1 < 2 1 - 0.05 0.05
TZMC6V2 5.8 6.6 < 10 < 200 5 1 < 0.1 < 2 2 0.03 0.06
TZMC6V8 6.4 7.2 < 8 < 150 5 1 < 0.1 < 2 3 0.03 0.07
TZMC7V5 7 7.9 < 7 < 50 5 1 < 0.1 < 2 5 0.03 0.07
TZMC8V2 7.7 8.7 < 7 < 50 5 1 < 0.1 < 2 6.2 0.03 0.08
TZMC9V1 8.5 9.6 < 10 < 50 5 1 < 0.1 < 2 6.8 0.03 0.09
TZMC10 9.4 10.6 < 15 < 70 5 1 < 0.1 < 2 7.5 0.03 0.1
TZMC11 10.4 11.6 < 20 < 70 5 1 < 0.1 < 2 8.2 0.03 0.11
TZMC12 11.4 12.7 < 20 < 90 5 1 < 0.1 < 2 9.1 0.03 0.11
TZMC13 12.4 14.1 < 26 < 110 5 1 < 0.1 < 2 10 0.03 0.11
TZMC15 13.8 15.6 < 30 < 110 5 1 < 0.1 < 2 11 0.03 0.11
TZMC16 15.3 17.1 < 40 < 170 5 1 < 0.1 < 2 12 0.03 0.11
TZMC18 16.8 19.1 < 50 < 170 5 1 < 0.1 < 2 13 0.03 0.11
TZMC20 18.8 21.2 < 55 < 220 5 1 < 0.1 < 2 15 0.03 0.11
TZMC22 20.8 23.3 < 55 < 220 5 1 < 0.1 < 2 16 0.04 0.12
TZMC24 22.8 25.6 < 80 < 220 5 1 < 0.1 < 2 18 0.04 0,12
TZMC27 25.1 28.9 < 80 < 220 5 1 < 0.1 < 2 20 0.04 0.12
TZMC30 28 32 < 80 < 220 5 1 < 0.1 < 2 22 0.04 0.12
TZMC33 31 35 < 80 < 220 5 1 < 0.1 < 2 24 0.04 0.12
TZMC36 34 38 < 80 < 220 5 1 < 0.1 < 2 27 0.04 0.12
TZMC39 37 41 < 90 < 500 2.5 0.5 < 0.1 < 5 30 0.04 0.12
TZMC43 40 46 < 90 < 600 2.5 0.5 < 0.1 < 5 33 0.04 0.12
TZMC47 44 50 < 110 < 700 2.5 0.5 < 0.1 < 5 36 0.04 0.12
TZMC51 48 54 < 125 < 700 2.5 0.5 < 0.1 < 10 39 0.04 0.12
TZMC56 52 60 < 135 < 1000 2.5 0.5 < 0.1 < 10 43 0.04 0.12
TZMC62 58 66 < 150 < 1000 2.5 0.5 < 0.1 < 10 47 0.04 0.12
TZMC68 64 72 < 200 < 1000 2.5 0.5 < 0.1 < 10 51 0.04 0.12
TZMC75 70 79 < 250 < 1500 2.5 0.5 < 0.1 < 10 56 0.04 0.12
1)
at Tj = 150 °C
Dynamic
Resistance
r
at
zjT
I
ZT
Test Current Reverse Leakage Current Temperature
Coefficient of
Zener Voltage
r
zjK
at
I
ZK
I
ZT
I
ZK
I
R
1)
at V
I
R
R
TK
VZ
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2
Document Number 84122
Rev. 1.4, 28-Feb-06
TZM-Series
Vishay Semiconductors
Electrical Characteristics
Partnumber Zener Voltage
Range
VZ at I
ZT
V V Ω Ω mA mA µA µA V %/K %/K
min max typ typ min max
TZMB2V4 2.35 2.45 < 85 < 600 5 1 < 50 < 100 1 - 0.09 - 0.06
TZMB2V7 2.64 2.76 < 85 < 600 5 1 < 10 < 50 1 - 0.09 - 0.06
TZMB3V0 2.94 3.06 < 90 < 600 5 1 < 4 < 40 1 - 0.08 - 0.05
TZMB3V3 3.24 3.36 < 90 < 600 5 1 < 2 < 40 1 - 0.08 - 0.05
TZMB3V6 3.52 3.68 < 90 < 600 5 1 < 2 < 40 1 - 0.08 - 0.05
TZMB3V9 3.82 3.98 < 90 < 600 5 1 < 2 < 40 1 - 0.08 - 0.05
TZMB4V3 4.22 4.38 < 90 < 600 5 1 < 1 < 20 1 - 0.06 -0.03
TZMB4V7 4.6 4.8 < 80 < 600 5 1 < 0.5 < 10 1 - 0.05 0.02
TZMB5V1 5 5.2 < 60 < 550 5 1 < 0.1 < 2 1 - 0.02 0.02
TZMB5V6 5.48 5.72 < 40 < 450 5 1 < 0.1 < 2 1 - 0.05 0.05
TZMB6V2 6.08 6.32 < 10 < 200 5 1 < 0.1 < 2 2 0.03 0.06
TZMB6V8 6.66 6.94 < 8 < 150 5 1 < 0.1 < 2 3 0.03 0.07
TZMB7V5 7.35 7.65 < 7 < 50 5 1 < 0.1 < 2 5 0.03 0.07
TZMB8V2 8.04 8.36 < 7 < 50 5 1 < 0.1 < 2 6.2 0.03 0.08
TZMB9V1 8.92 9.28 < 10 < 50 5 1 < 0.1 < 2 6.8 0.03 0.09
TZMB10 9.8 10.2 < 15 < 70 5 1 < 0.1 < 2 7.5 0.03 0.1
TZMB11 10.78 11.22 < 20 < 70 5 1 < 0.1 < 2 8.2 0.03 0.11
TZMB12 11.76 12.24 < 20 < 90 5 1 < 0.1 < 2 9.1 0.03 0.11
TZMB13 12.74 13.26 < 26 < 110 5 1 < 0.1 < 2 10 0.03 0.11
TZMB15 14.7 15.3 < 30 < 110 5 1 < 0.1 < 2 11 0.03 0.11
TZMB16 15.7 16.3 < 40 < 170 5 1 < 0.1 < 2 12 0.03 0.11
TZMB18 17.64 18.36 < 50 < 170 5 1 < 0.1 < 2 13 0.03 0.11
TZMB20 19.6 20.4 < 55 < 220 5 1 < 0.1 < 2 15 0.03 0.11
TZMB22 21.55 22.45 < 55 < 220 5 1 < 0.1 < 2 16 0.04 0.12
TZMB24 23.5 24.5 < 80 < 220 5 1 < 0.1 < 2 18 0.04 0,12
TZMB27 26.4 27.6 < 80 < 220 5 1 < 0.1 < 2 20 0.04 0.12
TZMB30 29.4 30.6 < 80 < 220 5 1 < 0.1 < 2 22 0.04 0.12
TZMB33 32.4 33.6 < 80 < 220 5 1 < 0.1 < 2 24 0.04 0.12
TZMB36 35.3 36.7 < 80 < 220 5 1 < 0.1 < 2 27 0.04 0.12
TZMB39 38.2 39.8 < 90 < 500 2.5 1 < 0.1 < 5 30 0.04 0.12
TZMB43 42.1 43.9 < 90 < 600 2.5 0.5 < 0.1 < 5 33 0.04 0.12
TZMB47 46.1 47.9 < 110 < 700 2.5 0.5 < 0.1 < 5 36 0.04 0.12
TZMB51 50 52 < 125 < 700 2.5 0.5 < 0.1 < 10 39 0.04 0.12
TZMB56 54.9 57.1 < 135 < 1000 2.5 0.5 < 0.1 < 10 43 0.04 0.12
TZMB62 60.8 63.2 < 150 < 1000 2.5 0.5 < 0.1 < 10 47 0.04 0.12
TZMB68 66.6 69.4 < 200 < 1000 2.5 0.5 < 0.1 < 10 51 0.04 0.12
TZMB75 73.5 76.5 < 250 < 1500 2.5 0.5 < 0.1 < 10 56 0.04 0.12
1)
at Tj = 150 °C
NOTE: Additional measurement of voltage group TZMB9V1 to TZMB75, I
Dynamic
Resistance
r
at
zjT
I
ZT
Test Current Reverse Leakage Current Temperature
Coefficient of
Zener Voltage
r
zjK
at
I
ZK
I
ZT
I
ZK
at 95 % V
R
I
R
= < 35 nA at Tj = 25 °C
Zmin
1)
at V
I
R
R
TK
VZ
Document Number 84122
Rev. 1.4, 28-Feb-06
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3
TZM-Series
Vishay Semiconductors
Typical Characteristics
T
= 25 °C, unless otherwise specified
amb
600
500
400
300
200
100
- Total Power Dissipation (mW)
tot
0
P
0 120 160
95 9602
80
40
T
- Ambient Temperature (°C)
amb
Figure 1. Total Power Dissipation vs. Ambient Temperature
200
/K)
15
-4
(10
Z
10
5
IZ = 5 mA
0
- 5
- Temperature Coefficient of V
TK
VZ
0
95 9600
10 20
V
- Z-Voltage (V)
Z
30
50
40
Figure 4. Temperature Coefficient of Vz vs. Z-Voltage
1000
Tj = 25 °C
100
I
= 5 mA
Z
10
- Voltage Change (mV)
Z
V
95 9598
1
0
10 15 20
5
VZ - Z-Voltage (V)
25
Figure 2. Typical Change of Working Voltage under Operating
Conditions at T
1.3
V
= VZt/VZ (25 °C)
Ztn
1.2
1.1
1.0
0.9
- Relative Voltage Change
Ztn
V
0.8
95 9599
0
- 60 60 120 180
Tj - Junction Temperature (°C)
=25°C
amb
TKVZ = 10 x 10-4/K
8 x 10
6 x 10
4 x 10
2 x 10
0
- 2 x 10-4/K
- 4 x 10-4/K
-4
-4
-4
-4
240
/K
/K
/K
/K
Figure 3. Typical Change of Working Voltage vs. Junction
Temperature
200
150
VR = 2 V
100
Tj = 25 °C
50
- Diode Capacitance (pF)
D
C
0
95 9601
5
10 15
0
VZ - Z-Voltage (V)
25
20
Figure 5. Diode Capacitance vs. Z-Voltage
100
10
1
Tj = 25 °C
0.1
0.01
- Forward Current (mA)
F
I
0.001
0 0.2 0.4 0.6 0.8
95 9605
VF - Forward Voltage (V)
1.0
Figure 6. Forward Current vs. Forward Voltage
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4
Document Number 84122
Rev. 1.4, 28-Feb-06
TZM-Series
Vishay Semiconductors
100
80
60
P
tot
T
amb
40
- Z-Current (mA)
Z
I
20
0
046
95 9604
VZ - Z-Voltage (V)
8
Figure 7. Z-Current vs. Z-Voltage
50
P
= 500 mW
40
30
20
- Z-Current (mA)
Z
I
10
tot
T
amb
= 500 mW
= 25 °C
12
= 25 °C
1000
(Ω)
IZ = 1 mA
100
5 mA
10 mA
10
- Differential Z-Resistance
Z
1
r
20
0 5 10 15 20
95 9606
VZ - Z-Voltage (V)
Tj = 25 °C
25
Figure 9. Differential Z-Resistance vs. Z-Voltage
0
15 20 25 30
95 9607
VZ - Z-Voltage (V)
Figure 8. Z-Current vs. Z-Voltage
1000
tP/T = 0.5
10
1
10
tP/T = 0.2
tP/T = 0.1
-1
tP/T = 0.02
tP/T = 0.05
100
- Thermal Resistance for Pulse Cond. (KW)
thp
Z
95 9603
0
10
35
Single Pulse
tP/T = 0.01
iZM = (- VZ + (V
1
10
tP - Pulse Length (ms)
Figure 10. Thermal Response
2
+ 4rzj x T/Z
Z
10
R
T = T
2
thJA
= 300 K/W
- T
jmax
1/2
)
)/(2rzj)
thp
amb
Document Number 84122
Rev. 1.4, 28-Feb-06
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5
TZM-Series
Vishay Semiconductors
Package Dimensions in mm (Inches)
Cathode indification
3.7 (0.146)
3.3 (0.130)
1.6 (0.063)
1.4 (0.055)
0.47 max. (0.019)
foot print recommendation:
Document no.: 6.560-5005.01-4
Rev. 7 - Date: 07.February.2005
96 12070
2.5 (0.098) max
5.0 (0.197) ref
1.25 (0.049) min
2.0 (0.079) min
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6
Document Number 84122
Rev. 1.4, 28-Feb-06
TZM-Series
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 84122
Rev. 1.4, 28-Feb-06
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7
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
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