Vishay TSOP62 User Manual

VISHAY
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2
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Vishay Semiconductors
IR Receiver Modules for Remote Control Systems

Description

The TSOP62.. - series are miniaturized SMD-IR Receiver Modules for infrared remote control sys­tems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR fil­ter.
The demodulated output signal can directly be decoded by a microprocessor. TSOP62.. is the stan­dard IR remote control SMD-Receiver series, sup­porting all major transmission codes.

Features

• Photo detector and preamplifier in one package
TSOP62..
• Internal filter for PCM frequency
• Continuous data transmission possible
• TTL and CMOS compatibility
• Output active low
• Low power consumption
• High immunity against ambient light
• Low power consumption

Special Features

• Improved immunity against ambient light
• Suitable burst length 10 cycles/burst
• Taping available for Topview and Sideview assembly

Block Diagram

16839
3
V
S
4
OUT
1;2
GND
PIN
AGCInput
Band Pass
Control
30 k
Demo­dulator
Circuit

Mechanical Data

Pinning:
1 = GND, 2 = GND, 3 = V
, 4 = OUT
S
Parts Table
Part Carrier Frequency
TSOP6230 30 kHz
TSOP6233 33 kHz
TSOP6236 36 kHz
TSOP6237 36.7 kHz
TSOP6238 38 kHz
TSOP6240 40 kHz
TSOP6256 56 kHz

Application Circuit

16842
Transmitter
with
TSALxxxx
TSOPxxxx
Circuit
V
S
OUT
GND
R1=100
C1=
4.7 µF
+V
S
µC
V
O
GND
Document Number 82177
Rev. 3, 23-Jun-03
R1+C1recommended to suppress power supply disturbances.
The output voltage should not be hold continuously at a voltage below V
=
3.3 V by the external circuit.
O
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TSOP62..
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Supply Voltage Pin 3 V
Supply Current Pin 3 I
Output Voltage Pin 4 V
Output Current Pin 4 I
Junction Temperature T
Storage Temperature Range T
Operating Temperature Range T
Power Consumption T
Electrical and Optical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Ty p . Max Unit
Supply Current VS = 5 V, Ev = 0 I
VS = 5 V,
= 40 klx, sunlight
E
v
Supply Voltage V
Transmission Distance Ev = 0, test signal see fig.1,
IR diode TSAL6200, I
= 400 mA
F
Output Voltage Low (Pin 4) I
Irradiance (30-40 kHz) Pulse width tolerance:
Irradiance (56 kHz) Pulse width tolerance:
Irradiance tpi - 5/fo < tpo < tpi + 6/fo,
Directivity Angle of half transmission
= 0.5 mA,
OSL
E
= 0.7 mW/m2,
e
test signal see fig. 1
- 5/fo < tpo < tpi + 6/fo,
t
pi
test signal see fig.1
- 5/fo < tpo < tpi + 6/fo,
t
pi
test signal see fig.1
test signal see fig. 1
distance
85 °C P
amb
SD
I
SH
S
0.8 1.1 1.5 mA
4.5 5.5 V
d 35 m
V
OSL
E
e min
E
e min
E
e max
ϕ
1/2
30
VISHAY
S
S
O
O
j
stg
amb
tot
1.4 mA
0.35 0.5
0.4 0.6
± 50 deg
- 0.3 to 6.0 V
5 mA
- 0.3 to 6.0 V
15 mA
100 °C
- 40 to + 100 °C
- 25 to + 85 °C
50 mW
250 mV
mW/m
mW/m
W/m
2
2
2
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Document Number 82177
Rev. 3, 23-Jun-03
VISHAY
TSOP62..
Vishay Semiconductors
Typical Characteristics (T
Optical Test Signal
E
e
(IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms)
amb
tpi *
T
* t
w 10/fo is recommended for optimal function
pi
Output Signal
V
O
V
OH
V
OL
1)
7/f0< td< 15/f
2)
tpi–5/f0< tpo < tpi+6/f
1)
t
d
0
0
2)
t
po
Figure 1. Output Function
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
po
0.1
t – Output Pulse Width ( ms )
0.0
0.1 1.0 10.0 100.0 1000.010000.0
16908
Output Pulse
Input Burst Duration
l = 950 nm,
optical test signal, fig.1
Ee – Irradiance ( mW/m2 )
= 25 °C unless otherwise specified)
1.0
0.9
t
16110
t
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
on off
T ,T – Output Pulse Width ( ms )
0.0
0.1 1.0 10.0 100.0 1000.010000.0
16909
Figure 4. Output Pulse Diagram
1.2
1.0
0.8
0.6
0.4
0.2
e min e
E / E – Rel. Responsivity
0.0
0.7 0.9 1.1 1.3
16925
To n
To ff
l = 950 nm,
optical test signal, fig.3
Ee – Irradiance ( mW/m2 )
f = f0"5%
Df ( 3dB ) = f
f/f0 – Relative Frequency
/10
0
Figure 2. Pulse Length and Sensitivity in Dark Ambient
Optical Test Signal
E
e
600 ms 600 ms
T = 60 ms
Output Signal, ( see Fig.4 )
V
O
V
OH
V
OL
T
on
T
off
Figure 3. Output Function
Document Number 82177
Rev. 3, 23-Jun-03
94 8134
t
Figure 5. Frequency Dependence of Responsivity
4.0
2
t
e min
E – Threshold Irradiance ( mW/m )
16911
Correlation with ambient light sources:
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.01 0.10 1.00 10.00 100.00
2
10W/m
^1.4klx (Std.illum.A,T=2855K)
2
10W/m
^8.2klx (Daylight,T=5900K)
Ambient, l = 950 nm
E – Ambient DC Irradiance (W/m2)
Figure 6. Sensitivity in Bright Ambient
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TSOP62..
Vishay Semiconductors
VISHAY
2.0
2
f = f
1.5
1.0
0.5
e min
E – Threshold Irradiance ( mW/m )
0.0
0.1 1.0 10.0 100.0 1000.0
16912
DV
sRMS
o
f = 10 kHz
f = 1 kHz
f = 100 Hz
– AC Voltage on DC Supply Voltage (mV)
Figure 7. Sensitivity vs. Supply Voltage Disturbances
2
2.0
f(E) = f
1.6
1.2
0.8
0.4
e min
E – Threshold Irradiance ( mW/m )
0.0
0.0 0.4 0.8 1.2 1.6
94 8147
E – Field Strength of Disturbance ( kV/m )
0
2.0
0.6
2
Sensitivity in dark ambient
0.5
0.4
0.3
0.2
0.1
e min
E – Threshold Irradiance ( mW/m )
0.0 –30–150 153045607590
T
16918
– Ambient Temperature ( qC )
amb
Figure 10. Sensitivity vs. Ambient Temperature
1.2
1.0
0.8
0.6
0.4
rel
0.2
S ( ) – Relative Spectral Sensitivityl
0.0 750 850 950 1050 1150
16919
l – Wavelength ( nm )
Figure 8. Sensitivity vs. Electric Field Disturbances
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Max. Envelope Duty Cycle
0.1
0.0
16913
f = 38 kHz, Ee = 2 mW/m
0 20 40 60 80 100 120
Burst Length ( number of cycles / burst )
2
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
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Figure 11. Relative Spectral Sensitivity vs. Wavelength
0°
16801
1.0
0.9
0.8
0.7
0.4 0.2 0 0.2 0.4
0.6 d
- Relative Transmission Distance
rel
10° 20°
30°
40°
50°
60°
70°
80°
0.6
Figure 12. Directivity
Document Number 82177
Rev. 3, 23-Jun-03
VISHAY

Suitable Data Format

The circuit of the TSOP62.. is designed in that way that unexpected output pulses due to noise or distur­bance signals are avoided. A bandpass filter, an inte­grator stage and an automatic gain control are used to suppress such disturbances.
The distinguishing mark between data signal and dis­turbance signal are carrier frequency, burst length and duty cycle.
The data signal should fulfill the following conditions:
• Carrier frequency should be close to center fre­quency of the bandpass (e.g. 38 kHz).
• Burst length should be 10 cycles/burst or longer.
• After each burst which is between 10 cycles and 70 cycles a gap time of at least 14 cycles is necessary.
• For each burst which is longer than 1.8 ms a corre­sponding gap time is necessary at some time in the data stream. This gap time should be at least 4 times longer than the burst.
• Up to 800 short bursts per second can be received continuously.
Some examples for suitable data format are: NEC Code (repetitive pulse), NEC Code (repetitive data), Toshiba Micom Format, Sharp Code, RC5 Code, RC6 Code, R-2000 Code, Sony Code.
When a disturbance signal is applied to the TSOP62.. it can still receive the data signal. However the sensi­tivity is reduced to that level that no unexpected pulses will occur.
Some examples for such disturbance signals which are suppressed by the TSOP62.. are:
• DC light (e.g. from tungsten bulb or sunlight)
• Continuous signal at 38 kHz or at any other fre­quency
• Signals from fluorescent lamps with electronic bal­last with high or low modulation (see Figure 13 or Figure 14).
TSOP62..
Vishay Semiconductors
IR Signal
IR Signal from fluorescent
lamp with low modulation
0 5 10 15 20
16920
Figure 13. IR Signal from Fluorescent Lamp with low Modulation
IR Signal from fluorescent lamp with high modulation
IR Signal
0 5 10 15 20
16921
Figure 14. IR Signal from Fluorescent Lamp with high Modulation
Time ( ms )
Time ( ms )
Document Number 82177
Rev. 3, 23-Jun-03
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