VISHAY TSHA520 Technical data
VISHAY
94 8390
TSHA520.
Vishay Semiconductors
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double
Hetero
Description
The TSHA520. series are high efficiency infrared
emitting diodes in GaAlAs on GaAlAs technology,
molded in a clear, untinted plastic package.
In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about
70 % radiant power improvement.
Features
• Extra high radiant power and radiant intensity
• Suitable for high pulse current operation
• Standard T-1¾ (∅ 5 mm) package
• Angle of half intensity ϕ = ± 12 °
• Peak wavelength λ
= 875 nm
p
• High reliability
• Good spectral matching to Si photodetectors
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Infrared remote control and free air transmission systems with high power and long transmission distance
requirements in combination with PIN photodiodes or
phototransistors.
Because of the reduced radiance absorption in glass
at the wavelength of 875 nm, this emitter series is also
suitable for systems with panes in the transmission
range between emitter and detector.
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Reverse Voltage V
Forward current I
Peak Forward Current t
Surge Forward Current t
Power Dissipation P
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature t ≤ 5 sec, 2 mm from case T
Thermal Resistance Junction/
Ambient
/T = 0.5, tp = 100 µsIFM200 mA
p
= 100 µsI
p
R
F
FSM
amb
stg
sd
thJA
R
V
j
5V
100 mA
2.5 A
210 mW
100 °C
- 55 to + 100 °C
- 55 to + 100 °C
260 °C
350 K/W
Document Number 81019
Rev. 1.4, 11-May-04
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TSHA520.
VISHAY
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Typ . Max Unit
Forward Voltage I
Temp. Coefficient of V
F
Reverse Current V
Junction capacitance V
= 100 mA, tp = 20 ms V
F
IF = 100 mA TK
= 5 V I
R
= 0 V, f = 1 MHz, E = 0 C
R
F
VF
R
j
1.5 1.8 V
- 1.6 mV/K
100 µA
20 pF
Optical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Typ . Max Unit
Temp. Coefficient of φ
e
IF = 20 mA TKφ
e
Angle of Half Intensity ϕ ± 12 deg
Peak Wavelength I
Spectral Bandwidth I
Temp. Coefficient of λ
p
Rise Time I
Fall Time I
= 100 mA λ
F
= 100 mA ∆λ 80 nm
F
IF = 100 mA TKλ
= 100 mA t
F
= 1.5 A t
I
F
= 100 mA t
F
= 1.5 A t
I
F
p
p
r
r
f
f
Virtual Source Diameter ∅ 3.7 mm
- 0.7 %/K
875 nm
0.2 nm/K
600 ns
300 ns
600 ns
300 ns
Type Dedicated Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Part Symbol Min Typ. Max Unit
Forward Voltage I
Radiant Intensity I
Radiant Power I
= 1.5 A, tp = 100 µs TSHA5200 V
F
= 100 mA, tp = 20 ms TSHA5200 I
F
= 1.5 A, tp = 100 µs TSHA5200 I
I
F
= 100 mA, tp = 20 ms TSHA5200 φ
F
TSHA5201 V
TSHA5202 V
TSHA5203 V
TSHA5201 I
TSHA5202 I
TSHA5203 I
TSHA5201 I
TSHA5202 I
TSHA5203 I
TSHA5201 φ
TSHA5202 φ
TSHA5203 φ
F
F
F
F
e
e
e
e
e
e
e
e
e
e
e
e
25 40 125 mW/sr
30 50 125 mW/sr
36 60 125 mW/sr
50 65 125 mW/sr
300 500 mW/sr
400 600 mW/sr
500 700 mW/sr
600 800 mW/sr
3.2 4.9 V
3.2 4.9 V
3.2 4.5 V
3.2 4.5 V
22 mW
23 mW
24 mW
25 mW
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Document Number 81019
Rev. 1.4, 11-May-04
VISHAY
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
4
250
10
TSHA520.
200
150
R
thJA
100
50
V
P - Power Dissipation ( mW )
0
20 40 60 80 1000
T
94 7957
- Ambient Temperature ( °C)
amb
Figure 1. Power Dissipation vs. Ambient Temperature
125
100
75
50
F
I – Forward Current ( mA)
25
0
020406080
T
94 8002 e
– Ambient Temperature( °C )
amb
100
tp= 100 µs
/T = 0.001
t
p
VF- Forward Voltage(V)
F
I - Forward Current ( mA )
94 8005
10
10
10
3
2
1
Figure 4. Forward Current vs. Forward Voltage
1.2
1.1
IF=10mA
1.0
0.9
0.8
Frel
V - Relative Forward Voltage
0.7
T
94 7990
- Ambient Temperature ( °C)
amb
43210
100806040200
Figure 2. Forward Current vs. Ambient Temperature
1
10
I
= 2.5 A ( Single Pulse )
FSM
tp/T= 0.01
0
10
0.05
0.1
0.2
F
I - Forward Current(A)
0.5
-1
94 8003
10
10
10
-1
-2
tp- Pulse Duration ( ms )
10
0
10
1
Figure 3. Pulse Forward Current vs. Pulse Duration
Document Number 81019
Rev. 1.4, 11-May-04
10
Figure 5. Relative Forward Voltage vs. Ambient Temperature
1000
TSHA 5203
TSHA 5202
100
TSHA 5201
10
e
I – Radiant Intensity ( mW/sr )
TSHA 5200
1
2
94 8006 e
10
0
10
1
10
2
IF– Forward Current ( mA )
10
3
10
4
Figure 6. Radiant Intensity vs. Forward Current
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