VISHAY
94 8390
TSHA520.
Vishay Semiconductors
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double
Hetero
Description
The TSHA520. series are high efficiency infrared
emitting diodes in GaAlAs on GaAlAs technology,
molded in a clear, untinted plastic package.
In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about
70 % radiant power improvement.
Features
• Extra high radiant power and radiant intensity
• Suitable for high pulse current operation
• Standard T-1¾ (∅ 5 mm) package
• Angle of half intensity ϕ = ± 12 °
• Peak wavelength λ
= 875 nm
p
• High reliability
• Good spectral matching to Si photodetectors
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Infrared remote control and free air transmission systems with high power and long transmission distance
requirements in combination with PIN photodiodes or
phototransistors.
Because of the reduced radiance absorption in glass
at the wavelength of 875 nm, this emitter series is also
suitable for systems with panes in the transmission
range between emitter and detector.
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Reverse Voltage V
Forward current I
Peak Forward Current t
Surge Forward Current t
Power Dissipation P
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature t ≤ 5 sec, 2 mm from case T
Thermal Resistance Junction/
Ambient
/T = 0.5, tp = 100 µsIFM200 mA
p
= 100 µsI
p
R
F
FSM
amb
stg
sd
thJA
R
V
j
5V
100 mA
2.5 A
210 mW
100 °C
- 55 to + 100 °C
- 55 to + 100 °C
260 °C
350 K/W
Document Number 81019
Rev. 1.4, 11-May-04
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1
TSHA520.
VISHAY
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Typ . Max Unit
Forward Voltage I
Temp. Coefficient of V
F
Reverse Current V
Junction capacitance V
= 100 mA, tp = 20 ms V
F
IF = 100 mA TK
= 5 V I
R
= 0 V, f = 1 MHz, E = 0 C
R
F
VF
R
j
1.5 1.8 V
- 1.6 mV/K
100 µA
20 pF
Optical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Typ . Max Unit
Temp. Coefficient of φ
e
IF = 20 mA TKφ
e
Angle of Half Intensity ϕ ± 12 deg
Peak Wavelength I
Spectral Bandwidth I
Temp. Coefficient of λ
p
Rise Time I
Fall Time I
= 100 mA λ
F
= 100 mA ∆λ 80 nm
F
IF = 100 mA TKλ
= 100 mA t
F
= 1.5 A t
I
F
= 100 mA t
F
= 1.5 A t
I
F
p
p
r
r
f
f
Virtual Source Diameter ∅ 3.7 mm
- 0.7 %/K
875 nm
0.2 nm/K
600 ns
300 ns
600 ns
300 ns
Type Dedicated Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Part Symbol Min Typ. Max Unit
Forward Voltage I
Radiant Intensity I
Radiant Power I
= 1.5 A, tp = 100 µs TSHA5200 V
F
= 100 mA, tp = 20 ms TSHA5200 I
F
= 1.5 A, tp = 100 µs TSHA5200 I
I
F
= 100 mA, tp = 20 ms TSHA5200 φ
F
TSHA5201 V
TSHA5202 V
TSHA5203 V
TSHA5201 I
TSHA5202 I
TSHA5203 I
TSHA5201 I
TSHA5202 I
TSHA5203 I
TSHA5201 φ
TSHA5202 φ
TSHA5203 φ
F
F
F
F
e
e
e
e
e
e
e
e
e
e
e
e
25 40 125 mW/sr
30 50 125 mW/sr
36 60 125 mW/sr
50 65 125 mW/sr
300 500 mW/sr
400 600 mW/sr
500 700 mW/sr
600 800 mW/sr
3.2 4.9 V
3.2 4.9 V
3.2 4.5 V
3.2 4.5 V
22 mW
23 mW
24 mW
25 mW
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Document Number 81019
Rev. 1.4, 11-May-04
VISHAY
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
4
250
10
TSHA520.
200
150
R
thJA
100
50
V
P - Power Dissipation ( mW )
0
20 40 60 80 1000
T
94 7957
- Ambient Temperature ( °C)
amb
Figure 1. Power Dissipation vs. Ambient Temperature
125
100
75
50
F
I – Forward Current ( mA)
25
0
020406080
T
94 8002 e
– Ambient Temperature( °C )
amb
100
tp= 100 µs
/T = 0.001
t
p
VF- Forward Voltage(V)
F
I - Forward Current ( mA )
94 8005
10
10
10
3
2
1
Figure 4. Forward Current vs. Forward Voltage
1.2
1.1
IF=10mA
1.0
0.9
0.8
Frel
V - Relative Forward Voltage
0.7
T
94 7990
- Ambient Temperature ( °C)
amb
43210
100806040200
Figure 2. Forward Current vs. Ambient Temperature
1
10
I
= 2.5 A ( Single Pulse )
FSM
tp/T= 0.01
0
10
0.05
0.1
0.2
F
I - Forward Current(A)
0.5
-1
94 8003
10
10
10
-1
-2
tp- Pulse Duration ( ms )
10
0
10
1
Figure 3. Pulse Forward Current vs. Pulse Duration
Document Number 81019
Rev. 1.4, 11-May-04
10
Figure 5. Relative Forward Voltage vs. Ambient Temperature
1000
TSHA 5203
TSHA 5202
100
TSHA 5201
10
e
I – Radiant Intensity ( mW/sr )
TSHA 5200
1
2
94 8006 e
10
0
10
1
10
2
IF– Forward Current ( mA )
10
3
10
4
Figure 6. Radiant Intensity vs. Forward Current
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TSHA520.
Vishay Semiconductors
1000
VISHAY
0°
10°20
°
30°
100
10
- Radiant Power ( mW )
1
e
Φ
0.1
94 8007
10
10
1
0
IF- Forward Current ( mA )
10
2
10
Figure 7. Radiant Power vs. Forward Current
1.6
1.2
IF=20mA
Φ
0.8
e rel e rel
I;
0.4
1.0
40°
0.9
0.8
e rel
0.7
I – Relative Radiant Intensity
0.4 0.2 0 0.2 0.4
3
10
4
94 8008 e
0.6
50°
60°
70°
80°
0.6
Figure 10. Relative Radiant Intensity vs. Angular Displacement
0
-10 10 500 100
T
94 8020
- Ambient Temperature ( °C)
amb
140
Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature
1.25
1.0
0.75
0.5
- Relative Radiant Power
e
0.25
Φ
0
780 880
94 8000
IF= 100 mA
)/λ()
=
(
λ
ΦΦ
ee
rel
λ - Wavelength ( nm )
()
λ
Φ
pe
980
Figure 9. Relative Radiant Power vs. Wavelength
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Document Number 81019
Rev. 1.4, 11-May-04
VISHAY
Package Dimensions in mm
TSHA520.
Vishay Semiconductors
9612121
Document Number 81019
Rev. 1.4, 11-May-04
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TSHA520.
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 81019
Rev. 1.4, 11-May-04
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
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for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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